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29 Jun 2009

Volume 94, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 94, 263501 (2009); http://dx.doi.org/10.1063/1.3136905 (3 pages)

Changxin Chen, Wei Zhang, Eric Siu-Wai Kong, and Yafei Zhang
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Direct evidence for Sb as a Zn site impurity in ZnO

U. Wahl, J. G. Correia, T. Mendonça, and S. Decoster

Appl. Phys. Lett. 94, 261901 (2009); http://dx.doi.org/10.1063/1.3159474 (3 pages) | Cited 13 times

Online Publication Date: 29 June 2009

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The lattice location of ion implanted antimony in zinc oxide has been determined by means of β emission channeling from the radioactive 124Sb isotope. Following 30 keV implantation of 124Sb into a single-crystalline ZnO sample to a fluence of 1×1014 cm−2, the angular-dependent emission rate of β particles around several crystallographic directions was measured with a position-sensitive Si detector. The majority of Sb was found to occupy Zn sites, with the possible fraction on O sites being at maximum 5%–6%.
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61.72.uj III-V and II-VI semiconductors
71.55.Gs II-VI semiconductors
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Surface tension of heavy water under high magnetic fields

Masaaki Iino and Yuu Fujimura

Appl. Phys. Lett. 94, 261902 (2009); http://dx.doi.org/10.1063/1.3167767 (3 pages) | Cited 3 times

Online Publication Date: 29 June 2009

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The surface tension of deuterium oxide-air interface was precisely measured under magnetic fields up to 10 T. The surface tension increased by 2.37±0.14 mN/m (3.30±0.19%) at 10 T. It was found that the surface tension increased linearly with an increase in the square of the magnetic field, the proportionality constant of which showed a marked isotope effect.
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68.03.Cd Surface tension and related phenomena

Well-aligned and suspended single-walled carbon nanotube film: Directed self-assembly, patterning, and characterization

Miao Lu, Min-Woo Jang, Greg Haugstad, Stephen A. Campbell, and Tianhong Cui

Appl. Phys. Lett. 94, 261903 (2009); http://dx.doi.org/10.1063/1.3151850 (3 pages) | Cited 12 times

Online Publication Date: 29 June 2009

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Self-assembly process, patterning, and characterization of well-aligned single-walled carbon nanotube (SWNT) films are presented in this letter. The dc current in an ac dielectrophoresis of an SWNT solution was measured and used to control the self-assembly process to get an oriented, compact SWNT film 15–20 nm thick. The film was further patterned to form submicron beams by focused ion beams, or lithography and oxygen plasma etching. The Young’s modulus of the film ranged from 350 to 830 GPa. The electrical resistivity was about 8.7×10−3 Ω cm. The temperature coefficient of resistance was −1.2%/K.
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81.16.Dn Self-assembly
81.16.Rf Micro- and nanoscale pattern formation
81.16.Nd Micro- and nanolithography
52.77.Bn Etching and cleaning
81.65.Cf Surface cleaning, etching, patterning
73.63.Fg Nanotubes
62.25.-g Mechanical properties of nanoscale systems
81.07.De Nanotubes
62.20.de Elastic moduli
81.40.Jj Elasticity and anelasticity, stress-strain relations

Enhanced exciton-phonon interactions in photoluminescence of ZnO nanopencils

Cheol Hyoun Ahn, Sanjay Kumar Mohanta, Nae Eung Lee, and Hyung Koun Cho

Appl. Phys. Lett. 94, 261904 (2009); http://dx.doi.org/10.1063/1.3159829 (3 pages) | Cited 24 times

Online Publication Date: 29 June 2009

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We report enhanced exciton-phonon interactions in the photoluminescence (PL) of ZnO nanopencils compared with ZnO nanorods grown on ZnO/Si templates by thermal evaporation. Although the low temperature (<100 K) PL spectra of ZnO nanorods and nanopencils were dominated by the strong donor-bound exciton, the PL spectra at elevated temperatures (>100 K) showed dominant contributions from the free exciton emissions and phonon-replicas of free excitons for nanorods and nanopencils, respectively. This discrepancy in the behaviors of excitonic emissions of the ZnO nanorods and nanopencils was related to surface defects causing different strengths of exciton-phonon coupling. The different excitonic emissions of the nanorods and nanopencils revealed a 52 meV redshift in the room temperature PL of nanopencils.
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63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
78.55.Et II-VI semiconductors
71.35.-y Excitons and related phenomena
78.66.Hf II-VI semiconductors
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Light polarization control in strain-engineered GaAsN/GaAsN:H heterostructures

R. Trotta, A. Polimeni, M. Capizzi, F. Martelli, S. Rubini, M. Francardi, A. Gerardino, and L. Mariucci

Appl. Phys. Lett. 94, 261905 (2009); http://dx.doi.org/10.1063/1.3157838 (3 pages) | Cited 8 times

