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29 Jun 2009

Volume 94, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 94, 263501 (2009); http://dx.doi.org/10.1063/1.3136905 (3 pages)

Changxin Chen, Wei Zhang, Eric Siu-Wai Kong, and Yafei Zhang
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Diamond Schottky-pn diode with high forward current density and fast switching operation

Toshiharu Makino, Satoshi Tanimoto, Yusuke Hayashi, Hiromitsu Kato, Norio Tokuda, Masahiko Ogura, Daisuke Takeuchi, Kazuhiro Oyama, Hiromichi Ohashi, Hideyo Okushi, and Satoshi Yamasaki

Appl. Phys. Lett. 94, 262101 (2009); http://dx.doi.org/10.1063/1.3159837 (3 pages) | Cited 2 times

Online Publication Date: 29 June 2009

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We fabricated a diamond diode, namely a Schottky-pn diode (SPND), which is composed of a fully depleted n-type active layer sandwiched between a highly doped p-type layer and a Schottky metal layer. The SPND has superior characteristics that overcome the weak points of both a Schottky barrier diode and a pn diode. That is, the SPND showed high current density (over 4000 A/cm2) with low specific resistance (0.4 mΩ cm2) at a forward bias of 6 V while maintaining a high rectification ratio of ∼ 1010. Moreover, the SPND showed extremely fast turn-off speed of nanosecond order.
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85.30.Kk Junction diodes
73.40.Ei Rectification

Design of electron wave filters in monolayer graphene by tunable transmission gap

Xi Chen and Jia-Wei Tao

Appl. Phys. Lett. 94, 262102 (2009); http://dx.doi.org/10.1063/1.3168527 (3 pages) | Cited 25 times

Online Publication Date: 29 June 2009

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We have investigated the transmission in monolayer graphene barrier at nonzero angle of incidence. Taking the influence of parallel wave vector into account, the transmission as the function of incidence energy has a gap due to the evanescent waves in two cases of Klein tunneling and classical motion. The modulation of the transmission gap by the incidence angle, the height, and width of potential barrier may lead to potential applications in graphene-based electronic devices.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Gk Tunneling

Rectification of spin-bias-induced charge currents

Feng Zhai, Xiaofang Zhao, and H. Q. Xu

Appl. Phys. Lett. 94, 262103 (2009); http://dx.doi.org/10.1063/1.3162304 (3 pages) | Cited 2 times

Online Publication Date: 29 June 2009

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When a spin bias is applied to a two-terminal device, a charge current will be generated. We demonstrate the rectification of such a current by studying spin-dependent transport through a quantum point contact (QPC) modulated by a spin-orbit interaction. When the polarization orientation of the spin bias (which is the spin-quantization axis) is along the transverse direction of the QPC, the two spin-conserved transmissions show a distinct variation with the incident energy. As a result, the charge current can turn from zero to a remarkable value by switching the spin bias from one lead to the other lead.
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73.40.Ei Rectification
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
73.23.-b Electronic transport in mesoscopic systems

Ultrafast release and capture of carriers in InGaAs/GaAs quantum dots observed by time-resolved terahertz spectroscopy

H. P. Porte, P. Uhd Jepsen, N. Daghestani, E. U. Rafailov, and D. Turchinovich

Appl. Phys. Lett. 94, 262104 (2009); http://dx.doi.org/10.1063/1.3158958 (3 pages) | Cited 12 times

Online Publication Date: 29 June 2009

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We observe ultrafast release and capture of charge carriers in InGaAs/GaAs quantum dots in a room-temperature optical pump-terahertz probe experiment sensitive to the population dynamics of conducting states. In case of resonant excitation of the quantum dot ground state, the maximum conductivity is achieved at approximately 35 ps after photoexcitation, which is assigned to release of carriers from the quantum dots. When exciting carriers into the conduction band of the barriers, depletion of the conductivity via carrier capture into the quantum dots with a few picosecond pump fluence-dependent time constant was observed.
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73.63.Kv Quantum dots
78.67.Hc Quantum dots
78.70.Gq Microwave and radio-frequency interactions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.21.La Quantum dots
78.47.D- Time resolved spectroscopy (>1 psec)

