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Applied Physics Letters / Volume 94 / Issue 22 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 94, 221109 (2009); http://dx.doi.org/10.1063/1.3148812 (3 pages)

Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates

Yun Zhang, Shyh-Chiang Shen, Hee Jin Kim, Suk Choi, Jae-Hyun Ryou, Russell D. Dupuis, and Bravishma Narayan

School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Drive NW, Atlanta, Georgia 30332-0250, USA

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(Received 3 May 2009; accepted 12 May 2009; published online 4 June 2009)

We report low-noise GaN visible-blind homojunction p-i-n photodiodes. The devices are grown on a freestanding bulk GaN substrate and are fabricated using a “ledged” surface depletion technique to suppress the mesa sidewall leakage. For an 80-μm-diameter photodetector, the dark current density is lower than 40 pA/cm2. A room-temperature noise equivalent power of 4.27×10−17 W Hz−0.5 and a detectivity of 1.66×1014 cm Hz0.5 W−1 are achieved at a reverse bias of 20 V. The noise performance of the reverse-biased GaN p-i-n photodiodes are among the best values reported to date and demonstrate the potential of GaN photodiodes for low-noise high-speed UV detection.

© 2009 American Institute of Physics

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KEYWORDS and PACS

Keywords

gallium compounds, III-V semiconductors, photodetectors, p-i-n photodiodes, wide band gap semiconductors

PACS

  • 85.60.Dw

    Photodiodes; phototransistors; photoresistors

  • 81.05.Ea

    III-V semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3148812

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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