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12 Jan 2009

Volume 94, Issue 2, Articles (02xxxx)

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Appl. Phys. Lett. 94, 022101 (2009); http://dx.doi.org/10.1063/1.3065067 (3 pages)

Hong Li and Qing Zhang
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Growth and characterization of stable SrO-terminated SrTiO3 surfaces

M. Radovic, N. Lampis, F. Miletto Granozio, P. Perna, Z. Ristic, M. Salluzzo, C. M. Schlepütz, and U. Scotti di Uccio

Appl. Phys. Lett. 94, 022901 (2009); http://dx.doi.org/10.1063/1.3052606 (3 pages) | Cited 9 times

Online Publication Date: 12 January 2009

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A simple technique for the growth of SrO-terminated SrTiO3 surfaces is reported. High quality SrTiO3 epitaxial films were grown by reflection high energy electron diffraction assisted pulsed laser deposition on suitably prepared NdGaO3 (110) substrates. The surface properties, analyzed within a growth/characterization multichamber ultrahigh vacuum system by photoemission spectroscopy performed on the core-level spectra of Sr and Ti, low energy electron diffraction-, scanning tunneling-, and atomic force microscopy, are fully consistent with a single Sr oxide termination. The availability of such high quality SrO-terminated SrTiO3 surfaces is of major importance for the controlled growth of oxide epilayers and interfaces.
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68.55.A- Nucleation and growth
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
81.15.Fg Pulsed laser ablation deposition
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

Energy levels of oxygen vacancies in BiFeO3 by screened exchange

S. J. Clark and J. Robertson

Appl. Phys. Lett. 94, 022902 (2009); http://dx.doi.org/10.1063/1.3070532 (3 pages) | Cited 23 times

Online Publication Date: 13 January 2009

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The oxygen vacancy in BiFeO3 is calculated to be a double donor with states 0.6 eV below the conduction band edge, consistent with cathodoluminescence and electronic conductivity data. The atomic configurations were relaxed using the local density approximation plus Hubbard U (LDA+U) to the electron-correlation energy for each defect charge state to ensure that the oxide had a nonzero band gap. The defect formation energies were calculated using the screened exchange (sX) functional.
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71.20.Ps Other inorganic compounds
61.72.jd Vacancies
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
78.60.Hk Cathodoluminescence, ionoluminescence
75.80.+q Magnetomechanical effects, magnetostriction
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

Effects of barium incorporation into HfO2 gate dielectrics on reduction in charged defects: First-principles study

Naoto Umezawa

Appl. Phys. Lett. 94, 022903 (2009); http://dx.doi.org/10.1063/1.3070534 (3 pages) | Cited 4 times

Online Publication Date: 13 January 2009

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Reducing the number of charged defects in the gate insulating oxides is an essential task to improve the electrical properties of field-effect transistors. Our comprehensive study using first-principles calculations revealed that incorporating Ba atoms into HfO2 can markedly decrease the number of positive charges associated with oxygen vacancies (VO). This is attributed to the strong coupling of a Ba atom substituted for Hf (BaHf) with VO, rendering the complex defect BaHfVO stable in the charge-neutral state.
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61.72.up Other materials
61.72.jd Vacancies
73.61.Ng Insulators
77.55.-g Dielectric thin films

Magnesium oxide nanowires synthesized by pulsed liquid-injection metal organic chemical vapor deposition

Y. F. Lai, P. Chaudouët, F. Charlot, I. Matko, and C. Dubourdieu

Appl. Phys. Lett. 94, 022904 (2009); http://dx.doi.org/10.1063/1.3064134 (3 pages) | Cited 2 times

Online Publication Date: 14 January 2009

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Vertically aligned MgO nanowires were epitaxially grown at 600 °C on Au-coated MgO (001) substrates by metal organic chemical vapor deposition using Mg(tmhd)2 precursor. Discrete Au particles were embedded in the wires and distributed along the central axis. Scanning and transmission electron microscopy show that the orientation, diameter, and length of the wires strongly depend on the processing conditions such as oxygen partial pressure and reactive species flow rate as well as the starting Au thickness. Diameters down to 15–20 nm were obtained. The growth can be switched from vertical to horizontal wires by decreasing the period at which reactants are supplied.
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81.07.Bc Nanocrystalline materials
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Characteristics of output voltage and current of integrated nanogenerators

