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18 May 2009

Volume 94, Issue 20, Articles (20xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 94, 203301 (2009); http://dx.doi.org/10.1063/1.3133902 (3 pages)

Zihong Liu, Joon Hak Oh, Mark E. Roberts, Peng Wei, Bipul C. Paul, Masaki Okajima, Yoshio Nishi, and Zhenan Bao
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Infrared laser-based monitoring of the silane dissociation during deposition of silicon thin films

R. Bartlome, A. Feltrin, and C. Ballif

Appl. Phys. Lett. 94, 201501 (2009); http://dx.doi.org/10.1063/1.3141520 (3 pages) | Cited 7 times

Online Publication Date: 21 May 2009

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The silane dissociation efficiency, or depletion fraction, is an important plasma parameter by means of which the film growth rate and the amorphous-to-microcrystalline silicon transition regime can be monitored in situ. In this letter we implement a homebuilt quantum cascade laser-based absorption spectrometer to measure the silane dissociation efficiency in an industrial plasma-enhanced chemical vapor deposition system. This infrared laser-based diagnostic technique is compact, sensitive, and nonintrusive. Its resolution is good enough to resolve Doppler-broadened rotovibrational absorption lines of silane. The latter feature various absorption strengths, thereby enabling depletion measurements over a wide range of process conditions.
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81.05.Cy Elemental semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.ag Semiconductors
52.77.Dq Plasma-based ion implantation and deposition
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
82.80.Gk Analytical methods involving vibrational spectroscopy
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