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29 Jun 2009

Volume 94, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 94, 263501 (2009); http://dx.doi.org/10.1063/1.3136905 (3 pages)

Changxin Chen, Wei Zhang, Eric Siu-Wai Kong, and Yafei Zhang
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Carbon nanotube photovoltaic device with asymmetrical contacts

Changxin Chen, Wei Zhang, Eric Siu-Wai Kong, and Yafei Zhang

Appl. Phys. Lett. 94, 263501 (2009); http://dx.doi.org/10.1063/1.3136905 (3 pages) | Cited 3 times

Online Publication Date: 29 June 2009

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A photovoltaic (PV) device based on “high-work-function metal/single-walled carbon nanotube/low-work-function metal” hybrid junction has been studied theoretically by the self-consistent nonequilibrium Green’s function approach. The PV effect and power conversion efficiency (η) of the device under light illumination are simulated, with a monochromatic η of higher than 40% for incident photon energies near the nanotube band-gap energy predicted. It is shown that the gate voltage and gate oxide thickness have an important influence on the device η.
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85.60.-q Optoelectronic devices
85.40.Ls Metallization, contacts, interconnects; device isolation
85.35.Kt Nanotube devices
02.30.-f Function theory, analysis

Recovery time scales in a reversed-biased quantum dot absorber

Evgeny A. Viktorov, Thomas Erneux, Paul Mandel, Tomasz Piwonski, Gillian Madden, Jaroslaw Pulka, Guillaume Huyet, and John Houlihan

Appl. Phys. Lett. 94, 263502 (2009); http://dx.doi.org/10.1063/1.3159838 (3 pages) | Cited 9 times

Online Publication Date: 30 June 2009

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The nonlinear recovery of quantum dot based reverse-biased waveguide absorbers is investigated both experimentally and analytically. We show that the recovery dynamics consists of a fast initial layer followed by a relatively slow decay. The fast recovery stage is completely determined by the intradot properties, while the slow stage depends on the escape from the dot to the wetting layer.
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42.65.Wi Nonlinear waveguides
42.86.+b Optical workshop techniques

Orthogonal surface acoustic wave device based on langasite for simultaneous biosensing and biofouling removal

Reetu Singh, Subramanian K. R. S. Sankaranarayanan, and Venkat R. Bhethanabotla

Appl. Phys. Lett. 94, 263503 (2009); http://dx.doi.org/10.1063/1.3160735 (3 pages) | Cited 2 times

Online Publication Date: 30 June 2009

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We report a combined three-dimensional structural and fluid structure interaction finite element study of an orthogonal surface acoustic wave (SAW) device based on langasite (LGS). Our simulation results indicate that simultaneous sensing and nonspecifically bound protein removal can be achieved through the use of multidirectional transducers on a single piezoelectric device. We find that the (0, 22, 90) Euler direction on the LGS-based device is suitable for biosensing via propagation of pure shear-horizontal waves, whereas the (0, 22, 0) direction allows for acoustic streaming induced biofouling removal through the propagation of mixed mode waves with prominent surface normal component. This study reveals the possibility of integrating sensing and biofouling removal functions on a single SAW device, thereby enhancing sensor performance.
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87.85.fk Biosensors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
43.60.Vx Acoustic sensing and acquisition

Bidirectional current-voltage converters based on magnetostrictive/piezoelectric composites

Yanmin Jia, Siu Wing Or, Helen Lai Wa Chan, Jie Jiao, Haosu Luo, and S. van der Zwaag

Appl. Phys. Lett. 94, 263504 (2009); http://dx.doi.org/10.1063/1.3160739 (3 pages) | Cited 3 times

Online Publication Date: 30 June 2009

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We report a power supply-free, bidirectional electric current-voltage converter based on a coil-wound laminated composite of magnetostrictive alloy and piezoelectric crystal. An electric current applied to the coil induces a magnetic field, resulting in an electric voltage from the composite due to the direct magnetoelectric effect. Conversely, an electric voltage applied to the composite produces a magnetic induction due to the converse magnetoelectric effect, leading to an electric current from the coil. The converter exhibits excellent linear relationships between current and voltage. Compared with traditional current/voltage converters made by operational amplifiers, the advantages of the proposed device include low cost, no power consumption, and bidirectional conversion.
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85.70.Ec Magnetostrictive, magnetoacoustic, and magnetostatic devices
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.65.-j Piezoelectricity and electromechanical effects
75.80.+q Magnetomechanical effects, magnetostriction

Development of enhancement mode AlN/GaN high electron mobility transistors

C. Y. Chang, S. J. Pearton, C. F. Lo, F. Ren, I. I. Kravchenko, A. M. Dabiran, A. M. Wowchak, B. Cui, and P. P. Chow

Appl. Phys. Lett. 94, 263505 (2009); http://dx.doi.org/10.1063/1.3168648 (3 pages) | Cited 14 times