Online Publication Date: 29 June 2009

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The expansion of the GaAsN lattice following hydrogen incorporation is spatially patterned so as to generate an anisotropic stress in the sample growth plane. The resulting in-plane symmetry breaking determines an in-plane polarization dependence of the light emitted along the crystal growth direction in agreement with optical selection rules and strain field calculations.
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78.66.Fd III-V semiconductors
68.60.Bs Mechanical and acoustical properties

Effects of phase transition on the hardness of shape memory alloys

Guozheng Kang and Wenyi Yan

Appl. Phys. Lett. 94, 261906 (2009); http://dx.doi.org/10.1063/1.3160740 (3 pages) | Cited 2 times

Online Publication Date: 29 June 2009

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Based on the dimensional analysis and finite element calculations, the effects of phase transition on the hardness of shape memory alloys were unveiled. It is shown that the hardness of shape memory alloys increases with the increase in the phase transition stress, the increase in the plastic yield stress, and the decrease in the maximum transition strain. However, the ratio of the hardness to the phase transition stress or the ratio of the hardness to the plastic yield stress is not a constant and therefore, the hardness of shape memory alloys cannot be treated as a material property.
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81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.Qp Friction, tribology, and hardness
62.20.fg Shape-memory effect; yield stress; superelasticity
81.40.Lm Deformation, plasticity, and creep
64.70.kd Metals and alloys
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Self-assembled bioinspired quantum dots: Optical properties

N. Amdursky, M. Molotskii, E. Gazit, and G. Rosenman

Appl. Phys. Lett. 94, 261907 (2009); http://dx.doi.org/10.1063/1.3167354 (3 pages) | Cited 15 times

Online Publication Date: 2 July 2009

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Until now, the wide research field of quantum dots (QDs) focused on inorganic structures. In the present study, we report on quantum confinement phenomena found in peptide nanocrystalline regions formed within self-assembly peptide nanospheres. These bioinspired nanostructures exhibit the optical absorption characteristics of QDs with pronounced luminescence of excitons whose origin is at the UV region. Theoretical estimations based on experimental data show that the radius of the self assembled peptide QDs is 1.3 nm.
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78.67.Hc Quantum dots
73.21.La Quantum dots
81.16.Dn Self-assembly
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
71.35.-y Excitons and related phenomena
78.55.-m Photoluminescence, properties and materials

On the lateral crystal growth of laser irradiated NiTi thin films

A. J. Birnbaum, Y. Lawrence Yao, U.-J. Chung, James. S. Im, X. Huang, and A. G. Ramirez

Appl. Phys. Lett. 94, 261908 (2009); http://dx.doi.org/10.1063/1.3138782 (3 pages) | Cited 3 times

Online Publication Date: 2 July 2009

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This letter demonstrates the ability to induce laterally grown, large-aspect crystals via pulsed, melt-mediated laser crystallization in NiTi thin films. Sputter-deposited 200 nm NiTi films were pulse irradiated utilizing a homogenized 308 nm excimer beam over a series of varying incident laser energy densities. Solidification occurred via two distinct pathways: nucleation and growth occurred away from the boundary of irradiation, while lateral growth of unmelted seeds into the undercooled melt developed at the boundary of irradiation. The potential for exploiting this technique to produce rolling direction texture for anisotropic properties is also discussed.
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68.55.A- Nucleation and growth
81.15.Cd Deposition by sputtering
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
64.70.dg Crystallization of specific substances
42.62.-b Laser applications

A comparison of the ideal strength between L12Co3(Al,W) and Ni3Al under tension and shear from first-principles calculations

Yun-Jiang Wang and Chong-Yu Wang

Appl. Phys. Lett. 94, 261909 (2009); http://dx.doi.org/10.1063/1.3170752 (3 pages) | Cited 9 times

Online Publication Date: 2 July 2009

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The ideal strengths of L12Co3(Al,W) in comparison with Ni3Al are investigated using the first-principles method. Results for the stress-strain relationships, ideal tensile and shear strengths are presented. The calculated elastic properties agree well with the experimental observations. Co3(Al,W) is found to have larger moduli and higher strengths, but less ductile than Ni3Al. The electronic structures indicate the directional covalentlike Co–W bonding through d-d hybridization is the origin of excellent mechanical properties of Co3(Al,W).
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81.40.Lm Deformation, plasticity, and creep
62.20.fk Ductility, malleability
81.40.Jj Elasticity and anelasticity, stress-strain relations
71.20.Be Transition metals and alloys
71.15.-m Methods of electronic structure calculations
62.20.de Elastic moduli
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