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16 Feb 2009

Volume 94, Issue 7, Articles (07xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 94, 073101 (2009); http://dx.doi.org/10.1063/1.3080668 (3 pages)

J. T. Muhonen, A. O. Niskanen, M. Meschke, Yu. A. Pashkin, J. S. Tsai, L. Sainiemi, S. Franssila, and J. P. Pekola
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Light scattering and Fano resonances in high-Q photonic crystal nanocavities

M. Galli, S. L. Portalupi, M. Belotti, L. C. Andreani, L. O’Faolain, and T. F. Krauss

Appl. Phys. Lett. 94, 071101 (2009); http://dx.doi.org/10.1063/1.3080683 (3 pages) | Cited 40 times

Online Publication Date: 17 February 2009

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The authors show that light scattering from high-Q planar photonic crystal nanocavities can display Fano-like resonances corresponding to the excitation of localized cavity modes. By changing the scattering conditions, we are able to tune the observed lineshapes from strongly asymmetric and dispersivelike resonances to symmetric Lorentzians. Results are interpreted according to the Fano model of quantum interference between two coupled scattering channels. Combined measurements and line shape analysis on a series of silicon L3 nanocavities as a function of nearby hole displacement demonstrate that Q factors as high as 1.1×105 can be directly measured in these structures. Furthermore, a comparison with theoretically calculated Q factors allows to extract the rms deviation of hole radii due to weak disorder of the photonic lattice.
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42.70.Qs Photonic bandgap materials
42.25.Fx Diffraction and scattering

Materializing a binary hyperlens design

Alexander V. Kildishev, Uday K. Chettiar, Zubin Jacob, Vladimir M. Shalaev, and Evgenii E. Narimanov

Appl. Phys. Lett. 94, 071102 (2009); http://dx.doi.org/10.1063/1.3081403 (3 pages) | Cited 7 times

Online Publication Date: 17 February 2009

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We present a design of cylindrical hyperlens made of a layered binary material. The design approach uses an improved effective medium theory to take account of radius-dependent effects due to curvature of material interfaces resulting in nonperiodically distributed thicknesses of the lens layers. The performance of this lens is compared versus the designs with periodically thick layers, which we showed in earlier papers. Detailed quantitative results analyzed for the lenses with the same number and starting order of layers prove better functioning of the lens designed with this approach.
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42.79.Bh Lenses, prisms and mirrors

Practical limits of absorption enhancement near metal nanoparticles

J. B. Khurgin, G. Sun, and R. A. Soref

Appl. Phys. Lett. 94, 071103 (2009); http://dx.doi.org/10.1063/1.3081631 (3 pages) | Cited 24 times

Online Publication Date: 17 February 2009

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We consider the enhanced absorption of optical radiation by molecules placed in the vicinity of spherical metal nanoparticles in the realistic situation that includes perturbation of the optical field by the absorbing molecules. We show that there is an optimal nanosphere radius that gives the strongest enhancement for each combination of the number of absorbing molecules, their absorption strength, and their distance from the nanosphere surface and that the enhancement is strong only for relatively weak and diluted absorbers.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.66.Bz Metals and metallic alloys
81.07.Bc Nanocrystalline materials
78.68.+m Optical properties of surfaces

Bistability of splay and π twist states in a chiral-doped dual frequency liquid crystal cell

I-An Yao, Chiu-Lien Yang, Chueh-Ju Chen, Jia-Pang Pang, Shih-Fu Liao, Jia-Hsin Li, and Jin-Jie Wu

Appl. Phys. Lett. 94, 071104 (2009); http://dx.doi.org/10.1063/1.3078233 (3 pages) | Cited 1 time

Online Publication Date: 17 February 2009

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A bistable liquid crystal cell with splay and π twist stable states is obtained by doping a chiral additive in a splay cell filled with dual frequency liquid crystals. The switching between the two states is achieved by using a sequential waveform of low and high frequencies. The switching mechanisms are proposed by using the backflow effect together with the anisotropic properties of dual frequency liquid crystals. As a result, the two stable states have the superior memory characteristics due to the topological inequivalence.
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61.30.-v Liquid crystals

Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm

Kuniyoshi Okamoto, Junich Kashiwagi, Taketoshi Tanaka, and Masashi Kubota

Appl. Phys. Lett. 94, 071105 (2009); http://dx.doi.org/10.1063/1.3078818 (3 pages) | Cited 73 times

