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18 May 2009

Volume 94, Issue 20, Articles (20xxxx)

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Appl. Phys. Lett. 94, 203301 (2009); http://dx.doi.org/10.1063/1.3133902 (3 pages)

Zihong Liu, Joon Hak Oh, Mark E. Roberts, Peng Wei, Bipul C. Paul, Masaki Okajima, Yoshio Nishi, and Zhenan Bao
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Growth-rate induced epitaxial orientation of CeO2 on Al2O3(0001)

Satyanarayana V. N. T. Kuchibhatla, P. Nachimuthu, F. Gao, W. Jiang, V. Shutthanandan, M. H. Engelhard, S. Seal, and S. Thevuthasan

Appl. Phys. Lett. 94, 204101 (2009); http://dx.doi.org/10.1063/1.3139073 (3 pages) | Cited 6 times

Online Publication Date: 19 May 2009

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High-quality CeO2 films were grown on Al2O3(0001) substrates using oxygen plasma-assisted molecular beam epitaxy. The epitaxial orientation of the films is found to be CeO2(100) and CeO2(111) at low (<8 Å/min) and higher growth rates (>12 Å/min), respectively. CeO2(100) film grows as three-dimensional islands, while CeO2(111) film grows as two-dimensional layers. The CeO2(100) film exhibits better epitaxial quality compared to CeO2(111) film. However, the CeO2(100) film on Al2O3(0001) shows three in-plane domains at 30° to each other. While the epitaxial quality is attributed to the close match between oxygen sublattices of CeO2(100) and Al2O3(0001), the three in-plane domains in CeO2(100) are attributed to the threefold symmetry of the substrate. The relative stability of different epitaxial orientations of CeO2 films on Al2O3(0001) obtained from molecular dynamics simulations strongly supports the experimental observations.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.A- Nucleation and growth
81.15.Jj Ion and electron beam-assisted deposition; ion plating
52.77.Dq Plasma-based ion implantation and deposition

Fundamental mechanisms of oxygen plasma-induced damage of ultralow-k organosilicate materials: The role of thermal 3P atomic oxygen

Mrunalkumar Chaudhari, Jincheng Du, Swayambhu Behera, Sudha Manandhar, Sneha Gaddam, and Jeffry Kelber

Appl. Phys. Lett. 94, 204102 (2009); http://dx.doi.org/10.1063/1.3134487 (3 pages) | Cited 18 times

Online Publication Date: 20 May 2009

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Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS), and ab initio density functional theory-based molecular dynamics simulations demonstrate fundamental mechanisms for CH3 abstraction from organosilicate films by thermal O(3P). Ex situ FTIR analysis demonstrates that film exposure to thermal O(3P) yields chemical changes similar to O2 plasma exposure. In situ XPS indicates that exposure to thermal O(3P) yields O/OH incorporation in the organosilicate film concurrent with carbon loss from the surface region. These results are consistent with simulations indicating specific low kinetic barrier (<0.1 eV) reactions resulting in concurrent Si–C bond scission and Si–O bond formation.
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82.30.Hk Chemical exchanges (substitution, atom transfer, abstraction, disproportionation, and group exchange)
82.80.Dx Analytical methods involving electronic spectroscopy
77.55.-g Dielectric thin films
82.20.-w Chemical kinetics and dynamics

Synergy on catalytic effect of Fe–Zr additives mixed in different proportions on the hydrogen desorption from MgH2

A. Kale, N. Bazzanella, R. Checchetto, and A. Miotello

Appl. Phys. Lett. 94, 204103 (2009); http://dx.doi.org/10.1063/1.3141453 (3 pages) | Cited 3 times

Online Publication Date: 20 May 2009

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Mg films with mixed Fe and Zr metallic additives were prepared by rf magnetron sputtering keeping the total metal content constant, about 7 at. %, and changing the [Fe]/[Zr] ratio. Isothermal hydrogen desorption curves showed that the kinetics depends on [Fe]/[Zr] ratio and is fastest when the [Fe]/[Zr] ratio is ∼ 1.8. X-ray diffraction analysis revealed formation of Fe nanoclusters and Mg grain refinement. The improvement of the hydrogen desorption kinetics can be explained by the presence of atomically dispersed Zr and Fe nanoclusters acting as nucleation centers, as well as Mg grain refinement.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.43.Nr Desorption kinetics
81.15.Cd Deposition by sputtering
68.55.at Other materials

A microscale multi-inlet vortex nanoprecipitation reactor: Turbulence measurement and simulation

Janine Chungyin Cheng, Michael G. Olsen, and Rodney O. Fox

Appl. Phys. Lett. 94, 204104 (2009); http://dx.doi.org/10.1063/1.3125428 (3 pages) | Cited 9 times

Online Publication Date: 21 May 2009

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Microscale reactors capable of generating turbulent flow are used in Flash NanoPrecipitation, an approach to produce functional nanoparticles with unique optical, mechanical and chemical properties. Microreactor design and optimization could be greatly enhanced by developing reliable computational models of the nanoprecipitation process. A microscale multi-inlet vortex nanoprecipitation reactor was investigated using microscopic particle image velocimetry and computational fluid dynamics. Velocity data such as the mean velocity and turbulent kinetic energy displayed good agreement between experiment and simulation over flow conditions ranging from fully laminar to turbulent, demonstrating the accuracy of the simulation model over the entire turbulent transition range.
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47.32.-y Vortex dynamics; rotating fluids
47.11.-j Computational methods in fluid dynamics
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