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1 Jun 2009

Volume 94, Issue 22, Articles (22xxxx)

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Appl. Phys. Lett. 94, 221101 (2009); http://dx.doi.org/10.1063/1.3143652 (3 pages)

Gangyi Xu, Virginie Moreau, Yannick Chassagneux, Adel Bousseksou, Raffaele Colombelli, G. Patriarche, G. Beaudoin, and I. Sagnes
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Surface-emitting quantum cascade lasers with metallic photonic-crystal resonators

Gangyi Xu, Virginie Moreau, Yannick Chassagneux, Adel Bousseksou, Raffaele Colombelli, G. Patriarche, G. Beaudoin, and I. Sagnes

Appl. Phys. Lett. 94, 221101 (2009); http://dx.doi.org/10.1063/1.3143652 (3 pages) | Cited 9 times

Online Publication Date: 1 June 2009

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Surface emitting photonic-crystal quantum cascade lasers operating at λ ≈ 7.3 μm are demonstrated. The photonic crystal resonator is written solely on the top metallization layer. The mismatch between the modes supported by metallized and nonmetallized regions yields enough optical feedback to achieve laser action. The devices exhibit single-mode emission with a side mode suppression ratio of ≈ 20 dB, the wavelength is lithographically tunable across a range of almost 70 cm−1, and the radiation is emitted from the surface. The maximum operating temperature is 220 K. The divergence of the output beam, which is doughnut-shaped, is approximately 9°.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Exact surface plasmon dispersion relations in a linear-metal-nonlinear dielectric structure of arbitrary nonlinearity

Haiping Yin, C. Xu, and P. M. Hui

Appl. Phys. Lett. 94, 221102 (2009); http://dx.doi.org/10.1063/1.3144273 (3 pages) | Cited 8 times

Online Publication Date: 1 June 2009

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Exact analytic expression for obtaining the surface plasmon (SP) dispersion relations in a system consisting of a thin metallic film sandwiched between a linear dielectric and a nonlinear dielectric of arbitrary nonlinearity is derived, based on a generalized first integral approach. The changes in SP dispersion relations on film thicknesses and nonlinearity are studied by model calculations. The thick-film limit generalizes previous results on metal/Kerr-type nonlinear interface to arbitrary nonlinearity. An analytic expression is obtained for the limiting SP frequency at large wave vectors with previous result recovered as a special case.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
77.22.Ch Permittivity (dielectric function)
78.20.Jq Electro-optical effects
68.55.A- Nucleation and growth

Resonantly probing micropillar cavity modes by photocurrent spectroscopy

C. Kistner, S. Reitzenstein, C. Schneider, S. Höfling, and A. Forchel

Appl. Phys. Lett. 94, 221103 (2009); http://dx.doi.org/10.1063/1.3147162 (3 pages) | Cited 4 times

Online Publication Date: 1 June 2009

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We demonstrate electrical readout of high quality quantum dot micropillars by means of photocurrent (PC) spectroscopy under resonant excitation. Applying this technique enables a high spectral resolution mapping of the optical mode spectrum of the micropillar revealing quality factors of up to 11 000 for a 3 μm diameter device. PC spectroscopy also shows that the contacted micropillars can act as light sensors with highly wavelength selective and photon sensitive detection capabilities down to 20 nW incident power. Moreover, bias voltage dependent PC studies provide an effective tool to study the competition between carrier tunneling out of the quantum dots and the radiative recombination.
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81.07.Ta Quantum dots
73.21.La Quantum dots
72.40.+w Photoconduction and photovoltaic effects
73.40.Gk Tunneling
78.67.Hc Quantum dots
79.60.-i Photoemission and photoelectron spectra

Electronic properties of nanocrystalline LaNiO3 and La0.5Sr0.5CoO3 conductive films grown on silicon substrates determined by infrared to ultraviolet reflectance spectra

Z. G. Hu, W. W. Li, Y. W. Li, M. Zhu, Z. Q. Zhu, and J. H. Chu

Appl. Phys. Lett. 94, 221104 (2009); http://dx.doi.org/10.1063/1.3148339 (3 pages) | Cited 4 times

Online Publication Date: 1 June 2009

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Electronic band structures of nanostructured LaNiO3 (LNO) and La0.5Sr0.5CoO3 (LSCO) films have been investigated by near-normal incident optical reflectance at room temperature. Dielectric constants of the conductive films in the photon energy range of 0.47–6.5 eV have been extracted with the Drude–Lorentz function. It is found that four interband electronic transitions can be uniquely assigned for the perovskite-type metallic oxides. Moreover, optical conductivity is approximately varied from 100 to 450 Ω−1 cm−1 and shows a different variation trend for the LNO and LSCO layers. The discrepancy could be ascribed to diverse electronic structure, grain size, and crystalline formation.
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73.22.-f Electronic structure of nanoscale materials and related systems
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
77.22.Ch Permittivity (dielectric function)
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics

