APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

25 May 2009

Volume 94, Issue 21, Articles (21xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 94, 213101 (2009); http://dx.doi.org/10.1063/1.3139865 (3 pages)

Chul-Ho Lee, Jinkyoung Yoo, Young Joon Hong, Jeonghui Cho, Yong-Jin Kim, Seong-Ran Jeon, Jong Hyeob Baek, and Gyu-Chul Yi
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Spray deposited molybdenum doped indium oxide thin films with high near infrared transparency and carrier mobility

S. Parthiban, K. Ramamurthi, E. Elangovan, R. Martins, and E. Fortunato

Appl. Phys. Lett. 94, 212101 (2009); http://dx.doi.org/10.1063/1.3142424 (3 pages) | Cited 9 times

Online Publication Date: 27 May 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Molybdenum doped (0–1 at. %) indium oxide thin films with high near infrared (NIR) transparency and carrier mobility were deposited on Corning-1737 glass substrates at 400 °C by spray pyrolysis experimental technique. Films with mobility as high as ∼ 149 cm2/V s were obtained when annealed in vacuum at 550 °C, which also possess carrier concentration of ∼ 1×1020 cm−3 and resistivity as low as ∼ 4.0×10−4 Ω cm. Further, both the average visible transmittance (500–800 nm) and the average NIR transmittance are >83%. This clearly shows that the transmittance is extended well into the NIR region.
Show PACS
78.66.Li Other semiconductors
73.61.Le Other inorganic semiconductors
78.30.Hv Other nonmetallic inorganics
72.20.Fr Low-field transport and mobility; piezoresistance

Resistance switching at the Al/SrTiO3−xNy anode interface

A. Shkabko, M. H. Aguirre, I. Marozau, T. Lippert, and A. Weidenkaff

Appl. Phys. Lett. 94, 212102 (2009); http://dx.doi.org/10.1063/1.3139761 (3 pages) | Cited 6 times

Online Publication Date: 27 May 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The electroformation and resistance switching behavior of Al/SrTiO3−xNy/Al have been investigated. The resistance of Al/SrTiO3−xNy/Al irreversibly increases when voltages higher than a certain threshold voltage are applied. A bistable resistance switching develops at one of the Al electrodes that performs as the anode. The formation of stacking faults in SrTiO3−xNy during preparation by microwave plasma treatment is a prerequisite for the occurrence of switching as confirmed by site-specific high resolution transmission electron microscopy at the electrode interfaces. The resistance switching effect is discussed by considering the role of stacking fault defects in the oxygen/nitrogen diffusion at the anode metal-oxynitride interface.
Show PACS
73.40.Ns Metal-nonmetal contacts
52.77.-j Plasma applications
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

First-principles calculations of electron mobilities in silicon: Phonon and Coulomb scattering

O. D. Restrepo, K. Varga, and S. T. Pantelides

Appl. Phys. Lett. 94, 212103 (2009); http://dx.doi.org/10.1063/1.3147189 (3 pages) | Cited 6 times

Online Publication Date: 28 May 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Electron mobilities limited by phonon and ionized impurity scattering have traditionally been modeled by suppressing atomic-scale detail, relying on empirical deformation potentials and either effective-mass theory or bulk energy bands to describe electron velocities. Parameter fitting to experimental data is needed. As modern technologies require modeling of transport at the nanoscale and unprecedented materials are introduced, predictive parameter-free mobility modeling becomes necessary. Here we report the development of first-principles quantum-mechanical methods to calculate scattering rates and electronic mobilities limited by phonon and ionized-impurity scattering. We report results for n-doped silicon that are in good agreement with experiment.
Show PACS
72.20.Fr Low-field transport and mobility; piezoresistance
72.10.Fk Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
72.80.Cw Elemental semiconductors
71.20.Mq Elemental semiconductors
71.15.-m Methods of electronic structure calculations

Metal-oxide-semiconductor field-effect transistors on GaAs (111)A surface with atomic-layer-deposited Al2O3 as gate dielectrics

M. Xu, Y. Q. Wu, O. Koybasi, T. Shen, and P. D. Ye

Appl. Phys. Lett. 94, 212104 (2009); http://dx.doi.org/10.1063/1.3147218 (3 pages) | Cited 19 times

Online Publication Date: 28 May 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
GaAs inversion-mode metal-oxide-semiconductor field-effect transistors (MOSFETs) with atomic-layer-deposited Al2O3 as gate dielectrics are fabricated on (111)A and (100) surfaces. With the same channel length of 0.75 μm, the maximum drain current of 15 mA/mm on n-channel MOSFET is obtained on (111)A surface, in great contrast to only 1 μA/mm on (100) surface. For p-channel MOSFETs, maximum drain currents of 0.17 mA/mm and 0.8 mA/mm are obtained on (111)A and (100) surfaces, respectively. An empirical model is proposed to correlate the experimental observation with the existing III-V MOS theories.
Show PACS
85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Guided modes in graphene waveguides

Fan-Ming Zhang, Ying He, and Xi Chen

Appl. Phys. Lett. 94, 212105 (2009); http://dx.doi.org/10.1063/1.3143614 (3 pages) | Cited 15 times

