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1 Jun 2009

Volume 94, Issue 22, Articles (22xxxx)

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Appl. Phys. Lett. 94, 221101 (2009); http://dx.doi.org/10.1063/1.3143652 (3 pages)

Gangyi Xu, Virginie Moreau, Yannick Chassagneux, Adel Bousseksou, Raffaele Colombelli, G. Patriarche, G. Beaudoin, and I. Sagnes
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Locally induced charged states in La0.89Sr0.11MnO3 single crystals

R. F. Mamin, I. K. Bdikin, and A. L. Kholkin

Appl. Phys. Lett. 94, 222901 (2009); http://dx.doi.org/10.1063/1.3147163 (3 pages) | Cited 8 times

Online Publication Date: 3 June 2009

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Scanning probe microscopy was used to create and to detect local bias induced charged states in La0.89Sr0.11MnO3 single crystals at room temperature. The lifetime of these nonequilibrium states exceeds 100 h. These bias induced states display also a ferroelectriclike hysteresis with piezoelectric contrast reversed by the applied field. Such states showing reversible multifunctional properties are attractive for modern semiconductor technology with its focus on nonvolatile random-access memories.
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75.80.+q Magnetomechanical effects, magnetostriction
75.50.Dd Nonmetallic ferromagnetic materials
77.65.-j Piezoelectricity and electromechanical effects
77.80.Dj Domain structure; hysteresis

Temperature stability of ([Na0.5K0.5NbO3]0.93–[LiTaO3]0.07) lead-free piezoelectric ceramics

Thomas A. Skidmore, Tim P. Comyn, and Steven J. Milne

Appl. Phys. Lett. 94, 222902 (2009); http://dx.doi.org/10.1063/1.3153157 (3 pages) | Cited 26 times

Online Publication Date: 5 June 2009

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A polymorphic phase transition (PPT) is often engineered into lead-free materials to generate high piezoelectric activity at room temperature, limiting their temperature stability. We report [Na0.5K0.5NbO3]0.93–[LiTaO3]0.07 tetragonal ceramics with favorable properties over a broad temperature range due to a high Curie temperature at 447 °C and PPT at −15 °C involving a transition to a monoclinic rather than low temperature orthorhombic phase. Piezoelectric k31 and d31 coefficients varied from 0.19 to 0.14 and −53 to −33 pC/N, respectively, over the range of −15 to 300 °C. Strain-electric field loops provided strains of ∼ 0.2% and a high-field d33 of 205 pm/V.
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77.65.-j Piezoelectricity and electromechanical effects
77.80.B- Phase transitions and Curie point
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.22.Ch Permittivity (dielectric function)
64.70.K- Solid-solid transitions
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Visualization of a ferroelectric domain structure in the X cut of a LiNbO3 crystal using x-ray diffraction and topography

D. V. Roshchupkin, D. V. Irzhak, and V. V. Antipov

Appl. Phys. Lett. 94, 222903 (2009); http://dx.doi.org/10.1063/1.3151817 (3 pages) | Cited 1 time

Online Publication Date: 5 June 2009

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A ferroelectric domain structure formed in the X cut of a LiNbO3 crystal by aftergrowth thermoelectrical treatment was studied by x-ray diffraction and topography methods. An external electric field applied along the X axis to the crystal causes shift deformations due to the reverse piezoelectric effect, which permits visualization of domain structures in the X cut of a LiNbO3 crystal. Oppositely directed inclinations of reflecting planes in adjacent domains, caused by the reverse piezoelectric effect, give rise to different diffraction angles in neighboring domains and make visualization of domain structure possible.
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77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
72.20.Pa Thermoelectric and thermomagnetic effects
77.65.-j Piezoelectricity and electromechanical effects
72.80.Sk Insulators

Charge transport mechanism in amorphous alumina

Yu. N. Novikov, V. A. Gritsenko, and K. A. Nasyrov

Appl. Phys. Lett. 94, 222904 (2009); http://dx.doi.org/10.1063/1.3151861 (3 pages) | Cited 12 times

Online Publication Date: 5 June 2009

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The charge transport mechanism in amorphous Al2O3 was examined both experimentally and theoretically. We have found that electrons are dominant charge carriers in Al2O3. A satisfactory agreement between the experimental and calculated data was obtained assuming the multiphonon ionization mechanism for deep traps in Al2O3. For the thermal and optical trap ionization energies in Al2O3, the values WT = 1.5 eV and Wopt = 3.0 eV were obtained.
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73.61.Ng Insulators
77.55.-g Dielectric thin films
63.20.-e Phonons in crystal lattices
77.22.Ch Permittivity (dielectric function)
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