Online Publication Date: 18 February 2009

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We demonstrated nonpolar m-plane InGaN multiple quantum well laser diodes (LDs) under continuous-wave (cw) operation with a lasing wavelength of 499.8 nm, which is the longest reported for GaN-based LDs. A maximum optical output power of 15 mW was achieved, with the threshold current and the corresponding threshold current density (Jth) of 46 mA and 3.1 kA/cm2, respectively. The correlation between lasing wavelength shift and electrical input power (Pin) under cw operation was investigated using LDs of which reflectivity of front facet were varied from 70% to 97%. The lasing wavelength increased with increasing Pin with a slope of 4.56 and 4.34 nm/W for 70% and 97% mirror, respectively. The result suggested that the redshift due to self-heating is more predominant than the blueshift due to band filling above Jth even at near green region for nonpolar GaN-based LDs and reduction in Pin is indispensable to improve wavelength stabilization.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Thin-film characterization by terahertz time-domain spectroscopy using grating-assisted excitation of guided modes

Y. Laamiri, F. Garet, and J.-L. Coutaz

Appl. Phys. Lett. 94, 071106 (2009); http://dx.doi.org/10.1063/1.3085996 (3 pages) | Cited 1 time

Online Publication Date: 18 February 2009

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Using a grating coupler, the guided modes of a dielectric slab can be efficiently excited by a terahertz beam delivered by a classical terahertz time-domain setup. By analyzing the variation in the transmission spectrum induced by a thin film deposited over the device, the refractive index as well as the absorption coefficient of the film material can be determined with a great accuracy because of the increased interaction length with the guided terahertz signal. The principle of such a technique is demonstrated in the case of a 7.1 μm thick film of Shipley 1828 photoresist.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
85.40.Hp Lithography, masks and pattern transfer
78.70.Gq Microwave and radio-frequency interactions

Laser frequency stabilization to excited state transitions using electromagnetically induced transparency in a cascade system

R. P. Abel, A. K. Mohapatra, M. G. Bason, J. D. Pritchard, K. J. Weatherill, U. Raitzsch, and C. S. Adams

Appl. Phys. Lett. 94, 071107 (2009); http://dx.doi.org/10.1063/1.3086305 (3 pages) | Cited 12 times

Online Publication Date: 18 February 2009

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We demonstrate laser frequency stabilization to excited state transitions using cascade electromagnetically induced transparency. Using a room temperature Rb vapor cell as a reference, we stabilize a first diode laser to the D2 transition and a second laser to a transition from the intermediate 5P3/2 state to a highly excited state with principal quantum number n = 19–70. A combined laser linewidth of 280±50 kHz over a 100 μs time period is achieved. This method may be applied generally to any cascade system and allows laser stabilization to an atomic reference in the absence of a direct absorption signal.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
32.80.-t Photoionization and excitation
42.50.Gy Effects of atomic coherence on propagation, absorption, and amplification of light; electromagnetically induced transparency and absorption

Reducing the impact of inhomogeneous broadening on quantum dot based electromagnetically induced transparency

Per Lunnemann and Jesper Mørk

Appl. Phys. Lett. 94, 071108 (2009); http://dx.doi.org/10.1063/1.3079676 (3 pages) | Cited 7 times

Online Publication Date: 18 February 2009

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Slow light based on electromagnetically induced transparency in an inhomogeneously broadened quantum dot medium is investigated theoretically. Three schemes, Ξ, V, and Λ, are compared and it is shown that the V-scheme gives a group velocity that is more than three orders of magnitude smaller compared to the Ξ- and Λ-schemes. The physical mechanisms that make the V-scheme less vulnerable to inhomogeneous broadening are analyzed and discussed.
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78.67.Hc Quantum dots
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Room temperature GaAs exciton-polariton light emitting diode

S. I. Tsintzos, P. G. Savvidis, G. Deligeorgis, Z. Hatzopoulos, and N. T. Pelekanos

Appl. Phys. Lett. 94, 071109 (2009); http://dx.doi.org/10.1063/1.3082093 (3 pages) | Cited 15 times