Rusen Yang, Yong Qin, Cheng Li, Liming Dai, and Zhong Lin Wang

Appl. Phys. Lett. 94, 022905 (2009); http://dx.doi.org/10.1063/1.3072362 (3 pages) | Cited 19 times

Online Publication Date: 15 January 2009

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Owing to the anisotropic property and small output signals of the piezoelectric nanogenerators (NGs) and the influence of the measurement system and environment, identification of the true signal generated by the NG is critical. We have developed three criteria: Schottky behavior test, switching-polarity tests, and linear superposition of current and voltage tests. The 11 tests can effectively rule out the system artifacts, whose sign does not change with the switching measurement polarity, and random signals, which might change signs but cannot consistently add up or cancel out under designed connection configurations. This study establishes the standards for designing and scale up of integrated nanogenerators.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
85.35.-p Nanoelectronic devices
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Interfacial reactions and resistive switching behaviors of metal/NiO/metal structures

S. H. Phark, R. Jung, Y. J. Chang, T. W. Noh, and D.-W. Kim

Appl. Phys. Lett. 94, 022906 (2009); http://dx.doi.org/10.1063/1.3072800 (3 pages) | Cited 7 times

Online Publication Date: 15 January 2009

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Ag/NiO/Pt structures did (did not) exhibit reproducible resistive switching when a positive bias was applied to the Pt (Ag) electrode. X-ray photoemission spectra revealed that ultrathin NiO films on Pt (Ag) layers did (did not) undergo reversible chemical state change during heat treatment in a vacuum and oxygen ambient. Such differences in interfacial chemical interaction may affect filament formation and rupture processes near the electrode and hence alter the resistive switching behaviors.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
73.40.Rw Metal-insulator-metal structures
79.60.Jv Interfaces; heterostructures; nanostructures
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Dielectric dispersion of BiFeO3 thin film over a broad frequency range (100 Hz–10 GHz)

Xiao-Yu Zhang, Qing Song, Feng Xu, and C. K. Ong

Appl. Phys. Lett. 94, 022907 (2009); http://dx.doi.org/10.1063/1.3062857 (3 pages) | Cited 16 times

Online Publication Date: 16 January 2009

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The dielectric properties of single-phase BiFeO3 (BFO) thin films were investigated based on parallel-plate electrode (PPE) and coplanar interdigital electrode (CIE) configurations across a wide frequency range of 100 Hz–10 GHz. The dielectric dispersion in the PPE configuration, caused by the interfacial polarization in film/electrode interfaces, exhibited a strong dependence on frequency. In the CIE configuration, the low dielectric dispersion, high permittivity, and low dielectric loss indicated that interfacial polarization was substantially suppressed, revealing the dielectric properties of BFO film. Analysis of its electrical behavior demonstrated that Poole–Frenkel emission dominated the leakage current mechanism in the symmetric electrode structure.
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77.22.Ch Permittivity (dielectric function)
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
77.22.Gm Dielectric loss and relaxation
72.20.Ht High-field and nonlinear effects
73.50.Fq High-field and nonlinear effects

Effects of Fe, Ti, and V doping on the microstructure and electrical properties of grain and grain boundary of giant dielectric NiO-based ceramics

Prasit Thongbai, Sarawut Pongha, Teerapon Yamwong, and Santi Maensiri

Appl. Phys. Lett. 94, 022908 (2009); http://dx.doi.org/10.1063/1.3072356 (3 pages) | Cited 4 times

Online Publication Date: 16 January 2009

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We report the giant dielectric response and electrical properties of Li0.05B0.02Ni0.93O (B = Fe, Ti, and V) ceramics prepared by a polymer pyrolysis route. The giant dielectric response in these materials can be ascribed based on the Maxwell–Wagner polarization and thermally activated mechanisms. It is found that Fe, Ti, and V doping has a strong effect on the microstructure and the conduction of grains and grain boundaries of these NiO-based ceramic systems, which make large contribution to their dielectric properties.
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61.72.up Other materials
61.72.Mm Grain and twin boundaries
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)
72.80.Sk Insulators
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
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