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9 Feb 2009

Volume 94, Issue 6, Articles (06xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 94, 062105 (2009); http://dx.doi.org/10.1063/1.3079078 (3 pages)

Ikai Lo, Chia-Ho Hsieh, Yu-Chi Hsu, Wen-Yuan Pang, and Ming-Chi Chou
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All-inorganic spin-cast nanoparticle solar cells with nonselective electrodes

I. E. Anderson, A. J. Breeze, J. D. Olson, L. Yang, Y. Sahoo, and S. A. Carter

Appl. Phys. Lett. 94, 063101 (2009); http://dx.doi.org/10.1063/1.3074368 (3 pages) | Cited 15 times

Online Publication Date: 9 February 2009

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Spin-cast all-inorganic nanoparticle solutions have been used to make a CdTe/CdSe solar cell with an efficiency of up to 2.6% using air stable electrodes and without an additional alumina layer. The type of junction as well as the nonselective nature of the electrodes of these devices are explored.
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84.60.Jt Photoelectric conversion

Size-dependent strain relaxation in InN islands grown on GaN by metalorganic chemical vapor deposition

Wen-Che Tsai, Feng-Yi Lin, Wen-Cheng Ke, Shu-Kai Lu, Shun-Jen Cheng, Wu-Ching Chou, Wei-Kuo Chen, Ming-Chih Lee, and Wen-Hao Chang

Appl. Phys. Lett. 94, 063102 (2009); http://dx.doi.org/10.1063/1.3064166 (3 pages)

Online Publication Date: 9 February 2009

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We report Raman measurements on InN islands grown on GaN by metalorganic chemical vapor deposition. The Raman frequency of the InN E2 mode is found to decrease exponentially with the island’s aspect ratio, indicating a size dependent strain relaxation during the island formation. Our results suggest that most of the strain at the InN–GaN interface have been released plastically during the initial stage of island formations. After that, the residual strain of only −3.5×10−3 is further relaxed elastically via surface islanding. The experimental data are in agreement with the strain relaxation predicted from a simplified model analysis as well as three-dimensional finite-element simulations.
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81.05.Ea III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
68.35.bg Semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Enhanced resolution and high aspect-ratio semiconductor nanopatterning by metal overcoating

Alex Hayat, Nikolai Berkovitch, and Meir Orenstein

Appl. Phys. Lett. 94, 063103 (2009); http://dx.doi.org/10.1063/1.3080207 (3 pages) | Cited 2 times

Online Publication Date: 9 February 2009

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We present a focused ion beam semiconductor nanopatterning technique enabling high resolution and high-aspect ratios. Undesired semiconductor material removal due to residual lower-intensity ion beam tails is prevented by a 20 nm slow-etch-rate TiO2 layer acting as an effective saturated-absorber dynamic mask. Resulting semiconductor features smaller than 30 nm and deeper than 350 nm correspond to aspect ratio higher than 10, while for larger features the aspect ratio can be as high as 15. The experimentally demonstrated results are in good agreement with the theoretical predictions. A transmission spectrum of a microcavity realized by this method conforms to numerical calculation results.
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81.05.Hd Other semiconductors
81.16.Rf Micro- and nanoscale pattern formation
81.65.-b Surface treatments

In situ extended x-ray absorption fine structure study of initial processes in CdSe nanocrystals formation using a microreactor

M. Uehara, Z. H. Sun, H. Oyanagi, K. Yamashita, A. Fukano, H. Nakamura, and H. Maeda

Appl. Phys. Lett. 94, 063104 (2009); http://dx.doi.org/10.1063/1.3080660 (3 pages) | Cited 5 times

Online Publication Date: 9 February 2009

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The nucleation process of CdSe nanocrystals is studied by fluorescence-detected extended x-ray absorption fine structure (EXAFS) using a microreactor and synchrotron radiation. Detailed analysis of in situ Se K-edge EXAFS data measured along a microreactor channel revealed a strong position-dependence which displays a rapid increase in the CdSe phase with time at the initial stage. The results indicate that the CdSe nucleation completes within several seconds starting from trioctylphosphine Se solution and dodecylamine surfactant at 240 °C. This shows the promising capability of in situ EXAFS combined with a microreactor to investigate the nucleation process of nanocrystals synthesized in a solvent.
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81.05.Dz II-VI semiconductors
81.16.-c Methods of micro- and nanofabrication and processing
78.70.Dm X-ray absorption spectra

