APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

25 May 2009

Volume 94, Issue 21, Articles (21xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 94, 213101 (2009); http://dx.doi.org/10.1063/1.3139865 (3 pages)

Chul-Ho Lee, Jinkyoung Yoo, Young Joon Hong, Jeonghui Cho, Yong-Jin Kim, Seong-Ran Jeon, Jong Hyeob Baek, and Gyu-Chul Yi
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Possible incipient ferroelectricity in Mn-doped Na1/2Bi1/2Cu3Ti4O12

Matthew C. Ferrarelli, Derek C. Sinclair, and Anthony R. West

Appl. Phys. Lett. 94, 212901 (2009); http://dx.doi.org/10.1063/1.3134488 (3 pages) | Cited 8 times

Online Publication Date: 26 May 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The grain semiconductivity of Na1/2Bi1/2Cu3Ti4O12 ceramics is suppressed by several orders of magnitude by Mn-doping and Na1/2Bi1/2Cu2.82Mn0.18Ti4O12 ceramics exhibit high room temperature relative permittivity, εr, ∼ 140. εr data at 100 kHz fit the Barrett equation over the range ∼ 10–320 K and the magnitude and temperature dependence of εr are consistent with incipient ferroelectricity in this compound.
Show PACS
61.72.up Other materials
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
81.05.Hd Other semiconductors
77.22.Ch Permittivity (dielectric function)

Band alignment of atomic layer deposited (ZrO2)x(SiO2)1−x gate dielectrics on Si (100)

Dahlang Tahir, Eun Kyoung Lee, Suhk Kun Oh, Tran Thi Tham, Hee Jae Kang, Hua Jin, Sung Heo, Ju Chul Park, Jae Gwan Chung, and Jae Cheol Lee

Appl. Phys. Lett. 94, 212902 (2009); http://dx.doi.org/10.1063/1.3143223 (3 pages) | Cited 10 times

Online Publication Date: 27 May 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The band alignment for atomic layer deposited (ZrO2)x(SiO2)1−x (x = 1.0, 0.75, 0.5, 0.25) gate dielectric thin films grown on Si (100) was obtained by using x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, conduction band offset, and the valence band offset for ZrO2 thin film were 5.30, 1.83, and 2.35 eV, respectively. These values for Zr silicates with x more than 0.5 are independent of SiO2 concentration but both holes and electrons have more symmetric barrier heights when x = 0.25. The Zr silicate dielectrics are strongly affected by Zr–O nearest neighbor bonding.
Show PACS
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
68.55.aj Insulators
71.20.Ps Other inorganic compounds
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
79.60.Dp Adsorbed layers and thin films

Positive temperature coefficient of resistivity and negative differential resistivity in lead iron tunstate-lead zirconate titate

Ashok Kumar, Ram S. Katiyar, and J. F. Scott

Appl. Phys. Lett. 94, 212903 (2009); http://dx.doi.org/10.1063/1.3138781 (3 pages) | Cited 6 times

Online Publication Date: 27 May 2009

Full Text: Read Online (HTML) | Download PDF


See Also: Erratum

Show Abstract
A tetragonal crystal of formula (PbFe0.67W0.33O3)0.2(PbZr0.53Ti0.47O3)0.8 (“PFW/PZT”) was recently found to exhibit ferroelectric switching via magnetic fields of H = 0.5 T at room temperature [ Kumar et al., arXiv:0812.3875v2 ]. In the present study we found that this material exhibits two other unusual properties: a positive temperature coefficient of resistivity (PTCR) and negative differential resistivity. These phenomena are often considered to be unrelated and PTCR usually results from grain boundary effects, but can be bulk [ D. C. Sinclair and A. R. West, J. Appl. Phys. 66, 3850 (1989) ]. Within the diffusion theory of Dawber and Scott [J. Phys. Condens. Mater. 16, L515 (2004) ] they are necessarily related and we fitted the present data to their diffusion-limited model.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Fm Switching phenomena
61.72.Mm Grain and twin boundaries
66.30.-h Diffusion in solids

Gigantic magnetoelectric effect caused by magnetic-field-induced canted antiferromagnetic-paramagnetic transition in quasi-two-dimensional Ca2CoSi2O7 crystal

