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29 Jun 2009

Volume 94, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 94, 263501 (2009); http://dx.doi.org/10.1063/1.3136905 (3 pages)

Changxin Chen, Wei Zhang, Eric Siu-Wai Kong, and Yafei Zhang
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Change of the trap energy levels of the atomic layer deposited HfLaOx films with different La concentration

Chee-Hong An, Myung Soo Lee, Ju-Yun Choi, and Hyoungsub Kim

Appl. Phys. Lett. 94, 262901 (2009); http://dx.doi.org/10.1063/1.3159625 (3 pages) | Cited 7 times

Online Publication Date: 30 June 2009

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Ultrathin HfO2 and HfLaOx films with La/(Hf+La) ratios of 42%, 57%, and 64% were synthesized with an atomic layer deposition process. By measuring the leakage current at different temperatures, the conduction mechanism of HfO2 and HfLaOx films was shown to follow the Poole–Frenkel emission model under a gate injection condition. Based on the temperature and field-dependence measurements, the intrinsic trap energy levels were found to be 1.42, 1.34, 1.03, and 0.98 eV for the HfLaOx samples with La/(Hf+La) ratios of 0%, 42%, 57%, and 64%, respectively, showing a decreasing behavior as the La content increased.
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77.55.-g Dielectric thin films
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Ng Insulators
72.20.Ht High-field and nonlinear effects

Maximal energy that can be converted by a dielectric elastomer generator

Soo Jin Adrian Koh, Xuanhe Zhao, and Zhigang Suo

Appl. Phys. Lett. 94, 262902 (2009); http://dx.doi.org/10.1063/1.3167773 (3 pages) | Cited 46 times

Online Publication Date: 30 June 2009

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Mechanical energy can be converted to electrical energy by using a dielectric elastomer generator. The elastomer is susceptible to various modes of failure, including electrical breakdown, electromechanical instability, loss of tension, and rupture by stretch. The modes of failure define a cycle of maximal energy that can be converted. This cycle is represented on planes of work-conjugate coordinates and may be used to guide the design of practical cycles.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Dielectric relaxation and relaxor behavior in bilayered perovskites

Y. González-Abreu, A. Peláiz-Barranco, E. B. Araújo, and A. Franco Júnior

Appl. Phys. Lett. 94, 262903 (2009); http://dx.doi.org/10.1063/1.3168651 (3 pages) | Cited 8 times

Online Publication Date: 30 June 2009

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Sr0.5Ba0.5Bi2Nb2O9 ferroelectric ceramics exhibit a complex dielectric behavior, showing typical relaxor behavior. The relaxation processes are described by the Cole–Cole model [ K. S. Cole and R. H. Cole, J. Chem. Phys. 9, 341 (1941) ]. At temperatures below 490 K, the dielectric relaxation is associated to the relaxorlike ferroelectric behavior, resulting from the inhomogeneous distribution of barium due to its preference for the bismuth site. Above that, the interaction between the dipoles, which form the microdomains above the relaxor ferroelectric peak and the electrons, which are due to the ionization of the oxygen vacancies are discussed as the probable origin of the relaxation.
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77.22.Gm Dielectric loss and relaxation
77.80.Dj Domain structure; hysteresis
61.72.jd Vacancies

Atomic layer deposition of ZrO2/La2O3 high-k dielectrics on germanium reaching 0.5 nm equivalent oxide thickness

S. Abermann, O. Bethge, C. Henkel, and E. Bertagnolli

Appl. Phys. Lett. 94, 262904 (2009); http://dx.doi.org/10.1063/1.3173199 (3 pages) | Cited 14 times

Online Publication Date: 2 July 2009

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We investigate ultrathin ZrO2/La2O3 high-k dielectric stacks on germanium grown by atomic layer deposition. La2O3 is deposited from tris(N,N′-diisopropylformamidinate)-lanthanum and oxygen. Interfacial layer-free oxide stacks with a relative dielectric constant of 21 and equivalent oxide thickness values as low as 0.5 nm are obtained. Metal oxide semiconductor capacitors with platinum as the gate electrode exhibit well-behaved capacitance-voltage characteristics, gate leakage current densities in the range of 0.01–1 A/cm2, and interface trap densities in the range of ∼ 3×1012 eV−1 cm−2.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.22.Ch Permittivity (dielectric function)
77.55.-g Dielectric thin films
84.32.Tt Capacitors
85.30.Tv Field effect devices
81.05.Cy Elemental semiconductors
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