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23 Feb 2009

Volume 94, Issue 8, Articles (08xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 94, 082501 (2009); http://dx.doi.org/10.1063/1.3085971 (3 pages)

Chunghee Nam, B. G. Ng, F. J. Castaño, M. D. Mascaro, and C. A. Ross
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Announcement: Multimedia capability added to Applied Physics Letters

Mark M. Cassar

Appl. Phys. Lett. 94, 080201 (2009); http://dx.doi.org/10.1063/1.3098974 (1 page)

Online Publication Date: 26 February 2009

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01.60.+q Biographies, tributes, personal notes, and obituaries
01.10.Cr Announcements, news, and awards
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Optical microcavities on Si formed by self-assembled InGaAs/GaAs quantum dot microtubes

S. Vicknesh, F. Li, and Z. Mi

Appl. Phys. Lett. 94, 081101 (2009); http://dx.doi.org/10.1063/1.3086333 (3 pages) | Cited 20 times

Online Publication Date: 23 February 2009

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We report on the fabrication and emission characteristics of InGaAs/GaAs quantum dot microtube ring resonators on Si substrates achieved using a simple but controllable substrate-on-substrate transfer process. We have observed three-dimensionally confined optical modes, including both radial and axial field distributions from quantum dot microtubes on Si with an engineered geometry at 77 K, which agrees well with results calculated using a photonic quasi-Schrödinger equation. An intrinsic Q-factor of ∼ 2000 is also derived.
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78.67.Hc Quantum dots
78.55.Cr III-V semiconductors

Polarization dependent transmission through asymmetric C-shaped holes

J. W. Lee, M. A. Seo, D. S. Kim, J. H. Kang, and Q-Han Park

Appl. Phys. Lett. 94, 081102 (2009); http://dx.doi.org/10.1063/1.3088851 (3 pages) | Cited 6 times

Online Publication Date: 23 February 2009

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We report that asymmetric c-shaped holes show mode switching between single- and double-resonance frequencies in the terahertz region, when the polarization direction of the incident light is controlled. The number of resonant frequencies is attributed to fundamental shape modes such as circle-, coaxial-, and rectangular-shaped holes activated under each polarization condition. All of these resonant peaks also show a transmission of over 90% with the assistance of the periodically arranged holes. These experimental results are in close agreement with theoretical simulations.
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42.70.-a Optical materials
42.25.Ja Polarization
42.79.Ci Filters, zone plates, and polarizers
84.40.-x Radiowave and microwave (including millimeter wave) technology

Infrared transparent carbon nanotube thin films

Liangbing Hu, David S. Hecht, and George Grüner

Appl. Phys. Lett. 94, 081103 (2009); http://dx.doi.org/10.1063/1.3075067 (3 pages) | Cited 19 times

Online Publication Date: 24 February 2009

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We have measured the infrared properties of optically transparent and electrically conductive single walled carbon nanotube thin films. We found that nanotube films with sheet resistance values of 200 Ω/sq show outstanding transmittance in the infrared range up to at least 22 μm, with an average transmittance greater than 90% over this range. The infrared properties of various materials were compared and we found that transparent nanotube electrodes and transparent graphene electrodes outperform the others in several key categories. This study opens another important application area for conductive nanotube thin films.
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78.67.Ch Nanotubes
73.63.Fg Nanotubes

Unified explanation of the fluorescence decay and blinking characteristics of semiconductor nanocrystals

M. Tachiya and Kazuhiko Seki

Appl. Phys. Lett. 94, 081104 (2009); http://dx.doi.org/10.1063/1.3086297 (3 pages) | Cited 7 times

Online Publication Date: 24 February 2009

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Recently power law dynamics was observed in the fluorescence decay from semiconductor nanocrystals and a model was proposed and analyzed on the basis the of Monte Carlo simulation to clarify the relation between the power law fluorescence decay and the power law blinking. However, analysis of the model on the basis of the Monte Carlo simulation is not decisive. In this paper we present the analytical solution of the model. The analytical result is used to prove rigorously that the exponent of the power law blinking and that of the power law fluorescence decay are the same.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.55.-m Photoluminescence, properties and materials

Observation of optical torsional stiffness in a high optical power cavity

Yaohui Fan, Lucienne Merrill, Chunnong Zhao, Li Ju, David Blair, Bram Slagmolen, David Hosken, Aidan Brooks, Peter Veitch, Damien Mudge, and Jesper Munch

Appl. Phys. Lett. 94, 081105 (2009); http://dx.doi.org/10.1063/1.3088850 (3 pages) | Cited 2 times