M. Akaki, J. Tozawa, D. Akahoshi, and H. Kuwahara

Appl. Phys. Lett. 94, 212904 (2009); http://dx.doi.org/10.1063/1.3147195 (3 pages) | Cited 5 times

Online Publication Date: 28 May 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have investigated the magnetic and dielectric properties of Ca2CoSi2O7 crystal. The dielectricity and magnetism of Ca2CoSi2O7 are strongly coupled below a canted antiferromagnetic transition temperature (TN). Magnetic fields induce electric polarization below TN. Interestingly, the magnetic-field-induced electric polarization is detected even without poling electric fields. Below TN, a canted antiferromagnetic-paramagnetic transition is induced by magnetic fields. The large magnetocapacitance is observed around TN. The origin of the large magnetocapacitance is due to the magnetic-field-induced the canted antiferromagnetic-paramagnetic transition.
Show PACS
75.80.+q Magnetomechanical effects, magnetostriction
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.22.Ej Polarization and depolarization

The influence of point defects and inhomogeneous strain on the functional behavior of thin film ferroelectrics

L. W. Chang, M. McMillen, and J. M. Gregg

Appl. Phys. Lett. 94, 212905 (2009); http://dx.doi.org/10.1063/1.3132583 (3 pages) | Cited 7 times

Online Publication Date: 28 May 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
An attempt has been made to unequivocally identify the influence that inhomogeneous strain fields, surrounding point defects, have on the functional properties of thin film ferroelectrics. Single crystal thin film lamellae of BaTiO3 have been integrated into capacitor structures, and the functional differences between those annealed in oxygen and those annealed in nitrogen have been mapped. Key features, such as the change in the paraelectric-ferroelectric phase transition from first to second order were noted and found to be consistent with mean field modeling predictions for the effects of inhomogeneous strain. Switching characteristics appeared to be unaffected, suggesting that point defects have a low efficacy in domain wall pinning.
Show PACS
77.55.-g Dielectric thin films
77.80.B- Phase transitions and Curie point
77.80.Fm Switching phenomena
77.80.Dj Domain structure; hysteresis
81.40.Gh Other heat and thermomechanical treatments
61.72.J- Point defects and defect clusters

Separation of piezoelectric grain resonance and domain wall dispersion in Pb(Zr,Ti)O3 ceramics

V. Porokhonskyy, Li Jin (靳立), and D. Damjanovic

Appl. Phys. Lett. 94, 212906 (2009); http://dx.doi.org/10.1063/1.3147166 (3 pages) | Cited 7 times

Online Publication Date: 29 May 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on the experimental investigation of a high-frequency (1 MHz–1.8 GHz) dielectric dispersion in unpoled and poled Pb(Zr,Ti)O3 ceramics. Two overlapping loss peaks could be revealed in the dielectric spectrum. The linear dependence between the lower-frequency peak position and average grain size math, which holds for math ≤ 10 μm, indicates that the corresponding polarization mechanism originates from piezoelectric resonances of grains. The intensity of the higher-frequency peak is drastically reduced by poling. It is thus proposed that this loss peak is related to domain wall contribution to the dielectric dispersion.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
72.30.+q High-frequency effects; plasma effects
77.22.Gm Dielectric loss and relaxation

Capacitance-voltage and retention characteristics of Pt/SrBi2Ta2O9/HfO2/Si structures with various buffer layer thickness

M. H. Tang, Z. H. Sun, Y. C. Zhou, Y. Sugiyama, and H. Ishiwara

Appl. Phys. Lett. 94, 212907 (2009); http://dx.doi.org/10.1063/1.3147859 (3 pages) | Cited 9 times

Online Publication Date: 29 May 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The metal-ferroelectric-insulator-semiconductor (MFIS) structure diodes with SrBi2Ta2O9 (SBT) as ferroelectric thin film and HfO2 as insulating buffer layer were fabricated. The electrical properties of MFIS structure were investigated for different HfO2 buffer layer thickness. The experimental results show that the memory window extended significantly as the HfO2 layer thickness increased from 6 to 10 nm. It is also observed that the leakage current was reduced to about 10−10 A at applied voltage of 4 V, and the high and low capacitances remained distinguishable for over 8 h even if we extrapolate the measured data to 10 years.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Kk Junction diodes
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close