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18 May 2009

Volume 94, Issue 20, Articles (20xxxx)

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Appl. Phys. Lett. 94, 203301 (2009); http://dx.doi.org/10.1063/1.3133902 (3 pages)

Zihong Liu, Joon Hak Oh, Mark E. Roberts, Peng Wei, Bipul C. Paul, Masaki Okajima, Yoshio Nishi, and Zhenan Bao
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Controlling the carrier recombination zone for improved color stability in a two-dopant fluorophore/phosphor white organic light-emitting diode

Unnat S. Bhansali, Huiping Jia, M. A. Quevedo Lopez, Bruce E. Gnade, Wei-Hsuan Chen, and Mohammad A. Omary

Appl. Phys. Lett. 94, 203501 (2009); http://dx.doi.org/10.1063/1.3089867 (3 pages) | Cited 16 times

Online Publication Date: 18 May 2009

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A white organic light-emitting diode (WOLED) is produced upon systematic introduction of deep-blue fluorescence from 4,4′-bis(9-ethyl-3-carbazovinylene)-1,1′-biphenyl to broad-band yellow phosphorescence from bis[3,5-bis(2-pyridyl)-1,2,4-triazolato]platinum(II) in the common host 4,4′-bis(carbazol-9-yl)biphenyl. The carrier recombination zone is first identified upon investigating alternative device structures, then optimized by varying the thickness of the electron-transport layer. The WOLED exhibits striking stability of color and efficiency, as manifest by parameters at high brightness of 1000 cd/m2 sustaining 94%–122% their values at 50 cd/m2.
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85.60.Jb Light-emitting devices

Effect of annealing on the performance of CrO3/ZnO light emitting diodes

Y. Y. Xi, A. M. C. Ng, Y. F. Hsu, A. B. Djurišić, B. Q. Huang, L. Ge, X. Y. Chen, W. K. Chan, H. L. Tam, and K. W. Cheah

Appl. Phys. Lett. 94, 203502 (2009); http://dx.doi.org/10.1063/1.3140962 (3 pages) | Cited 5 times

Online Publication Date: 20 May 2009

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Heterojunction CrO3/ZnO light emitting diodes have been fabricated. Their performance was investigated for different annealing temperature for ZnO nanorods. Annealing in oxygen atmosphere had significant influence on carrier concentration in the nanorods, as well as on the emission spectra of the nanorods. Surprisingly, annealing conditions, which yield the lowest band edge-to-defect emission ratio in the photoluminescence spectra, result in the highest band edge-to-defect emission ratio in the electroluminescence spectra. The influence of the native defects on ZnO light emitting diode performance is discussed.
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85.60.Jb Light-emitting devices
61.72.Cc Kinetics of defect formation and annealing
78.55.-m Photoluminescence, properties and materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
73.61.-r Electrical properties of specific thin films
72.20.Fr Low-field transport and mobility; piezoresistance
78.60.Fi Electroluminescence
71.55.Gs II-VI semiconductors

Thermopower-enhanced efficiency of Si/SiGe ballistic rectifiers

D. Salloch, U. Wieser, U. Kunze, and T. Hackbarth

Appl. Phys. Lett. 94, 203503 (2009); http://dx.doi.org/10.1063/1.3140439 (3 pages) | Cited 2 times

Online Publication Date: 21 May 2009

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Injection-type ballistic rectifiers on Si/SiGe are studied with respect to the influence of gate voltage on the transfer resistance RT (output voltage divided by input current) for different positions of a local gate electrode. The rectifiers are trifurcated quantum wires with straight voltage stem and oblique current-injecting leads. Depending on the gate configuration, thermopower contributions arise from nearly pinched stem regions, which either cancel each other or impose upon the ballistic signal with same or opposite polarity. At best, this enhances RT to a maximum value of 470 Ω close to threshold voltage.
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73.63.Nm Quantum wires
73.40.Ei Rectification
73.23.Ad Ballistic transport
72.20.Pa Thermoelectric and thermomagnetic effects
72.20.Ht High-field and nonlinear effects
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