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2 Feb 2009

Volume 94, Issue 5, Articles (05xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 94, 059901 (2009); http://dx.doi.org/10.1063/1.3086725 (3 pages)

Yuta Tsukada, Tsuyoshi Honma, and Takayuki Komatsu
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Ferroelectric properties of Pb(Zr,Ti)O3 thin films until 40 GHz

E. Defaÿ, T. Lacrevaz, T. T. Vo, V. Sbrugnera, C. Bermond, M. Aïd, and B. Fléchet

Appl. Phys. Lett. 94, 052901 (2009); http://dx.doi.org/10.1063/1.3072348 (3 pages) | Cited 2 times

Online Publication Date: 2 February 2009

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The radio frequency characterization of Cu/TiN/Pb(Zr,Ti)O3 stack on glass is performed using coplanar transmission lines. A dielectric relaxation is evidenced around 10 GHz by the correlated decrease in the dielectric constant K together with the dielectric losses increase versus frequency. This phenomenon is attributed to domain wall relaxation. The ferroelectric nature of Pb(Zr,Ti)O3 (PZT) thin films is observed until 40 GHz with a hysteresis curve of K versus dc bias. The high K value (K ∼ 1200) combined with a high tunability ( ∼ 35%) and moderate losses ( ∼ 1%) suggest that PZT films could be well suited for tunable devices for frequencies lower than 5 GHz.
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77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

The effect of stress on the dielectric and tunable properties of barium stannate titanate thin films

Sannian Song, Jiwei Zhai, Lina Gao, and Xi Yao

Appl. Phys. Lett. 94, 052902 (2009); http://dx.doi.org/10.1063/1.3073743 (3 pages) | Cited 7 times

Online Publication Date: 2 February 2009

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Ba(Sn0.15Ti0.85)O3 thin films were grown on the LaNiO3 buffered LaAlO3, SrTiO3, MgO, and Al2O3 single crystal substrates, respectively. These substrates provide a systematic change in the stress while maintaining the same film microstructure. The stress in the thin film induces an obvious change in the dielectric behavior. The reduction in the ferroelectric transition temperature with increasing biaxial tensile stress is attributed to the suppression of in-plane polarization due to the small lateral grain size in the films. The in-plane tensile stress in this study reduces the unit cell along electric field in the parallel plate capacitor structure and decreases the tunability.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
77.65.Ly Strain-induced piezoelectric fields
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization

Phonon anomalies in Pb1−xLax(Zr0.9Ti0.1)O3 ceramics

E. Buixaderas, I. Gregora, S. Kamba, P. Kužel, and I. Reaney

Appl. Phys. Lett. 94, 052903 (2009); http://dx.doi.org/10.1063/1.3077019 (3 pages) | Cited 2 times

Online Publication Date: 3 February 2009

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The lattice dynamics of Pb1−xLax(Zr0.9Ti0.1)O3 (PLZT X/90/10) with X = 0, 2, 4, 10% of La was studied by means of Far Infrared, Raman and terahertz spectroscopies in the temperature range of 20–800 K. Infrared active soft phonons with anomalies near the paraelectric-ferroelectric phase transition were found for all the samples. Some Raman active phonons show anomalies ∼ 200 K below TC, due to another phase transition to a ferroelectric state with doubled unit cell. Samples with higher La content (X = 4,10) display nonclassical phonon softening described by ω2 = a(T−TC)γ with γ = 2/3.
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63.20.D- Phonon states and bands, normal modes, and phonon dispersion
78.30.Hv Other nonmetallic inorganics
77.80.B- Phase transitions and Curie point
78.70.Gq Microwave and radio-frequency interactions

Phase transitions and the temperature dependence of the dielectric properties in tetragonally strained barium strontium titanate films

L. M. B. Alldredge, Wontae Chang, Steven W. Kirchoefer, and Jeffrey M. Pond

Appl. Phys. Lett. 94, 052904 (2009); http://dx.doi.org/10.1063/1.3079093 (3 pages) | Cited 5 times