Online Publication Date: 18 February 2009

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Room temperature GaAs polariton emission is demonstrated under electrical injection. Temperature and angle-resolved electroluminescence measurements on a polariton light emitting diode clearly show the persistence of Rabi splitting and anticrossing behavior at temperatures as high as 315 K. We show that by increasing the number of quantum wells in the structure, the cutoff temperature for the strong coupling regime can be pushed beyond room temperature, in good agreement with theory. Our results suggest that optimally designed GaAs microcavities are perfectly suited for room temperature polaritronics.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Effects of Eu substituting positions and concentrations on luminescent, dielectric, and magnetic properties of SrTiO3 ceramics

Chunge Jiang, Liang Fang, Mingrong Shen, Fengang Zheng, and Xinglong Wu

Appl. Phys. Lett. 94, 071110 (2009); http://dx.doi.org/10.1063/1.3082097 (3 pages) | Cited 9 times

Online Publication Date: 18 February 2009

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The structural, luminescent, dielectric, and magnetic properties of multifunction Eu3+-doped SrTiO3 (STO) ceramics were investigated at room temperature. Three different charge compensation mechanisms were realized by substituting Eu ion at different sites. It was found that the multifunction properties of the samples strongly depended on the substituting positions of Eu ion. Compared with Eu substitution at Sr or Ti site samples, the photoluminescence intensities and dielectric constant of both Sr and Ti sites substituted samples were obviously enhanced, mainly ascribed to the small lattice distortion and unique charge compensation mechanism. A linear magnetization-magnetic field behavior revealed the paramagnetic nature of the Eu3+ doped STO and was sensitive to the Eu doping concentrations.
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78.55.Hx Other solid inorganic materials
77.22.Ch Permittivity (dielectric function)
61.72.up Other materials
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
75.20.Ck Nonmetals

Nonlinear prism based on the natural ferroelectric domain structure in calcium barium niobate

P. Molina, S. Álvarez-García, M. O. Ramírez, J. García-Solé, L. E. Bausá, Huaijin Zhang, Wenlan Gao, Jiyang Wang, and Minhua Jiang

Appl. Phys. Lett. 94, 071111 (2009); http://dx.doi.org/10.1063/1.3086306 (3 pages) | Cited 11 times

Online Publication Date: 19 February 2009

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We show the ability of calcium barium niobate as a nonlinear material to produce conical second harmonic generation in a broad frequency range. The nonlinear properties of this system are based on the broad sized microdomain distribution appearing naturally in the as-grown crystal. The large angular deflection obtained for conical second harmonic generation allows considering this system as a nonlinear prism with variations in the second harmonic generation angle as large as 35° in the wavelength range of 430–660 nm.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
77.80.Dj Domain structure; hysteresis

Low temperature effects on the response time of liquid crystal displays

Linghui Rao, Sebastian Gauza, and Shin-Tson Wu

Appl. Phys. Lett. 94, 071112 (2009); http://dx.doi.org/10.1063/1.3086883 (3 pages) | Cited 6 times

Online Publication Date: 19 February 2009

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Low temperature effects on the liquid crystal response time for mobile displays are investigated. We studied the rotational viscosity and elastic constants of two commercial liquid crystal mixtures in the range from −20 to 60 °C. At low temperatures, rotational viscosity still follows the modified Arrhenius law well but elastic constants are ∼ 30%–40% larger than those expected from mean-field theory. The responsible mechanism for this anomalous behavior originates from the increased fourth rank of order parameter at low temperatures.
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85.60.Pg Display systems
66.20.-d Viscosity of liquids; diffusive momentum transport
62.10.+s Mechanical properties of liquids
61.30.-v Liquid crystals

Plasmonic thermal IR emitters based on nanoamorphous carbon

Savaş Tay, Aleksandr Kropachev, Ismail Emre Araci, Terje Skotheim, Robert A. Norwood, and N. Peyghambarian

Appl. Phys. Lett. 94, 071113 (2009); http://dx.doi.org/10.1063/1.3089225 (3 pages) | Cited 5 times

Online Publication Date: 20 February 2009

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The development of plasmonic narrow-band thermal mid-IR emitters made from a conducting amorphous carbon composite is shown. These IR emitters have greatly improved thermal and mechanical stability compared to metallic emitters as they can be operated at 600 °C in air without any degradation in performance. The emitted thermal radiation has a bandwidth of 0.5 μm and can be set to the desired wavelength from 3 to 15 μm by changing the surface periodicity. The periodically patterned devices have in-band emissivities significantly exceeding that of the non-patterned devices, constituting simple yet efficient radiation sources at this important wavelength range.
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42.72.Ai Infrared sources
44.40.+a Thermal radiation
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
73.22.Lp Collective excitations

