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15 Jun 2009

Volume 94, Issue 24, Articles (24xxxx)

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Appl. Phys. Lett. 94, 241101 (2009); http://dx.doi.org/10.1063/1.3153146 (3 pages)

G. Walter, C. H. Wu, H. W. Then, M. Feng, and N. Holonyak, Jr.
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A hybrid solid-liquid polymer photodiode for the bioenvironment

M. R. Antognazza, D. Ghezzi, D. Musitelli, M. Garbugli, and G. Lanzani

Appl. Phys. Lett. 94, 243501 (2009); http://dx.doi.org/10.1063/1.3153846 (3 pages) | Cited 3 times

Online Publication Date: 15 June 2009

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We demonstrate that a prototypical semiconducting polymer, poly[2-methoxy-5-(2′-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV) maintains unaltered its optoelectronic properties throughout the various steps for neural preparation. Films of MEH-PPV, after prolonged immersion in water or buffer solution, are characterized by linear and nonlinear optical spectroscopy. Based on this result, we introduce a hybrid solid-liquid photodiode based on MEH-PPV, in which we use culturing media as liquid, ionic cathodes. The hybrid device is proposed as an active interface between living tissue and conducting polymers for cell diagnostic and neural implants.
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85.60.Dw Photodiodes; phototransistors; photoresistors

Low-resistance smooth-surface Ti/Al/Cr/Mo/Au n-type Ohmic contact to AlGaN/GaN heterostructures

Yung-Ling Lan, Hung-Cheng Lin, Hsueh-Hsing Liu, Geng-Yen Lee, Fan Ren, Stephen J. Pearton, Mao-Nan Chang, and Jen-Inn Chyi

Appl. Phys. Lett. 94, 243502 (2009); http://dx.doi.org/10.1063/1.3155195 (3 pages) | Cited 2 times

Online Publication Date: 15 June 2009

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A comparative study of the specific contact resistivity and surface morphology of Ti/Al/Ni/Au, Ti/Cr/Mo/Au, and Ti/Al/Cr/Mo/Au metal contact stacks on AlGaN/GaN heterostructures is reported. Compared to the conventional Ti/Al/Ni/Au contact, the Ti/Al/Cr/Mo/Au contact has much smoother surface and achieves minimum specific contact resistivity of 1.1×10−6 Ω cm2. This contact maintains its low contact resistivity after storage at 200 °C for 100 h in N2. The robustness of this contact is attributed to the Cr and Mo layers, which suppress the formation of Al–Au alloys in the contact stack.
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73.40.Ns Metal-nonmetal contacts
73.40.Cg Contact resistance, contact potential

Room-temperature temperature sensitivity and resolution of doped-silicon microcantilevers

Elise A. Corbin, Keunhan Park, and William P. King

Appl. Phys. Lett. 94, 243503 (2009); http://dx.doi.org/10.1063/1.3154567 (3 pages) | Cited 2 times

Online Publication Date: 16 June 2009

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An atomic force microscope microcantilever having an integrated solid-state resistor can be used as a heater or a resistive thermometer. The temperature sensitivity and resolution of these cantilevers were investigated under steady and periodic operation near 300 K. Overall, the temperature coefficient of resistance of the cantilever is 0.0029 K−1 at 300 K. When the cantilever is placed under periodic heating conditions the temperature resolution is measured as low as 5 mK. This characterization of heated cantilevers enables precise measurement of small temperature changes, and could improve nanoscale thermal measurements.
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07.20.Dt Thermometers
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.10.Cm Micromechanical devices and systems
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.79.Lh Atomic force microscopes

Transient phase change effect during the crystallization process in phase change memory devices

E. G. Yeo, R. Zhao, L. P. Shi, K. G. Lim, T. C. Chong, and I. Adesida

Appl. Phys. Lett. 94, 243504 (2009); http://dx.doi.org/10.1063/1.3155200 (3 pages) | Cited 2 times

Online Publication Date: 17 June 2009

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The transient current waveform during a crystallization process in a phase change memory device was measured and analyzed. It revealed two important time parameters, which were termed as delay time and current recovery time. A link between this transient phase change effect and its crystallization kinetics was established. The delay time was found to be the minimum pulse duration before an onset of resistance change. The current recovery time was the time the device takes to complete its transition from high resistance to low resistance. Real-time crystallization characterization was applied to demonstrate the differences between nucleation and growth dominated materials used in the devices.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes

L. Nougaret, H. Happy, G. Dambrine, V. Derycke, J. -P. Bourgoin, A. A. Green, and M. C. Hersam

Appl. Phys. Lett. 94, 243505 (2009); http://dx.doi.org/10.1063/1.3155212 (3 pages) | Cited 32 times

Online Publication Date: 17 June 2009

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This paper presents the high frequency performance of single-walled carbon nanotube (SWNT) field-effect transistors, with channel consisting of dense networks of high purity semiconducting SWNTs. Using SWNT samples containing 99% pure semiconducting SWNTs, we achieved operating frequencies above 80 GHz. This record frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of random networks of sorted SWNTs for high frequency electronics.
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85.30.Tv Field effect devices
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
85.35.Kt Nanotube devices

White light-emitting devices based on the combined emission from red CdSe/ZnS quantum dots, green phosphorescent, and blue fluorescent organic molecules

Gang Cheng, Marco Mazzeo, Aurora Rizzo, Yanqin Li, Yu Duan, and Giuseppe Gigli

Appl. Phys. Lett. 94, 243506 (2009); http://dx.doi.org/10.1063/1.3157131 (3 pages) | Cited 15 times

Online Publication Date: 18 June 2009

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We report on a white hybrid light-emitting device realized by combining red emission from CdSe/ZnS quantum dots (QDs), green emission from a phosphorescent organic complex tris[2-4(4-toltyl)phenylpyridine]iridium [Ir(mppy)3], and blue emission from a fluorescent organic emitter 2,2′,7,7′-tetrakis(2,2-diphenylvinyl)spiro-9,9′-bifluorene. Energy transfer processes from the organic components to the QDs have been analyzed versus the Ir(mppy)3 concentration in order to optimize the device performances. A maximum external quantum efficiency of 2.1%, corresponding to a power efficiency of 2.2 lm/W at 13 mA/cm2, and a color rendering index of 89.8 at 10 200 cd/m2 were achieved.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Fabrication and characterization of all-thin-film magnetoelectric sensors

Peng Zhao, Zhenli Zhao, Dwight Hunter, Richard Suchoski, Chen Gao, Scott Mathews, Manfred Wuttig, and Ichiro Takeuchi

Appl. Phys. Lett. 94, 243507 (2009); http://dx.doi.org/10.1063/1.3157281 (3 pages) | Cited 32 times

Online Publication Date: 19 June 2009

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ac magnetic field sensors based on thin-film magnetoelectric (ME) devices operating at room temperature have been fabricated. The ME layers consist of a sol-gel derived Pb(Zr0.52Ti0.48)O3 film and a sputter deposited Fe0.7Ga0.3 film on Si cantilevers. The ME coupling is substantially improved by depositing a Pt layer at the interface. The ME coefficient up to 1.81 V/Oe cm is obtained at the mechanical resonant frequency of 333 Hz and at dc bias magnetic field of 90 Oe. Clear reduction in the substrate clamping effect is observed as the Si cantilever thickness is systematically reduced down to 35 μm.
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06.30.Ka Basic electromagnetic quantities
85.75.Ss Magnetic field sensors using spin polarized transport
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
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