Time-resolved characterization of external-cavity quantum-cascade lasers

Borislav Hinkov, Quankui Yang, Frank Fuchs, Wolfgang Bronner, Klaus Köhler, and Joachim Wagner

Appl. Phys. Lett. 94, 221105 (2009); http://dx.doi.org/10.1063/1.3142875 (3 pages) | Cited 4 times

Online Publication Date: 1 June 2009

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We report on the temporal and spectral evolution of the lasing spectrum of an external-cavity quantum-cascade (QC) laser operated in pulsed mode. Time-resolved lasing spectra, recorded on nanosecond time scale, revealed that after turn-on of the 100 ns current pulse multiple-mode lasing starts at the gain maximum of the QC laser controlled by the cavity formed by the chip facets. Depending on the spectral tuning after a time delay of 15–35 ns, the QC laser couples to the external cavity as seen from a change in lasing wavelength to that defined by the external grating as wavelength selective element.
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42.55.Px Semiconductor lasers; laser diodes

Observation of stimulated Raman scattering in silicon nanocomposites

L. Sirleto, M. A. Ferrara, G. Nicotra, C. Spinella, and I. Rendina

Appl. Phys. Lett. 94, 221106 (2009); http://dx.doi.org/10.1063/1.3148669 (3 pages) | Cited 3 times

Online Publication Date: 2 June 2009

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In this paper, we report on the observation of stimulated Raman scattering in silicon nanocomposites, consisting of silicon nanoparticles dispersed in SiO2 matrix prepared by sol-gel method. Using a 1427 nm cw pump laser, amplification of Stokes signal, at 1542.2 nm, up to 1.4 dB/cm is demonstrated. A preliminary valuation of approximately a fivefold enhancement of the gain coefficient in Raman amplifier based on silicon nanocomposites with respect to silicon and a significant reduction of threshold power are also reported. These results have a potential interest for silicon-based Raman lasers.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.55.Ye Raman lasers
42.55.Wd Fiber lasers

Distortion of the intense terahertz signal measured by spectral-encoding technique

Xiao-Yu Peng, Ralph Jung, Toma Toncian, Oswald Willi, and Jing-Hua Teng

Appl. Phys. Lett. 94, 221107 (2009); http://dx.doi.org/10.1063/1.3148674 (3 pages) | Cited 3 times

Online Publication Date: 2 June 2009

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We demonstrate that a distortion of the terahertz signal measured by spectral-encoding technique occurs when the original signal is too intense. We found that the stronger the original signal is, the more severe the distortion of the retrieved signal will be. Our simulation reproduces this phenomenon and suggests that this distortion, which affects the application of the single-shot terahertz detection technique, comes from the neglect of the quadratic term of the modulation depth which reflects the strength of the terahertz signal in the retrieving process. A possible simple method is proposed to eliminate this distortion.
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84.40.Ua Telecommunications: signal transmission and processing; communication satellites
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High-speed liquid lens with 2 ms response and 80.3 nm root-mean-square wavefront error

H. Oku and M. Ishikawa

Appl. Phys. Lett. 94, 221108 (2009); http://dx.doi.org/10.1063/1.3143624 (3 pages) | Cited 19 times

Online Publication Date: 2 June 2009

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A liquid lens structure with a step response time of 2 ms, a refractive power range of 52 D, and a root-mean-square (rms) wavefront error of 80.3 nm is reported. This lens uses a liquid-liquid interface with a pinned contact line as a variable refractive surface, and its shape is controlled by a piezostack actuator via a built-in hydraulic amplifier. The measured wavefront error suggests that the method of pinning the contact line to a precise shape is an important factor in achieving higher optical performance.
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42.79.Bh Lenses, prisms and mirrors
07.07.Tw Servo and control equipment; robots
07.05.Dz Control systems
42.15.Fr Aberrations

Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates

Yun Zhang, Shyh-Chiang Shen, Hee Jin Kim, Suk Choi, Jae-Hyun Ryou, Russell D. Dupuis, and Bravishma Narayan

Appl. Phys. Lett. 94, 221109 (2009); http://dx.doi.org/10.1063/1.3148812 (3 pages) | Cited 6 times