Scanning probe charge reading of ferroelectric domains

Byong M. Kim, Donald E. Adams, Quan Tran, Qing Ma, and Valluri Rao

Appl. Phys. Lett. 94, 063105 (2009); http://dx.doi.org/10.1063/1.3081020 (3 pages) | Cited 1 time

Online Publication Date: 10 February 2009

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A scanning probe charge-detection technique based on direct piezoelectric effect is demonstrated to read alternating bit polarizations in a ferroelectric media The bit signal is generated by spatially modulating charges interacting with a probe tip scanning in contact with the media. A periodicity of the bits is used with an appropriate scan speed to modulate the signal frequency. A signal-to-noise ratio of 10 dB has been achieved for a contact force of 100 nN. The modulation of the bit signal frequency into the 2 kHz data rate is achieved by coupling 0.4 μm spacing between alternating polarizations with scanning speed of 1.6 mm/s.
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77.80.Dj Domain structure; hysteresis
77.55.-g Dielectric thin films
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
77.22.Ej Polarization and depolarization

Surface-enhanced fluorescence from metal sculptured thin films with application to biosensing in water

I. Abdulhalim, Alina Karabchevsky, Christian Patzig, Bernd Rauschenbach, Bodo Fuhrmann, Evgeni Eltzov, Robert Marks, Jian Xu, Fan Zhang, and Akhlesh Lakhtakia

Appl. Phys. Lett. 94, 063106 (2009); http://dx.doi.org/10.1063/1.3081031 (3 pages) | Cited 13 times

Online Publication Date: 10 February 2009

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Surface-enhanced fluorescence from porous, metallic sculptured thin films (STFs) was demonstrated for sensing of bacteria in water. Enhancement factors larger than 15 were observed using STFs made of silver, aluminum, gold, and copper with respect to their dense film counterparts. The STFs used are assemblies of tilted, shaped, parallel nanowires prepared with several variants of the oblique-angle-deposition technique. Comparison between the different films indicates that the enhancement factor is higher when the tilt is either small (<30 deg) or large (>80 deg); thus, the enhancement is higher when only a single resonance in the nanowires is excited.
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78.66.Bz Metals and metallic alloys
78.55.-m Photoluminescence, properties and materials
87.85.-d Biomedical engineering

Diffusion and interaction studied nondestructively and in real-time with depth-resolved low energy ion spectroscopy

V. I. T. A. de Rooij-Lohmann, A. W. Kleyn, F. Bijkerk, H. H. Brongersma, and A. E. Yakshin

Appl. Phys. Lett. 94, 063107 (2009); http://dx.doi.org/10.1063/1.3081034 (3 pages) | Cited 6 times

Online Publication Date: 10 February 2009

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An analysis procedure was developed that enables studying diffusion in ultrathin films by utilizing the depth-resolved information that is contained in the background of low energy ion scattering (LEIS) spectra. Using a high-sensitivity analyzer/detector combination allows for such a low ion dose that the ion-induced perturbation caused by this technique is negligible and not measurable with LEIS. The developed analysis procedure provides a unique opportunity to study diffusion processes in nanoscaled systems. It was applied to the Mo/Si system, a system that is relevant for extreme ultraviolet optics.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
66.30.H- Self-diffusion and ionic conduction in nonmetals

Formation of high density tungsten nanodots embedded in silicon nitride for nonvolatile memory application

Yanli Pei, Chengkuan Yin, Masahiko Nishijima, Toshiya Kojima, Takafumi Fukushima, Tetsu Tanaka, and Mitsumasa Koyanagi

Appl. Phys. Lett. 94, 063108 (2009); http://dx.doi.org/10.1063/1.3081042 (3 pages) | Cited 5 times

Online Publication Date: 10 February 2009

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In this letter, the formation of high density tungsten nanodots (W-NDs) embedded in silicon nitride via a self-assembled nanodot deposition is demonstrated. In this method, tungsten and silicon nitride are cosputtered in high vacuum rf sputtering equipment. The W-NDs with small diameters (1–1.5 nm) and high density ( ∼ 1.3×1013/cm2) were achieved easily by controlling W composition; this is the ratio of total area of W chips to that of silicon nitride target. The metal-oxide-semiconductor memory device was fabricated with high density W-NDs floating gate and high-k HfO2 blocking dielectric. A wide range memory window (0–29 V) was obtained after bidirectional gate voltages sweeping with range of ±1–±23 V. It is feasible to design the memory window with propriety power consumption for nonvolatile memory application.
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84.30.Sk Pulse and digital circuits

