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8 Jun 2009

Volume 94, Issue 23, Articles (23xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 94, 233101 (2009); http://dx.doi.org/10.1063/1.3148782 (3 pages)

E. Moyen, M. Macé, G. Agnus, A. Fleurence, T. Maroutian, F. Houzé, A. Stupakiewicz, L. Masson, B. Bartenlian, W. Wulfhekel, P. Beauvillain, and M. Hanbücken
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Effect of indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors

Gun Hee Kim, Byung Du Ahn, Hyun Soo Shin, Woong Hee Jeong, Hee Jin Kim, and Hyun Jae Kim

Appl. Phys. Lett. 94, 233501 (2009); http://dx.doi.org/10.1063/1.3151827 (3 pages) | Cited 37 times

Online Publication Date: 8 June 2009

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The effects of the indium content on characteristics of nanocrystalline InGaZnO (IGZO) films grown by a sol-gel method and their thin film transistors (TFTs) have been investigated. Excess indium incorporation into IGZO enhances the field effect mobilities of the TFTs due to the increase in conducting path ways and decreases the grain size and the surface roughness of the films because more InO2− ions induce cubic stacking faults with IGZO. These structural variations result in a decrease in density of interfacial trap sites at the semiconductor-gate insulator interface, leading to an improvement of the subthreshold gate swing of the TFTs.
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73.61.Ga II-VI semiconductors
81.05.Dz II-VI semiconductors
68.55.ag Semiconductors
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.07.Bc Nanocrystalline materials
85.30.Tv Field effect devices
73.50.Dn Low-field transport and mobility; piezoresistance
68.35.bg Semiconductors
81.16.-c Methods of micro- and nanofabrication and processing
61.72.Nn Stacking faults and other planar or extended defects

Efficient light harvesting in hybrid CdTe nanocrystal/bulk GaAs p-i-n photovoltaic devices

Soontorn Chanyawadee, Richard T. Harley, David Taylor, Mohamed Henini, Andrei S. Susha, Andrey L. Rogach, and Pavlos G. Lagoudakis

Appl. Phys. Lett. 94, 233502 (2009); http://dx.doi.org/10.1063/1.3148368 (3 pages) | Cited 8 times

Online Publication Date: 9 June 2009

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A hybrid colloidal CdTe nanocrystal/bulk GaAs p-i-n heterostructure is demonstrated to have potential for highly efficient light harvesting photovoltaic devices. An array of rectangular channels is fabricated on the surface of the GaAs heterostructure penetrating through its active layer and subsequently filled with water soluble CdTe nanocrystals emitting in the near infrared. Photogenerated carriers in the highly absorbing colloidal nanocrystals are efficiently transferred by means of nonradiative energy transfer to the patterned heterostructure possessing high carrier mobility and converted to electrical current. A threefold enhancement of both photocurrent and monochromatic power conversion efficiency has been achieved.
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85.60.-q Optoelectronic devices

One-dimensional contact mode interdigitated center of pressure sensor

Tian-Bing Xu, Nelson Guerreiro, James Hubbard, Jin Ho Kang, Cheol Park, and Joycelyn Harrison

Appl. Phys. Lett. 94, 233503 (2009); http://dx.doi.org/10.1063/1.3152010 (3 pages)

Online Publication Date: 9 June 2009

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A one-dimensional contact mode interdigitated center of pressure sensor (CMIPS) has been developed. The experimental study demonstrated that the CMIPS has the capability to measure the overall pressure as well as the center of pressure in one dimension simultaneously. A theoretical model for the CMIPS is established here based on the equivalent circuit of the configuration of the CMIPS as well as the material properties of the sensor. The experimental results match well with theoretical modeling predictions. A system mapped with two or more pieces of the CMIPS can be used to obtain information from the pressure distribution in multidimensions.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Exciton dissociation and photovoltaic effect in germanium nanocrystals and poly(3-hexylthiophene) composites

Baoquan Sun, Guifu Zou, Xiaojuan Shen, and Xiaohong Zhang

Appl. Phys. Lett. 94, 233504 (2009); http://dx.doi.org/10.1063/1.3152997 (3 pages) | Cited 11 times