Online Publication Date: 4 June 2009

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We report low-noise GaN visible-blind homojunction p-i-n photodiodes. The devices are grown on a freestanding bulk GaN substrate and are fabricated using a “ledged” surface depletion technique to suppress the mesa sidewall leakage. For an 80-μm-diameter photodetector, the dark current density is lower than 40 pA/cm2. A room-temperature noise equivalent power of 4.27×10−17 W Hz−0.5 and a detectivity of 1.66×1014 cm Hz0.5 W−1 are achieved at a reverse bias of 20 V. The noise performance of the reverse-biased GaN p-i-n photodiodes are among the best values reported to date and demonstrate the potential of GaN photodiodes for low-noise high-speed UV detection.
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85.60.Dw Photodiodes; phototransistors; photoresistors
81.05.Ea III-V semiconductors

High power efficiency in Si-nc/SiO2 multilayer light emitting devices by bipolar direct tunneling

A. Marconi, A. Anopchenko, M. Wang, G. Pucker, P. Bellutti, and L. Pavesi

Appl. Phys. Lett. 94, 221110 (2009); http://dx.doi.org/10.1063/1.3147164 (3 pages) | Cited 34 times

Online Publication Date: 4 June 2009

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We demonstrate experimentally bipolar (electrons and holes) current injection into silicon nanocrystals in thin nanocrystalline-Si/SiO2 multilayers. These light emitting devices have power efficiency of 0.17% and turn-on voltage of 1.7 V. The high electroluminescence efficiency and low onset voltages are attributed to the radiative recombination of excitons formed by both electron and hole injection into silicon nanocrystals via the direct tunneling mechanism. To confirm the bipolar character, different devices were grown, with and without a thick silicon oxide barrier at the multilayer contact electrodes. A transition from bipolar tunneling to unipolar Fowler–Nordheim tunneling is thus observed.
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78.66.Db Elemental semiconductors and insulators
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
73.40.Gk Tunneling
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Impact of disorder on surface plasmons in two-dimensional arrays of metal nanoparticles

J. B. Khurgin and G. Sun

Appl. Phys. Lett. 94, 221111 (2009); http://dx.doi.org/10.1063/1.3152292 (3 pages) | Cited 5 times

Online Publication Date: 5 June 2009

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We study the impact of disorder on the properties of surface plasmons (SP) in metal nanoparticle arrays and develop analytical expressions enabling us to ascertain the degree of localization and mixing between the SP states. We show that it might be advantageous to intentionally introduce a certain degree of disorder in order to engineer the improved sensors and detectors.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
73.22.Lp Collective excitations
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

Enhanced directional lasing by the interference between stable and unstable periodic orbits

Yuan Yao Lin, Chih-Yao Chen, Wei Chien, Jin-Shan Pan, Tsin-Dong Lee, and Ray-Kuang Lee

Appl. Phys. Lett. 94, 221112 (2009); http://dx.doi.org/10.1063/1.3148682 (3 pages) | Cited 2 times

Online Publication Date: 5 June 2009

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We demonstrate the idea of surface-assisted microstructures to tailor the modes and resulting emission from a dynamical localized vertical cavity surface emitting laser at room temperature. With a slightly mismatch between the surface structure and the native oxide cavity layer, near field intensity images corresponding to the spontaneous emission patterns, whispering-gallery modes (WGMs), dynamical localized modes (DLMs), and unidirectional light emissions are measured and identified in experiments and simulations. Moreover, the coherent superposition of WGM and DLM, i.e., stable and unstable periodic orbits, respectively, is reported to provide an alternative and general method to control lasing characteristics as well as to study quantum chaos in mesoscopic system.
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42.55.Px Semiconductor lasers; laser diodes
42.25.Hz Interference
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency

Optimal electro-optic sensor configuration for phase noise limited, remote field sensing applications

A. Garzarella, S. B. Qadri, and Dong Ho Wu

Appl. Phys. Lett. 94, 221113 (2009); http://dx.doi.org/10.1063/1.3152792 (3 pages) | Cited 3 times

Online Publication Date: 5 June 2009

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Electro-optic (EO) sensors, used for the nonperturbative detection of electric fields, are typically configured to modulate an optical probe beam along a crystal direction in which the EO tensor coefficient is largest. However in fiber optic EO sensors, such configurations can be strongly limited by phase noise and cumbersome compensation optics. Our results demonstrate that a greater signal to noise ratio can be achieved by modulating along a crystal direction of low static birefringence, even when the active EO tensor coefficient is several times smaller.
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42.81.Pa Sensors, gyros
42.79.-e Optical elements, devices, and systems
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