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25 May 2009

Volume 94, Issue 21, Articles (21xxxx)

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Appl. Phys. Lett. 94, 213101 (2009); http://dx.doi.org/10.1063/1.3139865 (3 pages)

Chul-Ho Lee, Jinkyoung Yoo, Young Joon Hong, Jeonghui Cho, Yong-Jin Kim, Seong-Ran Jeon, Jong Hyeob Baek, and Gyu-Chul Yi
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Aluminum doped zinc oxide for organic photovoltaics

G. B. Murdoch, S. Hinds, E. H. Sargent, S. W. Tsang, L. Mordoukhovski, and Z. H. Lu

Appl. Phys. Lett. 94, 213301 (2009); http://dx.doi.org/10.1063/1.3142423 (3 pages) | Cited 33 times

Online Publication Date: 29 May 2009

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Aluminum doped zinc oxide (AZO) was grown via magnetron sputtering as a low-cost alternative to indium tin oxide (ITO) for organic photovoltaics (OPVs). Postdeposition ozone treatment resulted in devices with lower series resistance, increased open-circuit voltage, and power conversion efficiency double that of devices fabricated on untreated AZO. Furthermore, cells fabricated using ozone treated AZO and standard ITO displayed comparable performance.
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81.05.Dz II-VI semiconductors
81.15.Cd Deposition by sputtering
68.55.ag Semiconductors
73.61.Ga II-VI semiconductors
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Dual luminescence from organic/inorganic hybrid p-n junction light-emitting diodes

Jong H. Na, M. Kitamura, M. Arita, and Y. Arakawa

Appl. Phys. Lett. 94, 213302 (2009); http://dx.doi.org/10.1063/1.3148635 (3 pages) | Cited 5 times

Online Publication Date: 29 May 2009

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We fabricated a hybrid p-n junction structure using n-type InGaN/GaN multiple quantum wells (MQWs) and p-type N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine (α-NPD). The hybrid structure shows a good current rectifying characteristic similar with conventional p-n junction diodes. Electroluminescence (EL) of the hybrid device exhibits two emission bands originated from InGaN/GaN MQWs, as well as α-NPD layer. The EL properties can be explained by either (or both) electron-hole charge transport between the components or (and) efficient energy transfer via Föster mechanism. The device characteristics could be applicable to various multicolor light-emitting diodes by constructing other organic/inorganic hybrid junctions.
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85.60.Jb Light-emitting devices
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.60.Fi Electroluminescence
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