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29 Jun 2009

Volume 94, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 94, 263501 (2009); http://dx.doi.org/10.1063/1.3136905 (3 pages)

Changxin Chen, Wei Zhang, Eric Siu-Wai Kong, and Yafei Zhang
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Nonlinear optical infrared microscopy with chemical specificity

Eun Seong Lee and Jae Yong Lee

Appl. Phys. Lett. 94, 261101 (2009); http://dx.doi.org/10.1063/1.3167286 (3 pages) | Cited 2 times

Online Publication Date: 29 June 2009

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We demonstrate a realization of nonlinear optical infrared microscopy that is capable of chemically specific imaging with high spatial resolution. It exploits the nonlinear refraction of the target material that is thermally induced by resonantly absorbed mid-infrared radiation and probed with a short wavelength near-infrared laser beam. The O–H and C–H2 vibrational modes in a water-oil mixture sample are selectively imaged at two different midinfrared wavelengths and the spatial resolution is measured to be 1.1 μm in the condition of numerical aperture 0.5, which is not attainable with conventional infrared microscopes.
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63.50.-x Vibrational states in disordered systems
78.30.C- Liquids

In situ passivation and blue luminescence of silicon clusters using a cluster beam/H2O codeposition production method

A. Brewer and K. von Haeften

Appl. Phys. Lett. 94, 261102 (2009); http://dx.doi.org/10.1063/1.3167355 (3 pages) | Cited 8 times

Online Publication Date: 29 June 2009

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Si clusters are produced in a gas aggregation source and fly through ultrahigh vacuum onto a cold target where they are codeposited with water vapor. Melting of the ice yields immediately a suspension of nanoparticles that emits intense, nondegrading luminescence in the blue wavelength range. Spectroscopic analysis reveals a Si/SiO core-shell structure where the luminescence stems from oxygen deficient defects. The main advantage of our production method is that it yields the luminescent Si nanoparticles in one step.
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81.65.Rv Passivation
78.55.Ap Elemental semiconductors
82.70.Kj Emulsions and suspensions
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

Temperature dependences of photoluminescence and electroluminescence spectra in light-emitting diodes

Lian Li, Ping Li, Yumei Wen, Jing Wen, and Yong Zhu

Appl. Phys. Lett. 94, 261103 (2009); http://dx.doi.org/10.1063/1.3159629 (3 pages) | Cited 5 times

Online Publication Date: 29 June 2009

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The temperature influence on the luminescence characteristics of light-emitting diodes (LEDs) is investigated to reveal the connection of photoluminescence (PL) with photon absorption and electroluminescence (EL) through current injection. By inspecting the PL and EL spectra at identical injection intensities, it has been found that the normalized spectra in PL and EL exhibit obvious similarities in shape and apparent differences in spectral characteristic values. Furthermore, the differences are found to originate from the junction temperatures in diverse injection modes. The observations are conducted on AlGaInP red LED chips.
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85.60.Jb Light-emitting devices

200 mW type I GaSb-based laser diodes operating at 3 μm: Role of waveguide width

Takashi Hosoda, Gela Kipshidze, Leon Shterengas, Sergey Suchalkin, and Gregory Belenky

Appl. Phys. Lett. 94, 261104 (2009); http://dx.doi.org/10.1063/1.3159819 (3 pages) | Cited 4 times

Online Publication Date: 29 June 2009

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Laser diodes based on AlInGaAsSb/InGaAsSb heterostructures with different waveguide widths were designed and fabricated. The decrease in the waveguide width from 1470 to 470 nm led to the improvement of the device performance. Lasers with 470 nm quinternary waveguides demonstrated 200 mW continuous wave output power at room temperature.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.86.+b Optical workshop techniques
42.79.Gn Optical waveguides and couplers

Silver halide single mode fibers for broadband middle infrared stellar interferometry

T. Lewi, A. Tsun, A. Katzir, J. Kaster, and F. Fuchs

Appl. Phys. Lett. 94, 261105 (2009); http://dx.doi.org/10.1063/1.3166864 (3 pages) | Cited 4 times

Online Publication Date: 29 June 2009

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We report the demonstration of silver halide single mode fibers at λ = 7.5 μm. The fiber’s modal behavior was tested at λ = 10.6 and λ = 7.5 μm, using near field measurements. Single mode operation was observed for both wavelengths with propagation losses of ∼ 16 and ∼ 40 dB/m at λ = 10.6 and λ = 7.5 μm, respectively. A rejection ratio of ∼ 30 dB was achieved at λ = 7.5 μm for a 30 cm long fiber segment. These fibers would be particularly useful for modal filtering in the 6–20 μm band. Modal filters are essential technology elements in nulling stellar interferometry.
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95.75.Kk Interferometry

Photocurrent properties of freely suspended carbon nanotubes under uniaxial strain

S. M. Kaniber, L. Song, J. P. Kotthaus, and A. W. Holleitner

Appl. Phys. Lett. 94, 261106 (2009); http://dx.doi.org/10.1063/1.3159472 (3 pages) | Cited 4 times

Online Publication Date: 1 July 2009

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The photocurrent properties of freely suspended single-walled carbon nanotubes (CNTs) are investigated as a function of uniaxial strain. We observe that at low strain, the photocurrent signal of the CNTs increases for increasing strain, while for large strain, the signal decreases, respectively. We interpret the nonmonotonous behavior by a superposition of the influence of the uniaxial strain on the resistivity of the CNTs and the effects caused by Schottky contacts between the CNTs and the metal contacts.
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73.63.Fg Nanotubes
73.30.+y Surface double layers, Schottky barriers, and work functions

Flexible Ge-on-polyimide detectors

W. S. Ho, Y.-H. Dai, Y. Deng, C.-H. Lin, Y.-Y. Chen, C.-H. Lee, and C. W. Liu

Appl. Phys. Lett. 94, 261107 (2009); http://dx.doi.org/10.1063/1.3167300 (3 pages) | Cited 1 time

Online Publication Date: 1 July 2009

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A flexible Ge-on-polyimide photodetector is demonstrated. The single crystalline thin film of Ge was transferred on the polyimide by adhesive wafer bonding and smart-cut techniques. A simple tunneling metal-oxide-semiconductor structure is fabricated for the detector applications. Due to the transparency of the polyimide, the responsivity of the detector is sensitive to the environments. At −2 V, the photodetector on the stainless steel has responsivities of 220, 200, and 140 mA/W at wavelength of 850, 1310, and 1550 nm, respectively.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Characterization of blue-green m-plane InGaN light emitting diodes

You-Da Lin, Arpan Chakraborty, Stuart Brinkley, Hsun Chih Kuo, Thiago Melo, Kenji Fujito, James S. Speck, Steven P. DenBaars, and Shuji Nakamura

Appl. Phys. Lett. 94, 261108 (2009); http://dx.doi.org/10.1063/1.3167824 (3 pages) | Cited 26 times

Online Publication Date: 1 July 2009

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High indium content blue-green (460–520 nm) m-plane InGaN light emitting diodes (LEDs) were grown on low defect-density m-plane GaN substrates. Systematic studies were performed on packaged blue-green LED lamps by using a range of well and barrier thicknesses. Photoluminance and electroluminance peak wavelengths increased while the well width was increased from 2 to 4 nm. The highest output power was achieved for well width of 2.5 nm. The output power improved significantly with the increase in barrier thickness. Nearly blueshift-free emission was observed in all LEDs from 1–400 A/cm2 current density under pulsed operation.
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85.60.Jb Light-emitting devices
81.05.Ea III-V semiconductors
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