Online Publication Date: 24 February 2009

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We have observed negative optical torsional rigidity in an 80 m suspended high optical power cavity that would induce the Sidles–Sigg instability as a result of sufficient circulating power. The magnitude of the negative optical spring constant per unit power is a few μN m/W as the result of the optical torsional stiffness in the yaw mode of a suspended mirror Fabry–Pérot cavity. It has been observed to depend on the g-factor of the cavity which is in agreement with the Sidles–Sigg theory.
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42.62.Eh Metrological applications; optical frequency synthesizers for precision spectroscopy
07.60.Ly Interferometers
04.80.Nn Gravitational wave detectors and experiments
95.55.Ym Gravitational radiation detectors; mass spectrometers; and other instrumentation and techniques

Microstructural imaging of high repetition rate ultrafast laser written LiTaO3 waveguides

Ben McMillen, Kevin P. Chen, and Daniel Jaque

Appl. Phys. Lett. 94, 081106 (2009); http://dx.doi.org/10.1063/1.3088852 (3 pages) | Cited 4 times

Online Publication Date: 24 February 2009

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The microstructural changes associated with the formation of lithium tantalate waveguides after high repetition rate ultrafast laser inscription has been investigated by confocal micro-Raman experiments. While the laser beam focal volume is characterized by significant lattice damage, no reduction of Raman mode strength has been observed at the guiding region, suggesting the preservation of the nonlinear optical coefficient in the waveguide. A general blueshift of the Raman modes has been observed at the guiding region, suggesting lattice compression as the dominant mechanism of waveguide formation.
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42.62.Cf Industrial applications
42.79.Gn Optical waveguides and couplers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.86.+b Optical workshop techniques

Low threshold current density of InAs quantum dash laser on InP (100) through optimizing double cap technique

D. Zhou, R. Piron, M. Dontabactouny, O. Dehaese, F. Grillot, T. Batte, K. Tavernier, J. Even, and S. Loualiche

Appl. Phys. Lett. 94, 081107 (2009); http://dx.doi.org/10.1063/1.3088862 (3 pages) | Cited 8 times

Online Publication Date: 24 February 2009

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We report on the uniformity improvement of InAs quantum dashes (QDHs) grown by molecular beam epitaxy on InP (100) through optimizing double cap technique. Broad-area lasers were fabricated with an emission wavelength of 1.58 μm. A threshold current density of 360 A/cm2 was achieved for a five stack QDH structure and a cavity length of 1.2 mm. This results from a reduced inhomogeneous broadening (62 meV) and lower internal optical losses (7 cm−1). The achievement paves the way toward ultralow threshold semiconductor laser for telecommunications.
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42.55.Px Semiconductor lasers; laser diodes
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
42.70.Hj Laser materials

Coupling efficiency of monolithic, waveguide-integrated Si photodetectors

Donghwan Ahn, Ching-yin Hong, Lionel C. Kimerling, and Jurgen Michel

Appl. Phys. Lett. 94, 081108 (2009); http://dx.doi.org/10.1063/1.3089359 (3 pages) | Cited 3 times

Online Publication Date: 24 February 2009

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A waveguide-integrated photodetector provides a small-footprint, low-capacitance design that overcomes the bandwidth-efficiency trade-off problem of free space optics. High performance silicon devices are critical to the emergence of electronic-photonic integrated circuits on the complementary metal oxide semiconductor platform. We have fabricated vertical p-i-n silicon photodetectors that are monolithically integrated with compact silicon oxynitride channel waveguides. We report over 90% coupling efficiency of 830 nm light from the silicon oxynitride (SiOxNy) channel waveguide to the silicon photodetector. We analyze the dependence of coupling on waveguide index by comparing coupling from low index-contrast waveguides and high index-contrast waveguides.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Tv Field effect devices
42.62.-b Laser applications

Injectorless quantum cascade laser with low voltage defect and improved thermal performance grown by metal-organic chemical-vapor deposition

Dibyendu Dey, Wei Wu, Omer Gokalp Memis, and Hooman Mohseni

Appl. Phys. Lett. 94, 081109 (2009); http://dx.doi.org/10.1063/1.3089362 (3 pages) | Cited 8 times

Online Publication Date: 24 February 2009

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We demonstrate a strain-compensated injectorless quantum cascade laser (I-QCL), grown by metal-organic chemical-vapor deposition, with a very low voltage defect operating up to room temperature. We experimentally study the effect of voltage defect on thermal performance by comparing the rise in core temperature over a 300 ns pulse width of I-QCL and conventional QCL, working in pulsed mode using time-resolved step scan. I-QCL shows approximately eight times lower rate of rise in core temperature compared to conventional QCL.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Measurement of gain and losses of a midinfrared quantum cascade laser by wavelength chirping spectroscopy