Vector holograms using radially polarized light

Hiroshi Ono, Hiroyuki Wakabayashi, Tomoyuki Sasaki, Akira Emoto, Tatsutoshi Shioda, and Nobuhiro Kawatsuki

Appl. Phys. Lett. 94, 071114 (2009); http://dx.doi.org/10.1063/1.3089236 (3 pages) | Cited 4 times

Online Publication Date: 20 February 2009

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We have demonstrated the vector holograms using the radially polarized light. The inhomogeneous polarized light well controlled the spatial distribution of the optical anisotropy in the solid state polymeric materials. The theoretical calculation revealed formation mechanism and optical properties of the vector holograms.
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42.40.Eq Holographic optical elements; holographic gratings
42.70.Jk Polymers and organics
42.70.Ln Holographic recording materials; optical storage media
42.40.Ht Hologram recording and readout methods
42.79.Dj Gratings

A magnetically active terahertz plasmonic artificial material

C. A. Baron and A. Y. Elezzabi

Appl. Phys. Lett. 94, 071115 (2009); http://dx.doi.org/10.1063/1.3086880 (3 pages) | Cited 1 time

Online Publication Date: 20 February 2009

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We present an actively tunable plasmonic artificial material consisting of random mixtures of subwavelength metallic and dielectric particles. Active control of terahertz particle plasmons is achieved via anisotropic magnetoresistance in ferromagnetic microparticles. The phenomenon is exploited to alter the group velocity of terahertz pulses by an amount adjustable via an external magnetic field. In a proof of principle experimental demonstration, we show how the artificial material can dynamically alter the propagation direction of terahertz pulses. Active terahertz plasmonic devices remain relatively unexplored, and the means of control enabled by this work may be applicable in photonic based information technologies.
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84.40.-x Radiowave and microwave (including millimeter wave) technology
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
75.47.-m Magnetotransport phenomena; materials for magnetotransport
75.50.Tt Fine-particle systems; nanocrystalline materials

Free-running, room temperature operation of an InGaAs/InP single-photon avalanche diode

Ryan E. Warburton, Mark Itzler, and Gerald S. Buller

Appl. Phys. Lett. 94, 071116 (2009); http://dx.doi.org/10.1063/1.3079668 (3 pages) | Cited 9 times

Online Publication Date: 20 February 2009

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Passive quenching operation of an InGaAs/InP single-photon avalanche diode detector at low excess bias is reported in terms of the key figures of merit including afterpulsing analysis. The reduced charge required to measure individual photon events meant that room temperature single-photon counting at 1550 nm wavelength was achievable without the requirement of electrical gating and with negligible afterpulsing effects evident.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors

Laser annealed composite titanium dioxide electrodes for dye-sensitized solar cells on glass and plastics

Heng Pan, Seung Hwan Ko, Nipun Misra, and Costas P. Grigoropoulos

Appl. Phys. Lett. 94, 071117 (2009); http://dx.doi.org/10.1063/1.3082095 (3 pages) | Cited 22 times

Online Publication Date: 20 February 2009

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We report a rapid and low temperature process for fabricating composite TiO2 electrodes for dye-sensitized solar cells on glass and plastics by in tandem spray deposition and laser annealing. A homogenized KrF excimer laser beam (248 nm) was used to layer-by-layer anneal spray deposited TiO2 nanoparticles. The produced TiO2 film is crack free and contains small particles (30 nm) mixed with different fractions of larger particles (100–200 nm) controlled by the applied laser fluence. Laser annealed double-layered structure is demonstrated for both doctor-blade deposited and spray-deposited electrodes and performance enhancement can be observed. The highest demonstrated all-laser-annealed cells utilizing ruthenium dye and liquid electrolyte showed power conversion efficiency of ∼ 3.8% under simulated illumination of 100 mW/cm2.
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84.60.Jt Photoelectric conversion
81.16.-c Methods of micro- and nanofabrication and processing
81.15.Rs Spray coating techniques
61.72.Cc Kinetics of defect formation and annealing

Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution

Kyoung-Kook Kim (김경국), Sam-dong Lee (이삼동), Hyunsoo Kim (김현수), Jae-Chul Park (박재철), Sung-Nam Lee (이성남), Youngsoo Park (박영수), Seong-Ju Park (박성주), and Sang-Woo Kim (김상우)