Online Publication Date: 28 May 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
By analogy of optical waveguides, we investigate the guided modes in graphene waveguides, which is made of symmetric quantum well. The unique properties of the graphene waveguide are discussed based on the two different dispersion relations, which correspond to classical motion and Klein tunneling, respectively. It is shown that the third-order mode is absent in the classical motion, while the fundamental mode is absent in the Klein tunneling case. We hope these phenomena can lead to the potential applications in graphene-based quantum devices.
Show PACS
78.67.De Quantum wells
81.05.U- Carbon/carbon-based materials
81.07.St Quantum wells
61.48.De Structure of carbon nanotubes, boron nanotubes, and other related systems
42.82.Et Waveguides, couplers, and arrays

Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O

H.-J. Lee, E. Helgren, and F. Hellman

Appl. Phys. Lett. 94, 212106 (2009); http://dx.doi.org/10.1063/1.3147856 (3 pages) | Cited 5 times

Online Publication Date: 29 May 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Electric field-controlled ferromagnetism of (Zn,Co)O is demonstrated via anomalous Hall effect measurements. The electron carrier concentration in this material is 1.65×1020 cm−3 as measured via ordinary Hall effect at 4 K, and an anomalous Hall effect is observed up to 6 K, but with no hysteresis at any temperature. With positive electric gate field, the carrier concentration is increased by approximately 2%, resulting in a clear magnetic hysteresis at 4 K. The ability to reversibly induce/eliminate ferromagnetism by applied gate field alone, measured via the effect on the carriers, is a clear sign of carrier-induced ferromagnetism in this system.
Show PACS
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.50.Pp Magnetic semiconductors
73.61.Ga II-VI semiconductors
75.70.Ak Magnetic properties of monolayers and thin films
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Dd Nonmetallic ferromagnetic materials

Spin polarized tunneling magnetoresistance in the self-doped manganite La0.9MnO3

M. Patra, A. Roy, K. De, S. Majumdar, and S. Giri

Appl. Phys. Lett. 94, 212107 (2009); http://dx.doi.org/10.1063/1.3147873 (3 pages) | Cited 2 times

Online Publication Date: 29 May 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We observe the tunneling magnetoresistance (TMR) at low temperature (T) and low field attributed to the self-doping in polycrystalline La0.9MnO3. The occurrence of TMR is suggested due to the tunneling through the grain boundary (GB) region. Tunneling component of the magnetoresistance ascribed to the disordered magnetic GB region follows the Curie–Weiss-like T dependence. The nonlinear current-voltage curves at low T indicate that the inelastic tunneling via localized states involved with the GB effect is dominant where at low temperature the number of inelastic channels and the fraction of charge carriers entering in each inelastic channel change with temperature.
Show PACS
75.47.Lx Magnetic oxides
61.72.Mm Grain and twin boundaries
72.25.-b Spin polarized transport
61.72.up Other materials

Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes

Yu-Lin Wang, F. Ren, U. Zhang, Q. Sun, C. D. Yerino, T. S. Ko, Y. S. Cho, I. H. Lee, J. Han, and S. J. Pearton

Appl. Phys. Lett. 94, 212108 (2009); http://dx.doi.org/10.1063/1.3148369 (3 pages) | Cited 7 times

Online Publication Date: 29 May 2009

Full Text: Read Online (HTML) | Download PDF


See Also: Erratum

Show Abstract
Pt/GaN Schottky diodes fabricated on m-plane (N-polar) layers grown on sapphire exhibit much larger responses to dilute concentrations (4% in N2) of hydrogen at room temperature than comparable Ga-polar devices. This is consistent with previous density functional theory indicating a very high affinity of hydrogen for the N-face surface of GaN. The rectifying current-voltage characteristics of N-face diodes make a transition to more Ohmic-like behavior after hydrogen exposure, leading to very large ( ∼ 106) maximum percentage changes in current relative to Ga-face ( ∼ 10%) or AlGaN/GaN heterostructure diodes ( ∼ 170%). The strong affinity of the N face of GaN for hydrogen also leads to a slower recovery of these diodes when hydrogen is removed from the ambient.
Show PACS
85.30.Kk Junction diodes
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
73.40.Ei Rectification

Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors

Yong-Hua Li, Aron Walsh, Shiyou Chen, Wan-Jian Yin, Ji-Hui Yang, Jingbo Li, Juarez L. F. Da Silva, X. G. Gong, and Su-Huai Wei

Appl. Phys. Lett. 94, 212109 (2009); http://dx.doi.org/10.1063/1.3143626 (3 pages) | Cited 24 times

Online Publication Date: 29 May 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Using an all-electron band structure approach, we have systematically calculated the natural band offsets between all group IV, III-V, and II-VI semiconductor compounds, taking into account the deformation potential of the core states. This revised approach removes assumptions regarding the reference level volume deformation and offers a more reliable prediction of the “natural” unstrained offsets. Comparison is made to experimental work, where a noticeable improvement is found compared to previous methodologies.
Show PACS
71.20.Nr Semiconductor compounds
71.15.-m Methods of electronic structure calculations
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close