E. Benveniste, S. Laurent, A. Vasanelli, C. Manquest, C. Sirtori, F. Teulon, M. Carras, and X. Marcadet

Appl. Phys. Lett. 94, 081110 (2009); http://dx.doi.org/10.1063/1.3089570 (3 pages) | Cited 4 times

Online Publication Date: 24 February 2009

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We present an optimized technique for the measurement of gain and losses of semiconductor lasers. We optically inject the beam of a distributed feedback laser (DFB) inside the cavity of the lasers under study. The DFB laser operates in a pulsed mode and shifts its emission wavelength as a function of time. This frequency chirp creates the Fabry–Pérot fringes of the transmitted intensity that contains all the information on the cavity losses. The setup has been validated by a quantitative study of the losses as a function of the injected current, for a quantum cascade laser emitting at 7.6 μm.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes

A pH-tunable hydrogel microlens array with temperature-actuated light-switching capability

Zhenwen Ding and Babak Ziaie

Appl. Phys. Lett. 94, 081111 (2009); http://dx.doi.org/10.1063/1.3089689 (3 pages) | Cited 4 times

Online Publication Date: 24 February 2009

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In this letter, we demonstrate a two step casting process to fabricate a bifunctional hydrogel-based microlens array, which responds to both temperature (becomes opaque above certain temperature) and pH (changes its focal length at different pH levels), and can be operated in air for an extended period of time. Each lens in the array is 1 mm in diameter and its focal length changes from 4.5 to 55 mm when the environmental pH is varied between 2.0 and 5.0. The light-switching capability is measured to be ∼ 92% when temperature increases from 25 to 35 °C.
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42.79.Bh Lenses, prisms and mirrors
42.82.Et Waveguides, couplers, and arrays
42.70.Jk Polymers and organics
82.70.Gg Gels and sols
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.82.Cr Fabrication techniques; lithography, pattern transfer

Infrared quantum counting by nondegenerate two photon conductivity in GaAs

Fabien Boitier, Jean-Baptiste Dherbecourt, Antoine Godard, and Emmanuel Rosencher

Appl. Phys. Lett. 94, 081112 (2009); http://dx.doi.org/10.1063/1.3089380 (3 pages) | Cited 7 times

Online Publication Date: 24 February 2009

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We report on infrared quantum counting of photons at optical communication wavelengths based on nondegenerate two-photon absorption in a GaAs photomultiplier tube. The detected photon energy is lower than the GaAs band gap and the energy difference is complemented by a high intensity pump field. This detection setup is simple, compact, has a broad spectral bandwidth, and benefits from the intrinsic low noise and dark counts of large band gap semiconductor junctions.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Ha Photomultipliers; phototubes and photocathodes
78.66.Fd III-V semiconductors
42.50.Hz Strong-field excitation of optical transitions in quantum systems; multiphoton processes; dynamic Stark shift

The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes

Di Zhu, Jiuru Xu, Ahmed N. Noemaun, Jong Kyu Kim, E. Fred Schubert, Mary H. Crawford, and Daniel D. Koleske

Appl. Phys. Lett. 94, 081113 (2009); http://dx.doi.org/10.1063/1.3089687 (3 pages) | Cited 22 times

Online Publication Date: 25 February 2009

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We report on a significant decrease in the diode-ideality factor of GaInN/GaN multiple quantum well light-emitting diodes (LEDs), from 5.5 to 2.4, as Si-doping is applied to an increasing number of quantum barriers (QBs). The minimum ideality factor of 2.4 is obtained when all QBs are doped. It is shown that polarization-induced triangular band profiles of the undoped QBs are the major cause of the high ideality factors in GaInN/GaN LEDs. Numerical simulations show excellent agreement with the measured ideality factor value and its dependence on QB doping.
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85.60.Jb Light-emitting devices
61.72.uj III-V and II-VI semiconductors
81.07.Ta Quantum dots
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

On resonant optical excitation and carrier escape in GaInN/GaN quantum wells

Martin F. Schubert, Jiuru Xu, Qi Dai, Frank W. Mont, Jong Kyu Kim, and E. Fred Schubert

Appl. Phys. Lett. 94, 081114 (2009); http://dx.doi.org/10.1063/1.3089691 (3 pages) | Cited 14 times