Online Publication Date: 9 June 2009

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Exciton dissociation and carrier transport in poly(3-hexylthiophene) (P3HT)/germanium (Ge) nanocrystals composites were investigated by steady-state and time-resolved photoluminescence (PL) as well as photovoltaic (PV) effect. Quenching of the PL quantum yield η and shortening of the PL lifetime τ in the composites were observed, which were ascribed to rapid exciton dissociate at the interface. PV devices were fabricated based on Ge/P3HT composites sandwiched between indium tin oxide and aluminum. The external quantum efficiency spectrum displayed wide photoresponse range, covering both nanocrystals absorption range and P3HT one. Large open circuit voltage up to 0.45 V and obvious short-circuit current were demonstrated in hybrid Ge nanocrystals/P3HT PV device.
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71.35.-y Excitons and related phenomena
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
72.20.Fr Low-field transport and mobility; piezoresistance
72.40.+w Photoconduction and photovoltaic effects
73.63.Bd Nanocrystalline materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.55.Ap Elemental semiconductors
78.55.Kz Solid organic materials

Breakdown phenomena of Al-based high-k dielectric/SiO2 stack on 4H-SiC

A. Kumta, Rusli, and J. H. Xia

Appl. Phys. Lett. 94, 233505 (2009); http://dx.doi.org/10.1063/1.3151917 (3 pages) | Cited 4 times

Online Publication Date: 10 June 2009

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In this report we present the breakdown phenomena of Al-based high-k dielectrics and thermal SiO2 intermediate layer stack on 4H-SiC. The Al-based dielectrics, namely, sputter deposited aluminum nitride (AlNx) and hydrogenated aluminum nitride (AlNy:H), have been used to form metal-insulator-semiconductor (MIS) capacitors and field-plate terminated Schottky barrier diodes (SBDs) on 4H-SiC. Multistep breakdown modes visible on these devices have been investigated using measurements of dielectric relaxation currents on MIS capacitors.
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77.22.Jp Dielectric breakdown and space-charge effects
84.32.Tt Capacitors
85.30.Tv Field effect devices
73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Hi Surface barrier, boundary, and point contact devices
85.30.Kk Junction diodes

Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators

Marc Faucher, Bertrand Grimbert, Yvon Cordier, Nicolas Baron, Arnaud Wilk, Hacène Lahreche, Philippe Bove, Marc François, Pascal Tilmant, Thomas Gehin, Christiane Legrand, Matthieu Werquin, Lionel Buchaillot, Christophe Gaquière, and Didier Théron

Appl. Phys. Lett. 94, 233506 (2009); http://dx.doi.org/10.1063/1.3153504 (3 pages) | Cited 5 times

Online Publication Date: 10 June 2009

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A fully integrated electromechanical resonator is described that is based on high mobility piezoelectric semiconductors for actuation and detection of nanoscale motion. We employ the two-dimensional electron gas present at an AlGaN/GaN interface and the piezoelectric properties of this heterostructure to demonstrate a resonant high-electron-mobility transistor enabling the detection of strain variation. In this device, we take advantage of the polarization field divergence originated by mechanical flexural modes for generating piezoelectric doping. This enables a modulation of carrier density which results in a large current flow and thus constitutes a motion detector with intrinsic amplification.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
85.30.Tv Field effect devices
77.65.Fs Electromechanical resonance; quartz resonators

Electric field dependence of trap-assisted-tunneling current in strained SiGe source/drain junctions

M. Bargallo Gonzalez, E. Simoen, B. Vissouvanadin, G. Eneman, P. Verheyen, R. Loo, and C. Claeys

Appl. Phys. Lett. 94, 233507 (2009); http://dx.doi.org/10.1063/1.3149707 (3 pages) | Cited 1 time

Online Publication Date: 11 June 2009

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This paper evaluates the impact of the local electric field on the leakage current of strained Si1−xGex source/drain junctions. The difference in the SiGe and Si lattice constants creates a biaxial in-plane compressive stress in the epilayer and a tensile expansion on the top of the underlying silicon substrate. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were employed to further investigate the stress-induced leakage current when field-assisted mechanisms such as trap-assisted-tunneling and band-to-band-tunneling are dominant, owing to the presence of high electric fields in the highly doped silicon depletion region.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.35.Gy Mechanical properties; surface strains
61.72.U- Doping and impurity implantation
61.66.Hq Organic compounds
68.55.ag Semiconductors
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