Online Publication Date: 30 June 2009

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Enhancement mode AlN/GaN high electron mobility transistors (HEMTs) were fabricated from originally depletion-mode structures using oxygen plasma treatment on the gate area prior to the gate metallization. Starting with a depletion mode AlN/GaN HEMT, the threshold voltage of the HEMT could be shifted from −3.2 to 1 V depending on the oxygen plasma treatment time to partially convert the AlN barrier layer into Al oxide. The gate current was reduced and the current-voltage curves show metal-oxide semiconductor diodelike characteristics after oxygen plasma treatment.
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85.30.Tv Field effect devices
52.77.-j Plasma applications
85.40.Ls Metallization, contacts, interconnects; device isolation

The effects of shell characteristics on the current-voltage behaviors of dye-sensitized solar cells based on ZnO/TiO2 core/shell arrays

Meili Wang, Changgang Huang, Yongge Cao, Qingjiang Yu, Wang Guo, Qiufeng Huang, Yuan Liu, Zhi Huang, Jiquan Huang, Hai Wang, and Zhonghua Deng

Appl. Phys. Lett. 94, 263506 (2009); http://dx.doi.org/10.1063/1.3167811 (3 pages) | Cited 9 times

Online Publication Date: 1 July 2009

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The ZnO/TiO2 core/shell structure was formed through deposition of a TiO2 coating layer on the hydrothermally fabricated ZnO nanorod arrays through radio frequency magnetron sputtering. The effects of the TiO2 shell’s characteristics on the current-voltage behaviors of the core/shell-based dye-sensitized solar cells (CS-DSSC) were investigated. As the rates of injection, transfer, and recombination of electrons of such CS-DSSC were affected significantly by the crystallization, morphology, and continuity of the TiO2 shells, the photovoltaic efficiency was accordingly varied remarkably. In addition, the efficiency was further improved by enhancing the surface area in the core/shell electrode.
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84.60.Jt Photoelectric conversion
81.65.-b Surface treatments
73.63.-b Electronic transport in nanoscale materials and structures
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
81.15.Cd Deposition by sputtering
81.16.-c Methods of micro- and nanofabrication and processing
72.40.+w Photoconduction and photovoltaic effects

Retention in nonvolatile silicon transistors with an organic ferroelectric gate

Roman Gysel, Igor Stolichnov, Alexander K. Tagantsev, Sebastian W. E. Riester, Nava Setter, Giovanni A. Salvatore, Didier Bouvet, and Adrian M. Ionescu

Appl. Phys. Lett. 94, 263507 (2009); http://dx.doi.org/10.1063/1.3158959 (3 pages) | Cited 8 times

Online Publication Date: 1 July 2009

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A silicone-based one-transistor nonvolatile memory cell has been implemented by integration of a ferroelectric polymer gate on a standard n-type metal oxide semiconductor field effect transistor. The polarization reversal in the gate results in a stable and reproducible memory effect changing the source-drain current by a factor 102–103, with the retention exceeding 2–3 days. Analysis of the drain current relaxation and time-resolved study of the spontaneous polarization via piezoforce scanning probe microscopy indicates that the retention loss is controlled by the interface-adjacent charge injection rather than the polarization instability. A semiquantitative model describes the time-dependent retention loss characterized by an exponential decay of the open state current of the transistor. The unique combination of properties of the ferroelectric copolymer of vinylidene fluoride and trifluoroethylene, including an adequate spontaneous polarization and low dielectric constant as well as rather benign processing demands, makes this material a promising candidate for memories fully compatible with silicon technology.
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85.50.Gk Non-volatile ferroelectric memories
85.30.Tv Field effect devices
84.30.Sk Pulse and digital circuits

Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator

D. Kazazis, P. Jannaty, A. Zaslavsky, C. Le Royer, C. Tabone, L. Clavelier, and S. Cristoloveanu

Appl. Phys. Lett. 94, 263508 (2009); http://dx.doi.org/10.1063/1.3168646 (3 pages) | Cited 14 times

Online Publication Date: 2 July 2009

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We report on the fabrication and electrical characterization at room and low temperatures of a tunneling field-effect transistor (TFET). The devices are fabricated in thin germanium-on-insulator and consist of a heavily p+-doped, epitaxially grown source, a heavily n+-doped ion implanted drain, and a standard high-κ (HfO2) gate stack with an effective gate length Leff of 60 nm, obtained by trimming. The TFETs are fabricated using an ultralarge-scale integration compatible process flow. The devices exhibit an ambipolar behavior, reasonable on/off current ratio, and improved on current compared to silicon-on-insulator TFETs.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
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