Online Publication Date: 25 February 2009

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Recently, photoluminescence studies using resonant optical excitation in GaInN layers have been used to investigate the physical origin of efficiency droop in GaInN/GaN light-emitting diodes. In these studies, it has been assumed that in the case of resonant excitation, where electron-hole pairs are generated in the GaInN layers only, carrier transport effects play no role. We report that in contrast to this assumption, carrier escape from quantum wells does take place and shows strong dependence upon the duration of excitation and bias conditions. We also discuss the time scales required to reach steady-state conditions under pulsed optical excitation.
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78.55.Cr III-V semiconductors
73.63.Hs Quantum wells
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.67.De Quantum wells
85.60.Jb Light-emitting devices

SiGe quantum well infrared photodetectors on pseudosubstrate

P. Rauter, T. Fromherz, C. Falub, D. Grützmacher, and G. Bauer

Appl. Phys. Lett. 94, 081115 (2009); http://dx.doi.org/10.1063/1.3089817 (3 pages) | Cited 4 times

Online Publication Date: 25 February 2009

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In the SiGe system, freedom in the design of quantum well (QW) devices is constrained by the 4.2% lattice mismatch between silicon and germanium. The substitution of the Si substrate by a SiGe pseudosubstrate customized to the respective QW structure’s requirements enables the growth of a p-type SiGe QW infrared photodetector featuring interfaces between pure Si and SiGe layers of ultrahigh Ge content for a full exploitation of the band offset between the two materials. Our presented device realizes design concepts for narrowing the spectral response and reducing the noise gain made feasible by the utilization of a Si0.5Ge0.5 pseudosubstrate.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Subwavelength-resolved bidirectional imaging between two and three dimensions using a surface plasmon launching lens

Jiayuan Wang, Jiasen Zhang, Xiaofei Wu, Hao Luo, and Qihuang Gong

Appl. Phys. Lett. 94, 081116 (2009); http://dx.doi.org/10.1063/1.3089838 (3 pages) | Cited 6 times

Online Publication Date: 25 February 2009

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We demonstrate subwavelength-resolved bidirectional conjugate imaging between three-dimensional far-field and two-dimensional surface plasmon (SP) by using a SP launching lens (SPLL), which consists of multiple groove zones that is designed according to the Fresnel zone on a gold film. Resolvable separations between two SP point sources of 704 and 668 nm were obtained for far-field to SP and the contrary, respectively, at λ = 830 nm. The SPLL shows similar imaging properties to a traditional optical lens, which can be used to connect multiple channels between far-field and SP.
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42.79.Bh Lenses, prisms and mirrors
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Optical bistability enhanced by highly localized bulk plasmon polariton modes in subwavelength metal-nonlinear dielectric multilayer structure

Junxue Chen, Pei Wang, Xiaolei Wang, Yonghua Lu, RongSheng Zheng, Hai Ming, and Qiwen Zhan

Appl. Phys. Lett. 94, 081117 (2009); http://dx.doi.org/10.1063/1.3079408 (3 pages) | Cited 11 times

Online Publication Date: 26 February 2009

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Optical bistability of subwavelength metal-nonlinear dielectric multilayer structure is numerically studied in this letter. It is found that very low intensity thresholds for optical bistability can be achieved due to the excitation of highly localized bulk plasmon polariton modes with TM polarized illumination. A bistability threshold of 6.9 MW/cm2 is obtained for BPP0 mode, which is much lower than the recently reported results based on the large local field enhancement at the band edge of metal-dielectric photonic band gap structure [ A. Husakou and J. Herrmann, Phys. Rev. Lett. 99, 127402 (2007) ].
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.68.+m Optical properties of surfaces
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials

Optical transmission properties of perforated metal films in the middle-infrared range

Yong-Hong Ye, Yurong Cao, Zhi-Bing Wang, Desheng Yan, and Jia-Yu Zhang

Appl. Phys. Lett. 94, 081118 (2009); http://dx.doi.org/10.1063/1.3088858 (3 pages) | Cited 1 time

Online Publication Date: 26 February 2009

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We experimentally studied the enhanced optical transmission of perforated silver films in the middle-infrared region. The optical transmission properties of the samples with classical inductive frequency selective surface structures are also affected by both the periodicity and the aperture shape. Our results indicate that the physical operating mechanisms are the same for the plasmon crystal and the frequency selective surface, and both surface plasmon polaritons due to the periodicity and waveguide modes that are present in single holes have effect in the optical transmission enhancement.
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78.66.Bz Metals and metallic alloys
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
68.35.bd Metals and alloys
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)

