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Applied Physics Letters / Volume 94 / Issue 3 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 94, 032102 (2009); http://dx.doi.org/10.1063/1.3073752 (3 pages)

Spin injection studies into GaAs quantum wells in the presence of confined electrons

M. Yasar1, R. Mallory1, A. Petrou1, A. T. Hanbicki2, G. Kioseoglou2,3, C. H. Li2, O. M. J. van’t Erve2, and B. T. Jonker2

1Department of Physics, 239 Fronczak Hall, SUNY at Buffalo, Buffalo, New York 14260, USA
2Naval Research Laboratory, Washington, District of Columbia 20375, USA
3Department of Materials Science and Technology, University of Crete, Heraklion Crete 71003, Greece

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(Received 1 December 2008; accepted 3 January 2009; published online 23 January 2009)

We compare the electroluminescence spectra (spectral composition and polarization characteristics) of two types of Fe-based AlGaAs/GaAs n-i-p spin light emitting diodes (spin LEDs). In type A spin LEDs the GaAs quantum well (QW) does not contain any confined carriers, while in type B LEDs the GaAs QW is occupied by confined electrons generated by excess n-type doping in the AlGaAs(n) barrier. Type B LEDs show a significantly smaller circular polarization at the e1h1 feature than type A devices. Other differences include the presence of the e1ℓ1 exciton as well as excitonic phonon replicas in type B LEDs. Possible mechanisms for these differences are discussed.

© 2009 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, electroluminescence, gallium arsenide, III-V semiconductors, iron, light emitting diodes, phonon-exciton interactions, polarisation, semiconductor doping, semiconductor quantum wells, spin polarised transport

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3073752

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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