APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

18 May 2009

Volume 94, Issue 20, Articles (20xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 94, 203301 (2009); http://dx.doi.org/10.1063/1.3133902 (3 pages)

Zihong Liu, Joon Hak Oh, Mark E. Roberts, Peng Wei, Bipul C. Paul, Masaki Okajima, Yoshio Nishi, and Zhenan Bao
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Water structures near charged (100) and (111) silicon surfaces

Dongyan Xu, Yongsheng Leng, Yunfei Chen, and Deyu Li

Appl. Phys. Lett. 94, 201901 (2009); http://dx.doi.org/10.1063/1.3139745 (3 pages) | Cited 1 time

Online Publication Date: 19 May 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Molecular dynamics simulations show that the layering structure of water molecules near solid surfaces can be significantly altered by surface charges. The first layer of water near the (100) silicon surface can be split into two layers as the surface charge density increases to −0.1 C/m2 because of the much more aligned distribution of water molecules. However, this splitting is not observed for the (111) silicon surface due to the higher surface atom density, which prevents water molecules from getting very close to the surface.
Show PACS
61.25.Em Molecular liquids
61.20.Ja Computer simulation of liquid structure
82.45.-h Electrochemistry and electrophoresis

Residual stress analysis in chemical-vapor-deposition diamond films

T. Liu, H. Pinto, P. Brito, L. A. Sales, and D. Raabe

Appl. Phys. Lett. 94, 201902 (2009); http://dx.doi.org/10.1063/1.3139083 (3 pages)

Online Publication Date: 20 May 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Three groups of diamond films were deposited with variations in methane concentration, substrate material, and film thickness by a direct current chemical-vapor-deposition method. Stresses were measured by x-ray diffraction. The material reveals compressive stresses at the substrate interfaces due to thermal expansion mismatch. Increasing influence of defects leads to a drop in the compressive stresses and the formation of tensile stresses toward the growth front.
Show PACS
68.60.Bs Mechanical and acoustical properties
61.72.Mm Grain and twin boundaries
68.55.aj Insulators
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
65.40.De Thermal expansion; thermomechanical effects
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep

Long-lived blue phosphorescence of oxidized and annealed nanocrystalline silicon

Bernard Gelloz and Nobuyoshi Koshida

Appl. Phys. Lett. 94, 201903 (2009); http://dx.doi.org/10.1063/1.3140570 (3 pages) | Cited 5 times

Online Publication Date: 20 May 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
It is shown that an appropriate combination of thermal oxidation and high-pressure water vapor annealing for nanosilicon leads to efficient blue-band phosphorescence with a lifetime of several seconds. Based on spectroscopic analyses on both the temperature dependence of decay dynamics and the change in the peak wavelength with the excitation energy, the phosphorescence is related to luminescence centers in nanosilicon network embedded within high-quality oxide. By controlled oxidation, slow blue transitions via triplets are revealed in nanosilicon separately from the conventional fast band.
Show PACS
78.55.Ap Elemental semiconductors
81.05.Cy Elemental semiconductors
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.40.Gh Other heat and thermomechanical treatments
61.72.jn Color centers
82.30.-b Specific chemical reactions; reaction mechanisms
62.50.-p High-pressure effects in solids and liquids

The 3C-6H polytypic transition in SiC as revealed by diffuse x-ray scattering

A. Boulle, J. Aube, I. G. Galben-Sandulache, and D. Chaussende

Appl. Phys. Lett. 94, 201904 (2009); http://dx.doi.org/10.1063/1.3141509 (3 pages) | Cited 5 times

Online Publication Date: 22 May 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The 3C-6H polytypic transition in SiC single crystals is studied by means of diffuse x-ray scattering. Based on numerical simulations of the diffuse scattering intensity distribution we unambiguously prove that the 3C-6H transition in SiC occurs through the glide of partial dislocations and not by the “layer displacement” mechanism (i.e., local diffusional rearrangement of the Si and C atoms). The technique is extremely sensitive and can be used as a nondestructive mean to obtain statistically relevant values of the transition level down to ∼ 0.05%.
Show PACS
78.70.Ck X-ray scattering
61.72.Dd Experimental determination of defects by diffraction and scattering
61.50.Ks Crystallographic aspects of phase transformations; pressure effects
61.72.Nn Stacking faults and other planar or extended defects

Nucleation thermodynamics of oxide during metal oxidation

Guangwen Zhou

Appl. Phys. Lett. 94, 201905 (2009); http://dx.doi.org/10.1063/1.3141511 (3 pages) | Cited 4 times

Online Publication Date: 22 May 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The classical theory of nucleation has been extended to describe oxide nucleation during the oxidation of metals. It is found that the localized reaction of oxygen with an underlying metal substrate exerts a very strong influence on the free energy barrier of three-dimensional oxide nucleation, which can be characterized by an interfacial correlation function. Our results show that the nucleation barrier increases with the steepening of the contact angle between the nucleating phase and the substrate. This model is expected to find applicability in other reaction-induced heterogeneous nucleation systems.
Show PACS
82.60.Nh Thermodynamics of nucleation
65.40.G- Other thermodynamical quantities
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.30.-b Specific chemical reactions; reaction mechanisms
82.20.Nk Classical theories of reactions and/or energy transfer

Dynamics in Cu46Zr42Al7Y5 melts: Interplay between packing density and viscosity

S. M. Chathoth, B. Damaschke, J. P. Embs, and K. Samwer

Appl. Phys. Lett. 94, 201906 (2009); http://dx.doi.org/10.1063/1.3142389 (3 pages) | Cited 1 time

Online Publication Date: 22 May 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have investigated microscopic dynamics in the bulk glass-forming Cu46Zr42Al7Y5 melts using quasielastic neutron scattering (QENS). Self-correlation functions show a fast β and a slow α-relaxation process. α relaxation exhibits stretching and is independent of momentum transfer and temperature. The melt is characterized by low packing density and high viscosity. The dynamics observed and the critical packing density derived from the QENS data are in good agreement with mode-coupling theory predictions for hard-sphere liquids. However, we can show that viscosity dominates over packing density in determining the atomic dynamics and glass-forming ability of the metallic melt.
Show PACS
66.20.-d Viscosity of liquids; diffusive momentum transport
64.70.pe Metallic glasses

p-GaN/InGaN/n-GaN pedestal nanorods: Effect of postgrowth annealing on the electrical performance

H. W. Seo, L. W. Tu, Y. T. Lin, C. Y. Ho, Q. Y. Chen, L. Yuan, D. P. Norman, and N. J. Ho

Appl. Phys. Lett. 94, 201907 (2009); http://dx.doi.org/10.1063/1.3129191 (3 pages) | Cited 1 time

Online Publication Date: 22 May 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Pedestal p-GaN/InGaN/n-GaN nanorods have been fabricated on n-type Si (111) substrates by properly reducing the growth temperature of the p-GaN surface layer. Continuous p-GaN layers were formed on the top region by accelerated lateral growth, while keeping the underlying nanostructures and physical properties of InGaN and n-GaN intact, making it feasible for large-scale vertical integration. Growth of the p-GaN layer at 500 °C followed by annealing at 600–800 °C improved crystal structures and the overall electrical and luminescence properties of pedestal nanorods.
Show PACS
81.16.-c Methods of micro- and nanofabrication and processing
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
73.63.-b Electronic transport in nanoscale materials and structures
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
61.72.Cc Kinetics of defect formation and annealing
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close