Dynamics of repulsive dual-frequency atomic force microscopy

Robert W. Stark

Appl. Phys. Lett. 94, 063109 (2009); http://dx.doi.org/10.1063/1.3080209 (3 pages) | Cited 12 times

Online Publication Date: 10 February 2009

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In bimodal atomic force microscopy, two flexural modes are driven at their resonances. The oscillation of the second eigenmode, which is usually an incommensurate multiple of the fundamental frequency, perturbs the dynamic system. Numerical simulations show that the tip motion is almost periodic at typical set points and that harmonics and intermodulation frequencies prevail in the spectrum. The simulations also predict a very small increase in the noise of the first mode amplitude and phase due to the second mode oscillation. At small average tip sample separations, however, phases with repulsive and purely attractive forces can occur intermittently.
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07.79.Lh Atomic force microscopes

Surface evolution of amorphous nanocolumns of Fe–Ni grown by oblique angle deposition

Senoy Thomas, S. H. Al-Harthi, R. V. Ramanujan, Zhao Bangchuan, Liu Yan, Wang Lan, and M. R. Anantharaman

Appl. Phys. Lett. 94, 063110 (2009); http://dx.doi.org/10.1063/1.3080615 (3 pages) | Cited 4 times

Online Publication Date: 10 February 2009

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The growth of Fe–Ni based amorphous nanocolumns has been studied using atomic force microscopy. The root mean square roughness of the film surface increased with the deposition time but showed a little change at higher deposition time. It was found that the separation between the nanostructures increased sharply during the initial stages of growth and the change was less pronounced at higher deposition time. During the initial stages of the column growth, a roughening process due to self shadowing is dominant and, as the deposition time increases, a smoothening mechanism takes place due to the surface diffusion of adatoms.
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81.05.Bx Metals, semimetals, and alloys
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.at Other materials
68.37.Ps Atomic force microscopy (AFM)
75.70.Ak Magnetic properties of monolayers and thin films
75.50.Tt Fine-particle systems; nanocrystalline materials

Fluorescence quenching of quantum dots by gold nanorods and its application to DNA detection

Xin Li, Jun Qian, Li Jiang, and Sailing He

Appl. Phys. Lett. 94, 063111 (2009); http://dx.doi.org/10.1063/1.3080662 (3 pages) | Cited 36 times

Online Publication Date: 10 February 2009

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Gold nanorods (GNRs) with different localized surface plasmon resonance (LSPR) peaks and different thicknesses of polymer-coating were synthesized to validate that the distinct GNR-based quenching process of quantum dot (QD) emission follows the metal surface energy transfer theory. The quenching efficiency is directly related to the spectral overlap of GNR-LSPR absorption and QD-emission, as well as the separation distance between the two nanoparticles. GNRs are advantageous for DNA conjugation, and the high efficiency of GNR-QD quenching system was utilized for sensitive DNA detection.
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87.85.Rs Nanotechnologies-applications
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
87.85.-d Biomedical engineering
87.15.mq Luminescence
87.14.gk DNA

Ordered Au/Pb nanoring arrays on Pb-induced Si(111)-1×1 surface

Lin Tang, Ze-Lei Guan, Dan Hao, Xu-Cun Ma, Jin-Feng Jia, and Qi-Kun Xue

Appl. Phys. Lett. 94, 063112 (2009); http://dx.doi.org/10.1063/1.3081017 (3 pages) | Cited 1 time

Online Publication Date: 11 February 2009

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Growth and morphology of Au on a homogenous Si(111)-1×1-Pb surface are investigated using scanning tunneling microscopy. The deposited Au atoms grow on the Si(111)-1×1-Pb surface in two-dimensional mode and a long-range ordered 8×8 reconstruction with ringlike structure is observed following room temperature deposition. Upon thermal annealing to 500 K, the 8×8 structure transforms into a hexagonal-ring array with a 4×4 superstructure. The mechanism for the formation of the two self-organized nanostructures is discussed in terms of interface diffusion, alloying, and energy minimization.
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81.16.Dn Self-assembly
68.35.bd Metals and alloys
61.46.-w Structure of nanoscale materials
66.30.Ny Chemical interdiffusion; diffusion barriers
66.30.Pa Diffusion in nanoscale solids
64.70.kd Metals and alloys

