Asymmetric intermediate reflector for tandem micromorph thin film silicon solar cells

Söderström, T.; Haug, F.-J.; Niquille, X.; Terrazzoni, V.; Ballif, C.

doi:doi:10.1063/1.3079414

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The influence of interface modifier on the performance of nanostructured ZnO/polymer hybrid solar cells

We have demonstrated an improvement of photovoltaic performance based on the nanostructured ZnO/poly(3-hexylthiophene) (P3HT) hybrid through interface molecular modification on ZnO nanorod surface. By probing the carrier dynamics at ZnO/P3HT interfaces, we have found that the interfacial molecules can play the role of assisting charge separation and suppression of back recombination at interfaces, which accounts for the observed enhanced short circuit current (Jsc) and open circuit voltage (Voc...

Strain measured in a silicon-on-insulator, complementary metal-oxide-semiconductor device channel induced by embedded silicon-carbon source/drain regions

The strain imparted to 60 nm wide, silicon-on-insulator (SOI) channel regions by heteroepitaxially deposited, embedded silicon-carbon (e-SiC) features was measured using x-ray microbeam diffraction, representing one of the first direct measurements of the lattice parameter conducted in situ in an SOI device channel. Comparisons of closed-form, analytical modeling to the measured, depth-averaged strain distributions show close correspondence for the e-SiC features but 95% of the predicted strain...

The micromorph solar cell (stack of amorphous and microcrystalline cells) concept is the key for achieving high efficiency stabilized thin film silicon solar cells. We introduce a device structure that allows a better control of the light in-coupling into the two subcell components. It is based on an asymmetric intermediate reflector, which increases the effective thickness of the a-Si:H by a factor of more than three. Hence, the a-Si:H thickness reduction diminishes the light induced degradation, and micromorph tandem cells with 11.2% initial and 9.8% stabilized efficiencies (1000 h, 50 °C, and 100 mW/cm²) are made on plastic substrates with T_g<180 °C.

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KEYWORDS and PACS

Keywords

amorphous semiconductors, elemental semiconductors, semiconductor thin films, silicon, solar cells, thin film devices

PACS

84.60.Jt

Photoelectric conversion
68.55.ag

Semiconductors

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.3079414

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

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$abstract.society.value is a Member of CrossRef

American Institute of Physics

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