APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue

29 Jun 2009

Volume 94, Issue 26, Articles (26xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 94, 263501 (2009); http://dx.doi.org/10.1063/1.3136905 (3 pages)

Changxin Chen, Wei Zhang, Eric Siu-Wai Kong, and Yafei Zhang
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Prediction of the formation of stable periodic self-interstitial cluster chains [(I4)m,m = 1–4] in Si under biaxial strain

Robert J. Bondi, Sangheon Lee, and Gyeong S. Hwang

Appl. Phys. Lett. 94, 264101 (2009); http://dx.doi.org/10.1063/1.3160545 (3 pages) | Cited 3 times

Online Publication Date: 30 June 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Using density functional theory calculations, we examined the structure and stability of extendable self-interstitial cluster configurations (In,n = 12,16) with four-atom periodicity in crystalline silicon under biaxial strain (−4% ≤ ε ≤ 4%) on Si(100). In the absence of strain, the ground state configurations of I12 and I16 share a common structure (I12-like) with C2h symmetry and a four-atom repeating unit; however, we identified an extended configuration based on I4 (D2d symmetry) cluster aggregates [(I4)m(m = 3,4)] along 〈110〉 that is more favorable under certain magnitudes of strain. While both the I12-like and (I4)m configurations exhibit relative stabilities that are a function of both strain and orientation, the larger (I4)m orientation effect is the primary reason that these structures are preferred in both highly tensile and highly compressive environments. This suggests that I4 derivatives may participate in the growth transition of Si self-interstitial clusters in the compact-to-extended size regime (10 ≤ n ≤ 20) under strain.
Show PACS
61.72.jj Interstitials
61.66.Bi Elemental solids
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.dq Other elastic constants
61.50.Ah Theory of crystal structure, crystal symmetry; calculations and modeling

Strain relaxation of SiGe in a Si/SiGe/Si heterostructure under proton irradiation

Z. F. Di, Y. Q. Wang, M. Nastasi, G. Bisognin, M. Berti, and P. E. Thompson

Appl. Phys. Lett. 94, 264102 (2009); http://dx.doi.org/10.1063/1.3167814 (3 pages) | Cited 1 time

Online Publication Date: 1 July 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have studied the mechanisms underlying strained layer relaxation by means of point defect interaction. During high temperature (300 °C) proton irradiation, vacancies generated in the vicinity of SiGe layer migrate and accumulate within the compressively strained SiGe layer. The accumulating vacancies are stabilized by hydrogen, which diffuses from the implanted region, thus allowing the nucleation and growth of hydrogen-vacancy (V-H) complexes. The formation of V-H complexes is accompanied by gradual strain relief in SiGe layer. Since the diffusion of both vacancies and hydrogen is limited by the irradiation temperature, strain relaxation of the SiGe layer is not realized during room temperature (20 °C) proton irradiation. The study supports the idea that the compressive stress in the SiGe layer induces the indiffusion of vacancies and H, and reveals the important role of point defects in the strain relaxation of the strained SiGe layer.
Show PACS
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
61.72.jd Vacancies
61.80.Jh Ion radiation effects
71.55.-i Impurity and defect levels
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close