Rapid thermal oxidation of silicon nanowires

Sergiy Krylyuk, Albert V. Davydov, Igor Levin, Abhishek Motayed, and Mark D. Vaudin

Appl. Phys. Lett. 94, 063113 (2009); http://dx.doi.org/10.1063/1.3079395 (3 pages) | Cited 8 times

Online Publication Date: 11 February 2009

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Oxidation kinetics of silicon nanowires (SiNWs) subjected to rapid thermal oxidation (RTO) at 900 °C and 1000 °C in dry oxygen for exposure times ranging from 1 to 7.5 min is reported. For 1 min, SiNWs exhibit an enhanced oxidation rate compared to planar silicon, but for longer exposures the oxidation rates of SiNWs and planar Si are similar. Compared to furnace oxidation of SiNWs, RTO provides faster average oxidation rates and a weaker dependence of oxide shell thickness on the NW diameter. Our results demonstrate that RTO is an efficient approach for controlled oxidation of SiNWs.
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81.65.Mq Oxidation
81.16.-c Methods of micro- and nanofabrication and processing

Green magnetite (Fe3O4): Unusual optical Mie scattering and magnetic isotropy of submicron-size hollow spheres

Quan-Lin Ye, Hirofumi Yoshikawa, Shunji Bandow, and Kunio Awaga

Appl. Phys. Lett. 94, 063114 (2009); http://dx.doi.org/10.1063/1.3079407 (3 pages) | Cited 3 times

Online Publication Date: 11 February 2009

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Magnetite hollow spheres with a diameter of 650 nm and shell thickness of 40 nm exhibit an unexpected green color, in contrast with usual magnetite solids appearing black. This unusual green color is interpreted in terms of the Mie scattering on the inhomogeneous and low-density structure of the hollow spheres with a characteristic diameter that is comparable to the wavelength of the visible light. Further, thin films of the hollow spheres exhibit no two-dimensional shape anisotropy, reflecting the isotropic structure of individual particles. These results indicate the potential advantages in achieving unique physical properties through constructing hollow structures.
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78.66.Nk Insulators
78.20.Ls Magneto-optical effects
78.40.Ha Other nonmetallic inorganics
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
75.70.Ak Magnetic properties of monolayers and thin films
68.55.jd Thickness
75.50.Tt Fine-particle systems; nanocrystalline materials

Directional control of surface plasmon polariton waves propagating through an asymmetric Bragg resonator

S. B. Choi, D. J. Park, Y. K. Jeong, Y. C. Yun, M. S. Jeong, C. C. Byeon, J. H. Kang, Q.-Han Park, and D. S. Kim

Appl. Phys. Lett. 94, 063115 (2009); http://dx.doi.org/10.1063/1.3068502 (3 pages) | Cited 17 times

Online Publication Date: 11 February 2009

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We have demonstrated the directional control of surface plasmon polariton (SPP) waves propagating through an asymmetric plasmonic Bragg resonator using femtosecond temporal-phase control via the resonant coupling of SPPs and the interference of SPPs. The near-field images display significant temporal-phase dependence, switching between left and right propagation after the Bragg resonator. Our results would be a key step toward the control of surface plasmon propagation direction in nanoscaled plasmonic applications
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73.22.Lp Collective excitations
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
61.46.-w Structure of nanoscale materials

A scheme for measuring vibrational frequency and coupling strength in a coupled nanomechanical resonator-quantum dot system

Jin-Jin Li and Ka-Di Zhu

Appl. Phys. Lett. 94, 063116 (2009); http://dx.doi.org/10.1063/1.3072599 (3 pages) | Cited 5 times

Online Publication Date: 11 February 2009

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The authors theoretically propose a precise way to measure the vibrational frequency and coupling strength in a coupled nanomechanical resonator-quantum dot system in terms of mechanically induced coherent population oscillation. The pump-probe spectroscopy that exhibits new features such as mechanically induced three-photon resonance and ac Stark effect is obtained. Simultaneously, the coupling strength between nanomechanical resonator and quantum dot can also be detected from Rabi-splitting-like peak in the probe spectrum. Our results could be applied to other systems such as coupled DNA-quantum dot systems.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Realization of dual-gated Ge–SixGe1−x core-shell nanowire field effect transistors with highly doped source and drain