Appl. Phys. Lett. 94, 071118 (2009); http://dx.doi.org/10.1063/1.3077606 (3 pages) | Cited 45 times

Online Publication Date: 20 February 2009

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We report a dramatic increase in the light extraction efficiency of GaN-based blue light-emitting diodes (LEDs) by ZnO nanorod arrays on a planar indium tin oxide (ITO) transparent electrode. ZnO nanorods were grown into aqueous solution at the low temperature of 90 °C. With 20 mA current injection, the light output efficiency of the LED with ZnO nanorod arrays on ITO was increased by about 57% with no increase in a forward voltage over the conventional LEDs with planar ITO. The increased light extraction by the ZnO nanorod arrays is due to the formation of sidewalls and a rough surface, resulting in a multiple photon scattering at the LED surface.
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85.60.Jb Light-emitting devices
68.35.bg Semiconductors
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
81.16.-c Methods of micro- and nanofabrication and processing
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In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O2 cryoetching process

J. Pereira, L. E. Pichon, R. Dussart, C. Cardinaud, C. Y. Duluard, E. H. Oubensaid, P. Lefaucheux, M. Boufnichel, and P. Ranson

Appl. Phys. Lett. 94, 071501 (2009); http://dx.doi.org/10.1063/1.3085957 (3 pages) | Cited 7 times

Online Publication Date: 18 February 2009

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The oxyfluorinated silicon passivation layer created during various cryoetching processes is of interest in order to improve high aspect ratio profiles. In this work, the desorption of a SiOxFy layer obtained in an overpassivating SF6/O2 regime was investigated during the wafer warm-up from the cryogenic temperature to room temperature. An in situ x-ray photoelectron spectroscopy (XPS) device is used in order to probe the top-surface layer and understand the desorption mechanism. A new mechanism can be proposed using the evolution of fluorine, oxygen, silicon, and carbon contributions evidenced by XPS.
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79.60.Dp Adsorbed layers and thin films
81.65.Rv Passivation
81.65.Cf Surface cleaning, etching, patterning
68.43.Nr Desorption kinetics
52.77.Bn Etching and cleaning

Time-dependent gas phase kinetics in a hydrogen diluted silane plasma

S. Nunomura, I. Yoshida, and M. Kondo

Appl. Phys. Lett. 94, 071502 (2009); http://dx.doi.org/10.1063/1.3086312 (3 pages) | Cited 13 times

Online Publication Date: 19 February 2009

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The gas phase kinetics in a high-pressure hydrogen diluted silane plasma has been studied at time scales of 10−2–6×102 s. The time-resolved gas phase composition shows the following kinetics at different time scales: silane decomposition and polysilane generation in ≲2×10−1 s, nanoparticle formation and plasma density reduction in 10−1–100 s, polysilane accumulation in 100–102 s, and silane depletion and electrode heating in ≳101 s. Disilane radicals are implied to be the dominant film precursors in addition to silyl radicals.
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52.25.Dg Plasma kinetic equations
52.50.-b Plasma production and heating
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
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Thickness dependent electronic structure of La0.6Sr0.4MnO3 layer in SrTiO3/La0.6Sr0.4MnO3/SrTiO3 heterostructures studied by hard x-ray photoemission spectroscopy

K. Yoshimatsu, K. Horiba, H. Kumigashira, E. Ikenaga, and M. Oshima

Appl. Phys. Lett. 94, 071901 (2009); http://dx.doi.org/10.1063/1.3081016 (3 pages) | Cited 4 times

Online Publication Date: 17 February 2009

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The authors have investigated changes in the electronic structures of digitally controlled La0.6Sr0.4MnO3 (LSMO) layers sandwiched between SrTiO3 as a function of LSMO layer thickness in terms of hard x-ray photoemission spectroscopy (HX-PES). The HX-PES spectra show the evolution of Mn 3d derived states near the Fermi level and the occurrence of metal-insulator transition at 8 ML. The detailed analysis for the thickness dependent HX-PES spectra reveals the existence of the less conducting and nonmagnetic transition layer with a film thickness of about 4 ML in the interface region owing to significant interaction through the interface.
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71.20.Ps Other inorganic compounds
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
79.60.Jv Interfaces; heterostructures; nanostructures
68.55.-a Thin film structure and morphology
71.30.+h Metal-insulator transitions and other electronic transitions