Enhancement of field emission of the ZnO film by the reduced work function and the increased conductivity via hydrogen plasma treatment

J. B. You, X. W. Zhang, P. F. Cai, J. J. Dong, Y. Gao, Z. G. Yin, N. F. Chen, R. Z. Wang, and H. Yan

Appl. Phys. Lett. 94, 262105 (2009); http://dx.doi.org/10.1063/1.3167301 (3 pages) | Cited 19 times

Online Publication Date: 30 June 2009

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The ZnO films deposited by magnetron sputtering were treated by H/O plasma. It is found that the field emission (FE) characteristics of the ZnO film are considerably improved after H-plasma treatment and slightly deteriorated after O-plasma treatment. The improvement of FE characteristics is attributed to the reduced work function and the increased conductivity of the ZnO:H films. Conductive atomic force microscopy was employed to investigate the effect of the plasma treatment on the nanoscale conductivity of ZnO, these findings correlate well with the FE data and facilitate a clearer description of electron emission from the ZnO:H films.
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73.61.Ga II-VI semiconductors
81.05.Dz II-VI semiconductors
52.77.-j Plasma applications
79.70.+q Field emission, ionization, evaporation, and desorption
73.30.+y Surface double layers, Schottky barriers, and work functions
81.15.Cd Deposition by sputtering
68.37.Ps Atomic force microscopy (AFM)

Thermoelectric evaluation of the dopant density of p-type InAs

M. C. Wagener, V. Wagener, and J. R. Botha

Appl. Phys. Lett. 94, 262106 (2009); http://dx.doi.org/10.1063/1.3167822 (3 pages) | Cited 3 times

Online Publication Date: 1 July 2009

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Thermoelectric measurements were performed on p-type InAs thin films grown by metalorganic vapor phase epitaxy. The measured Seebeck coefficient displayed an anomalous temperature dependence due to the existence of a highly conductive surface inversion layer. The effect of a degenerate conduction layer has been incorporated into our analysis and revealed that the sign-reversal temperature of the Seebeck coefficient remained unaffected by the surface layer. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.
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73.50.Lw Thermoelectric effects
73.61.Ey III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.uj III-V and II-VI semiconductors

Transient charge trapping and detrapping properties of a thick SiO2/Al2O3 stack studied by short single pulse Id-Vg

Man Chang, Minseok Jo, Seungjae Jung, Joonmyoung Lee, Sanghun Jeon, and Hyunsang Hwang

Appl. Phys. Lett. 94, 262107 (2009); http://dx.doi.org/10.1063/1.3168513 (3 pages) | Cited 5 times

Online Publication Date: 1 July 2009

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The transient charge trapping and detrapping of a thick SiO2/Al2O3 gate oxide device has been evaluated by single pulse Id-Vg (PIV). During the period of a single pulse, we observed fast electron detrapping. This occurred through the gate electrode, causing a counterclockwise PIV hysteresis despite electron injections from the channel region. The hysteresis direction transitioned from counterclockwise to clockwise as a function of pulse base level and peak level. The trap energy level of Al2O3, extracted by PIV at various temperatures, was found to be in the range of 1.14–1.39 eV, indicating the Frenkel–Poole defect band.
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85.30.Tv Field effect devices
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Fq High-field and nonlinear effects
77.55.-g Dielectric thin films

Probing negative differential resistance on Si(111)-math×math-Ag surface with scanning tunneling microscopy

Weihua Wang, Aidi Zhao, Bing Wang, and J. G. Hou

Appl. Phys. Lett. 94, 262108 (2009); http://dx.doi.org/10.1063/1.3173821 (3 pages) | Cited 2 times

Online Publication Date: 2 July 2009

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We present our study on the Si(111)-math×math-Ag surface using scanning tunneling microscopy/spectroscopy. The results reveal that the well defined localized surface-state bands S2/S3 in the surface with lightly doped Si substrate play an important role in electron transport. The relative wide space charge layer beneath the surface interplays with the localized surface states, thus leading to the effect of the negative differential resistance.
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73.20.At Surface states, band structure, electron density of states
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
77.22.Jp Dielectric breakdown and space-charge effects
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