Junghyo Nah, E.-S. Liu, D. Shahrjerdi, K. M. Varahramyan, S. K. Banerjee, and E. Tutuc

Appl. Phys. Lett. 94, 063117 (2009); http://dx.doi.org/10.1063/1.3079410 (3 pages) | Cited 9 times

Online Publication Date: 12 February 2009

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We demonstrate dual-gated germanium (Ge)-silicon germanium (SixGe1−x) core-shell nanowire (NW) field effect transistors (FETs) with highly doped source (S) and drain (D). A high-κ HfO2 gate oxide was deposited on the NW by atomic layer deposition, followed by TaN gate metal deposition. The S and D regions of NW were then doped using low energy (3 keV) boron (B) ion implantation with a dose of 1015 cm−2. The electrical characteristics of these devices exhibit up to two orders of magnitude higher current and an improved ON/OFF current ratio by comparison to dual-gated NW FET with undoped S/D.
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85.30.Tv Field effect devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.72.U- Doping and impurity implantation
81.07.Vb Quantum wires

Surface plasmon mediated tip enhanced Raman scattering

Eugene G. Bortchagovsky, Stefan Klein, and Ulrich C. Fischer

Appl. Phys. Lett. 94, 063118 (2009); http://dx.doi.org/10.1063/1.3081416 (3 pages) | Cited 5 times

Online Publication Date: 12 February 2009

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The Raman signal can be strongly increased for molecules deposited on a thin metal film in a configuration where the emission of the Raman signal into a glass support of the film is mediated by leaky surface plasmons (SPs). Here we show that SP provides an efficient pathway to detect tip enhanced Raman scattering (TERS). Based on this result, we suggest a new edge plasmon mediated TERS configuration. Plasmon modes on metal covered edges of a dielectric tetrahedral tip couple to a highly directional beam of light into the dielectric body of the tip as a pathway for signal detection.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.30.Er Solid metals and alloys
78.66.Bz Metals and metallic alloys

Intercoupling of free-space radiation to s-polarized confined modes via nanocavities

A. Yu. Nikitin, F. J. García-Vidal, and L. Martín-Moreno

Appl. Phys. Lett. 94, 063119 (2009); http://dx.doi.org/10.1063/1.3081457 (3 pages) | Cited 3 times

Online Publication Date: 12 February 2009

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The interaction of the s-polarized waveguide mode in the dielectric layer placed on a metal film with one-dimensional indentations in the metal is studied. The efficiency of the coupling to the out-of-plane radiation is considered. It is shown that varying the parameters of the cavities, the periodical array of resonant indentations can almost totally reflect back the incident waveguide mode or, on the contrary, efficiently transform it into a narrow-directional outgoing beam. An efficient waveguide mode launcher is examined on the basis of the results for Bragg mirror. The differences and similarities between scattering of surface plasmon polaritons and waveguide modes are discussed.
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42.82.Et Waveguides, couplers, and arrays
42.79.Gn Optical waveguides and couplers
85.60.-q Optoelectronic devices

Observation of persistent photoconductance in single ZnO nanotube

Peng Liu, Guangwei She, Zhaoliang Liao, Yao Wang, Zhenzhong Wang, Wensheng Shi, Xiaohong Zhang, Shuit-Tong Lee, and Dongmin Chen

Appl. Phys. Lett. 94, 063120 (2009); http://dx.doi.org/10.1063/1.3082173 (3 pages) | Cited 9 times

Online Publication Date: 13 February 2009

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Vertically aligned ZnO nanotube fabricated on an indium tin oxide substrate is found to exhibit strong persistent photoconductivity (PPC). Excitation wavelength-dependent conductance measurement on individual ZnO nanotube reveals the presence of defect states at 240 meV above the valence band edge, which are directly associated with the PPC effect. Our observations are consistent with the hypothesis that double ionization of defect-localized states is responsible for the PPC effect.
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72.40.+w Photoconduction and photovoltaic effects
71.20.Nr Semiconductor compounds
71.55.-i Impurity and defect levels
73.22.-f Electronic structure of nanoscale materials and related systems
73.63.Fg Nanotubes
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