APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

2 Feb 2009

Volume 94, Issue 5, Articles (05xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 94, 059901 (2009); http://dx.doi.org/10.1063/1.3086725 (3 pages)

Yuta Tsukada, Tsuyoshi Honma, and Takayuki Komatsu
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds
FREE

The role of aluminum oxide buffer layer in organic spin-valves performance

Y. Q. Zhan, X. J. Liu, E. Carlegrim, F. H. Li, I. Bergenti, P. Graziosi, V. Dediu, and M. Fahlman

Appl. Phys. Lett. 94, 053301 (2009); http://dx.doi.org/10.1063/1.3078274 (3 pages) | Cited 18 times

Online Publication Date: 2 February 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The electronic structures of the 8-hydroxyquinoline-aluminum (Alq3)/Al2O3/Co interfaces were studied by photoelectron spectroscopy. A strong interface dipole was observed, which leads to a reduction in the electron injection barrier. The x-ray photoelectron spectroscopy spectra further indicate that the Al2O3 buffer layer prevents the chemical interaction between Alq3 molecules and Co atoms. X-ray magnetic circular dichroism results demonstrate that a Co layer deposited on an Al2O3 buffered Alq3 layer shows better magnetic ordering in the interface region than directly deposited Co, which suggests a better performance of spin valves with such a buffer layer. This is consistent with the recent results from [ Dediu et al., Phys. Rev. B 78, 115203 (2008) ].
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
79.60.Jv Interfaces; heterostructures; nanostructures
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
75.50.Cc Other ferromagnetic metals and alloys
78.20.Ls Magneto-optical effects
FREE

High-performance photorefractive organic glass based on diphenylhydrazone

Chil-Sung Choi, In Kyu Moon, and Nakjoong Kim

Appl. Phys. Lett. 94, 053302 (2009); http://dx.doi.org/10.1063/1.3077156 (3 pages) | Cited 5 times

Online Publication Date: 5 February 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A multifunctional molecule that possesses photoconductive and electro-optic properties in one molecule was synthesized as a photorefractive organic glass. Diphenylhydrazone as a photoconductive moiety was covalently bound to the enamine derivative as an electro-optic chromophore via a flexible ester link. The sample prepared from a mixture of the multifunctional molecule (99 wt %) and fullerene C60 (1 wt %) showed good photorefractive properties. The 100 μm thick film showed a maximum diffraction efficiency of 69% at a low applied field of 25 V/μm, corresponding to a refractive index modulation (Δn) of 1.50×10−3 and a photoconductivity of 0.46 pS/cm.
Show PACS
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.66.Qn Polymers; organic compounds
42.70.Gi Light-sensitive materials
42.70.Jk Polymers and organics
42.70.Ce Glasses, quartz
72.40.+w Photoconduction and photovoltaic effects
FREE

Stable complementary inverters with organic field-effect transistors on Cytop fluoropolymer gate dielectric

M. P. Walser, W. L. Kalb, T. Mathis, T. J. Brenner, and B. Batlogg

Appl. Phys. Lett. 94, 053303 (2009); http://dx.doi.org/10.1063/1.3077192 (3 pages) | Cited 33 times

Online Publication Date: 5 February 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present results on small-molecule p- and n-type organic semiconductors in combination with the highly water repellent fluoropolymer Cytop™ as the gate dielectric. Using pentacene and N,N′-ditridecylperylene-3,4,9,10-tetracarboxylicdiimide (PTCDI-C13), we fabricated complementary inverters of high electrical quality and stability that are almost unaffected by repeated gate bias stress. The combined p- and n-type field-effect transistors show nearly ideal characteristics, very small hysteresis, and similar saturation mobility ( ∼ 0.2 cm2/V s). Particularly PTCDI-C13 thin-film transistors exhibit a remarkable performance in the subthreshold regime if chromium is used as contact material for electron injection: a near zero onset and a subthreshold swing as low as 0.6 V/decade.
Show PACS
85.30.Tv Field effect devices
73.61.Ph Polymers; organic compounds
72.80.Le Polymers; organic compounds (including organic semiconductors)
FREE

Direct lithographic top contacts for pentacene organic thin-film transistors

C.-C. Kuo and T. N. Jackson

Appl. Phys. Lett. 94, 053304 (2009); http://dx.doi.org/10.1063/1.3050110 (3 pages) | Cited 4 times

Online Publication Date: 6 February 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report a process to fabricate metallic source and drain contacts on pentacene thin films with channel resolution less than 10 μm. Organic thin-film transistors (OTFTs) made by this method can have field-effect mobility of 0.3 cm2/V−s. Contact resistance extracted from these OTFTs is about (5×107)–(5×108) Ω μm which is lower than that typical for bottom contact devices. Such performance in OTFTs demonstrates this method’s value for fabricating organic electronics.
Show PACS
85.30.Tv Field effect devices
FREE

Air-stable n-channel single-crystal transistors with negligible threshold gate voltage

M. Yamagishi, Y. Tominari, T. Uemura, and J. Takeya

Appl. Phys. Lett. 94, 053305 (2009); http://dx.doi.org/10.1063/1.3079397 (3 pages) | Cited 14 times

Online Publication Date: 6 February 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Single-crystal transistors of highly electron-affine organic compounds were constructed on solid dielectrics to study intrinsic constraints for the n-channel field effect in ambient atmosphere. Tetracyanoquinodimethane field-effect devices reproducibly operate with a high mobility of 0.2–0.5 cm2/V s in the air. The threshold gate voltage is negligible unlike most other air-stable n-type organic transistors reported, including polycrystal film devices of the same compound. Together with the other example of less electron-affine semiconductor crystal showing air-stable field effect but with notable threshold voltage, the result suggests that crucial in air-stable n-channel field effect is sufficient electron-affinity of the organic semiconductors.
Show PACS
85.30.Tv Field effect devices
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close