Extended cyclic uniaxial loading of stretchable gold thin-films on elastomeric substrates

Ingrid M. Graz, Darryl P. J. Cotton, and Stéphanie P. Lacour

Appl. Phys. Lett. 94, 071902 (2009); http://dx.doi.org/10.1063/1.3076103 (3 pages) | Cited 29 times

Online Publication Date: 17 February 2009

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Gold thin-films (50 nm thick) on silicone membranes are reversibly stretchable. They exhibit continuous electrical conduction when pulled and relaxed by tens of percent. Here, we show that gold thin-film conductors on elastomeric substrates can withstand extensive uniaxial stretch cycling without electrical failure. The gold film develops into an interconnected network of islands, which reversibly move on the surface of the elastomer with applied strain. The resulting electrical resistance of the conductor remains finite and reproducible over 250 000 cycles to 20% applied strain.
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73.61.At Metal and metallic alloys
68.60.Bs Mechanical and acoustical properties

Photoelectric properties of Bi2O3/GaSe heterojunctions

L. Leontie, I. Evtodiev, V. Nedeff, M. Stamate, and M. Caraman

Appl. Phys. Lett. 94, 071903 (2009); http://dx.doi.org/10.1063/1.3035854 (3 pages) | Cited 1 time

Online Publication Date: 18 February 2009

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Photoelectrical characteristics and photoluminescence of n-Bi2O3/p-GaSe structures have been investigated. They show photosensitivity in the photon energy range of 1.85–3.10 eV. During thermal treatment of the heterojunction, Bi and O atoms diffuse into the GaSe layer, forming two impurity levels located at 0.101 and 0.429 eV above the valence-band top of GaSe.
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72.40.+w Photoconduction and photovoltaic effects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
78.55.-m Photoluminescence, properties and materials
71.55.-i Impurity and defect levels
66.30.H- Self-diffusion and ionic conduction in nonmetals
81.40.Gh Other heat and thermomechanical treatments

Thermal equation of state of copper studied by high P-T synchrotron x-ray diffraction

Yuejian Wang, Jianzhong Zhang, Hongwu Xu, Zhijun Lin, Luke L. Daemen, Yusheng Zhao, and Liping Wang

Appl. Phys. Lett. 94, 071904 (2009); http://dx.doi.org/10.1063/1.3085997 (3 pages) | Cited 4 times

Online Publication Date: 18 February 2009

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The unit-cell volume of copper (Cu) has been measured by synchrotron x-ray at pressures and temperatures of up to 8.1 GPa and 1100 K. From pressure-volume-temperature (P-V-T) measurements, thermoelastic parameters of Cu were derived based on a modified high-T Birch–Murnaghan equation of state and a thermal pressure approach. The ambient bulk modulus derived from this work is comparable to previously reported value, whereas all other thermoelastic parameters of Cu have never been determined before. These results extend our knowledge of the fundamental thermophysical properties on Cu.
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64.30.Ef Equations of state of pure metals and alloys
61.66.Bi Elemental solids
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.50.-p High-pressure effects in solids and liquids

The structural quality of AlxGa1−xN epitaxial layers grown by digitally alloyed modulated precursor epitaxy determined by transmission electron microscopy

M. E. Hawkridge, Z. Liliental-Weber, Hee Jin Kim, Suk Choi, Dongwon Yoo, Jae-Hyun Ryou, and Russell D. Dupuis

Appl. Phys. Lett. 94, 071905 (2009); http://dx.doi.org/10.1063/1.3086280 (3 pages) | Cited 3 times

Online Publication Date: 18 February 2009

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AlxGa1−xN layers of varying composition (0.5<xAl<1.0) grown in the digitally alloyed modulated precursor epitaxial regime employing AlN and GaN binary sublayers by metal organic chemical vapor deposition on AlN templates were characterized by transmission electron microscopy techniques. Fine lamellae were observed in bright field images that indicate a possible variation in composition due to the modulated nature of growth. In higher Ga content samples (xAl<0.75), a compositional inhomogeneity associated with thicker island regions was observed, which is determined to be due to large Ga-rich areas formed at the base of the layer. Possible causes for the separation of Ga-rich material are discussed in the context of the growth regime used.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Ea III-V semiconductors
68.55.ag Semiconductors
68.37.Og High-resolution transmission electron microscopy (HRTEM)
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