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25 May 2009

Volume 94, Issue 21, Articles (21xxxx)

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Appl. Phys. Lett. 94, 213101 (2009); http://dx.doi.org/10.1063/1.3139865 (3 pages)

Chul-Ho Lee, Jinkyoung Yoo, Young Joon Hong, Jeonghui Cho, Yong-Jin Kim, Seong-Ran Jeon, Jong Hyeob Baek, and Gyu-Chul Yi
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Electromechanical stability of dielectric elastomer

Jinsong Leng, Liwu Liu, Yanju Liu, Kai Yu, and Shouhua Sun

Appl. Phys. Lett. 94, 211901 (2009); http://dx.doi.org/10.1063/1.3138153 (3 pages) | Cited 24 times

Online Publication Date: 26 May 2009

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Electromechanical instability may occur in dielectric elastomer films due to the coupling between mechanical forces and electric fields. According to Zhao and Suo [Appl. Phys. Lett. 91, 061921 (2007) ], free-energy in any form, which consists of elastic strain energy and electric energy, can be used to analyze the electromechanical stability of dielectric elastomer. By taking the permittivity as a variable depending on the deformation in a free energy function, a relationship is established among critical nominal electric field, critical real electric field, nominal stress, and principal stretch ratios. The accurate expressions of these parameters are presented for a special equal biaxial stretch case. All the results obtained by utilizing the single material constant neo-Hookean elastic strain energy model coincide with the conclusions by Zhao and Suo.
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81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
65.60.+a Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.
77.22.Ch Permittivity (dielectric function)
77.55.-g Dielectric thin films
77.84.Jd Polymers; organic compounds

Metamaterial with polarization and direction insensitive resonant transmission response mimicking electromagnetically induced transparency

N. Papasimakis, Y. H. Fu, V. A. Fedotov, S. L. Prosvirnin, D. P. Tsai, and N. I. Zheludev

Appl. Phys. Lett. 94, 211902 (2009); http://dx.doi.org/10.1063/1.3138868 (3 pages) | Cited 47 times

Online Publication Date: 26 May 2009

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We report on a planar metamaterial, the resonant transmission frequency of which does not depend on the polarization and angle of incidence of electromagnetic waves. The resonance results from the excitation of high-Q antisymmetric trapped current mode and shows sharp phase dispersion characteristic to Fano-type resonances of the electromagnetically induced transparency phenomenon.
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42.65.-k Nonlinear optics
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.66.Bz Metals and metallic alloys

Time-resolved photoluminescence spectroscopy of the initial oxidation stage of small silicon nanocrystals

K. Dohnalová, K. Kůsová, and I. Pelant

Appl. Phys. Lett. 94, 211903 (2009); http://dx.doi.org/10.1063/1.3141481 (3 pages) | Cited 11 times

Online Publication Date: 27 May 2009

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In this paper we study the influence of progressing oxidation on the photoluminescence spectra of small silicon nanocrystals (SiNCs). H-terminated SiNCs exhibit only a fast approximately nanosecond photoluminescence component at ∼ 525 nm, quenched and redshifted to ∼ 550 nm by progressing oxidation. At the same time a new approximately microsecond photoluminescence component appears, intensity of which progressively increases and its peak position redshifts continuously from 575 up to 660 nm. We interpret our observations in terms of the quasidirect core electron-hole pair recombination quenched by the ultrafast trapping into the oxygen-related surface/interface states, forming within the band gap due to oxidation.
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78.47.jd Time resolved luminescence
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
78.55.Ap Elemental semiconductors
81.05.Cy Elemental semiconductors
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.07.Bc Nanocrystalline materials
73.63.Bd Nanocrystalline materials
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Reversible thermal interfaces based on microscale dielectric liquid layers

Gilhwan Cha and Y. Sungtaek Ju

Appl. Phys. Lett. 94, 211904 (2009); http://dx.doi.org/10.1063/1.3142866 (3 pages) | Cited 8 times

Online Publication Date: 27 May 2009

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We present a reversible thermal interface that can circumvent limitations of direct solid-solid contacts. A thin continuous layer of a dielectric liquid is formed between two solid substrates to provide a low-resistance heat conduction path. The liquid is initially confined in an array of discrete microchannels and undergoes reversible morphological transition into a continuous film as the loading pressure is increased. We theoretically and experimentally determine the relationship between loading pressure and liquid morphology. The interfaces can achieve thermal resistance comparable to that of solid-solid contacts but at loading pressures orders of magnitude smaller.
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66.25.+g Thermal conduction in nonmetallic liquids
44.10.+i Heat conduction
68.15.+e Liquid thin films

Dynamics of strain relaxation studied by in situ x-ray diffraction immediately after layer heteroepitaxy

M. Horbaschk, A. Benkert, C. Schumacher, K. Brunner, and R. B. Neder

Appl. Phys. Lett. 94, 211905 (2009); http://dx.doi.org/10.1063/1.3143630 (3 pages) | Cited 2 times

Online Publication Date: 27 May 2009

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The temporal development of strain relaxation is monitored during and immediately after heteroepitaxy by x-ray diffraction with high resolution in strain and time. ZnSe layers on (001)GaAs with thicknesses just a little above the onset of plastic relaxation reveal inhomogeneous, partial relaxation which continues with a time constant of 50 s immediately after the stop of layer growth. A model of generation, glide, and blocking of dislocations well explains the observation that the degree of relaxation finally reached after growth stop is determined by the density of dislocations rapidly generated prior to it.
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68.60.Bs Mechanical and acoustical properties
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
68.55.ag Semiconductors
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances

Band alignment of InAs1−xSbx (0.05<x<0.13)/InAs0.67P0.23Sb0.10 heterostructures

Chen-Jun Wu, Gene Tsai, and Hao-Hsiung Lin

Appl. Phys. Lett. 94, 211906 (2009); http://dx.doi.org/10.1063/1.3144271 (3 pages) | Cited 1 time

Online Publication Date: 28 May 2009

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We determined the unstrained conduction-band and valence-band edge energies of InAs1−xSbx (0.05<x<0.13) by fitting the photoluminescence peak energy of InAsSb/InAs0.67P0.23Sb0.10 quantum wells (QWs) that was measured in the temperature range 10–300 K. The results reveal that the QWs exhibit type-I band alignment. Furthermore, the valence band accounts for 65% of the energy-gap bowing of InAsSb. We propose a valence-band anticrossing (VBAC) model to explain the bowing of the valence band in InAsSb. Moreover, the spin-orbit splitting energy of InAsSb calculated by our VBAC model fits well with the experimental results reported in previous studies.
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73.21.Fg Quantum wells
68.65.Fg Quantum wells
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
78.67.De Quantum wells
78.55.Cr III-V semiconductors
71.20.Nr Semiconductor compounds

Structural heterogeneity and homogeneous nucleation of 1BaO-2SiO2 glass

Yoshihiro Takahashi, Minoru Osada, Hirokazu Masai, and Takumi Fujiwara

Appl. Phys. Lett. 94, 211907 (2009); http://dx.doi.org/10.1063/1.3142394 (3 pages) | Cited 8 times

Online Publication Date: 29 May 2009

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Structural relaxation was examined by in situ Boson peak observation in 1BaO-2SiO2 glass with homogeneous nucleation tendency, in order to clarify the structural heterogeneity. The relation between the glass structure in the medium-range scale and nucleation feature is also discussed. From the results, it is predicted that a sheet-like structure with a network modifier in the resulting crystal is an essential condition for homogeneous nucleation.
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61.43.Fs Glasses
64.70.kj Glasses
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