Online Publication Date: 5 February 2009

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The dielectric properties of sputter-deposited Ba1−xSrxTiO3 (BST) thin films on (001) MgO substrates with in-plane or out-of-plane tetragonal lattice structure distortions were characterized as a function of temperature. A temperature-dependent interpolation calibration technique was developed for increased efficiency of the microwave measurements. The BST films showed significant differences in the ferroelectric phase transition due to lattice distortions with a strong temperature dependence of the in-plane dielectric behavior for films under tensile strain and a weak temperature dependence for films under compressive strain. The experimental data agreed well with theoretical modeling of the BST film strain effect based on Devonshire’s theory.
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77.80.B- Phase transitions and Curie point
77.55.-g Dielectric thin films
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
77.22.Ch Permittivity (dielectric function)
81.15.Cd Deposition by sputtering
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity

Measuring the relative permittivity of polyetherimide/(Ba0.8Sr0.2)(Ti0.9Zr0.1)O3 composites from 10 kHz to 12 GHz

Cheng-Fu Yang, Chia-Ching Wu, Ying-Chung Chen, and Chean-Cheng Su

Appl. Phys. Lett. 94, 052905 (2009); http://dx.doi.org/10.1063/1.3078285 (3 pages) | Cited 3 times

Online Publication Date: 6 February 2009

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The relative permittivity of polyetherimide-(Ba0.8Sr0.2)(Ti0.9Zr0.1)O3 (PEI-BSTZ) composites is measured from 10 kHz to 1 MHz using plate method. As the content of BSTZ filler is less than 18 vol %, the experimental values are fitted to the values predicted by Lichtenecker equation. As the content is more than 18 vol %, the measured relative permittivity of PEI-BSTZ composites is higher than the predicted values. The relative permittivity of PEI-BSTZ composites is measured at 1–12 GHz using “square cavity resonator” method. Measured at gigahertz, the relative permittivity of PEI-BSTZ composites is almost unchanged.
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77.22.Ch Permittivity (dielectric function)

Domain structure of (100)/(001)-oriented epitaxial PbTiO3 thick films with various volume fraction of (001) orientation grown by metal organic chemical vapor deposition

Satoru Utsugi, Takashi Fujisawa, Rikyu Ikariyama, Shintaro Yasui, Hiroshi Nakaki, Tomoaki Yamada, Mutsuo Ishikawa, Masaaki Matsushima, Hitoshi Morioka, and Hiroshi Funakubo

Appl. Phys. Lett. 94, 052906 (2009); http://dx.doi.org/10.1063/1.3078400 (3 pages) | Cited 9 times

Online Publication Date: 6 February 2009

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(100)/(001)-oriented epitaxial PbTiO3 films thicker than 1 μm were grown on various types of substrates by chemical vapor deposition. The domain structures of these films with different volume fractions of (001) were investigated. Domain structures, consisting of (100)/(001)-oriented domains, were observed regardless of the type of substrate. However, the tilting angles of the a- and c-domains from the surface normal linearly changed with the volume fraction of the (001) orientation. These results suggest that the volume fraction of the (001) orientation is crucial in identifying the domain structure of PbTiO3 thick films.
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77.80.Dj Domain structure; hysteresis
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.at Other materials
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

Fast discharge speed in poly(vinylidene fluoride) graft copolymer dielectric films achieved by confined ferroelectricity

Fangxiao Guan, Zhongzhe Yuan, Essay W. Shu, and Lei Zhu

Appl. Phys. Lett. 94, 052907 (2009); http://dx.doi.org/10.1063/1.3079332 (3 pages) | Cited 15 times

Online Publication Date: 6 February 2009

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Although a high electric energy density was recently reported for defect-modified poly(vinylidene fluoride) (PVDF) copolymers at millisecond discharge, they usually deliver less energy at a high pulse rate. In this letter, a low loss polystyrene (PS) was grafted as side chains onto the P(VDF-chlorotrifluoroethylene) main chain. After PVDF crystallization, dielectric PS side chains were segregated to the crystalline-amorphous interface, forming a finite confinement layer for ferroelectric PVDF crystals. We speculated that less space charge was induced during electric poling because of the nanoscale confinement effect. Consequently, a fast discharge speed and a relatively high energy density were achieved.
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77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ej Polarization and depolarization
77.22.Jp Dielectric breakdown and space-charge effects
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