500 nm electrically driven InGaN based laser diodes

Désirée Queren, Adrian Avramescu, Georg Brüderl, Andreas Breidenassel, Marc Schillgalies, Stephan Lutgen, and Uwe Strauß

Appl. Phys. Lett. 94, 081119 (2009); http://dx.doi.org/10.1063/1.3089573 (3 pages) | Cited 55 times

Online Publication Date: 27 February 2009

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Based on recent improvements of growth of In-rich InGaN quantum wells with low defect density, we demonstrate current driven InGaN laser diodes at wavelengths as long as 500 nm. The laser structures are grown on c-plane GaN substrate and are processed as broad oxide-insulated stripe laser diodes. We discuss the impact of the piezoelectric field on the emission energy of long wavelength laser diodes for this growth orientation. The combination of low threshold current density of 8.2 kA/cm2 with high slope efficiency of 650 mW/A enables high output powers up to several tens of milliwatts.
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42.55.Px Semiconductor lasers; laser diodes
68.65.Fg Quantum wells

Optically pumped intersubband emission of short-wave infrared radiation with GaN/AlN quantum wells

Kristina Driscoll, Yitao Liao, Anirban Bhattacharyya, Lin Zhou, David J. Smith, Theodore D. Moustakas, and Roberto Paiella

Appl. Phys. Lett. 94, 081120 (2009); http://dx.doi.org/10.1063/1.3089840 (3 pages) | Cited 14 times

Online Publication Date: 27 February 2009

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Optically pumped pulsed emission of short-wave infrared radiation based on intersubband transitions in GaN/AlN quantum wells is demonstrated. Nanosecond-scale pump pulses are used to resonantly excite electrons from the ground states to the second-excited subbands, followed by radiative relaxation into the first-excited subbands. The measured room-temperature output spectra are peaked near 2 μm with integrated powers of a few hundred nanowatts. The intersubband origin of the measured luminescence is confirmed via an extensive study of its polarization properties and pump wavelength dependence, as well as simulations of the quantum well subband structure.
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78.67.De Quantum wells
73.21.Fg Quantum wells
78.30.Fs III-V and II-VI semiconductors
78.55.Cr III-V semiconductors
81.07.St Quantum wells

A KTiOPO4 nonlinear photonic crystal for blue second harmonic generation

Carlota Canalias, Mats Nordlöf, Valdas Pasiskevicius, and Fredrik Laurell

Appl. Phys. Lett. 94, 081121 (2009); http://dx.doi.org/10.1063/1.3093798 (3 pages) | Cited 4 times

Online Publication Date: 27 February 2009

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A nonlinear photonic crystal with a rectangular domain lattice of 6.09×6 μm2 has been fabricated and characterized in flux-grown KTiOPO4. It was used to demonstrate continuous-wave and multiple beam tunable blue second harmonic generation.
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42.70.Qs Photonic bandgap materials
42.70.Mp Nonlinear optical crystals
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
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Influence of target material on structure of the plasma outflow produced by a partly defocused laser beam

A. Kasperczuk, T. Pisarczyk, M. Kalal, J. Ullschmied, E. Krousky, K. Masek, M. Pfeifer, K. Rohlena, J. Skala, and P. Pisarczyk

Appl. Phys. Lett. 94, 081501 (2009); http://dx.doi.org/10.1063/1.3082035 (3 pages) | Cited 8 times

Online Publication Date: 24 February 2009

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This paper is aimed at the explanation of mechanisms responsible for plasma jet formation: the radiative cooling of ablative plasma and the influence of target irradiation geometry. The experiment was carried out with the Prague Asterix Laser System (PALS) iodine laser. A three-frame laser interferometer and an x-ray streak camera were used as two main diagnostic tools. These investigations have shown that the geometry of target irradiation is crucial, an annular target irradiation being necessary for plasma jet formation. Thus the role of radiative cooling in the plasma jet forming seems to be negligible.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.75.-d Plasma devices
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.70.La X-ray and γ-ray measurements

Removing dust particles from a large area discharge

Yang-fang Li, U. Konopka, K. Jiang, T. Shimizu, H. Höfner, H. M. Thomas, and G. E. Morfill

Appl. Phys. Lett. 94, 081502 (2009); http://dx.doi.org/10.1063/1.3089873 (3 pages) | Cited 8 times

Online Publication Date: 27 February 2009

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Introducing a striped electrode in a large area discharge allows us to transport microparticles in the discharge in a user defined way. A directed and continuous dust transport is established by modulating the voltage signals on all individual electrodes to cause a traveling plasma sheath distortion. Particles, trapped in the potential wells and thus following the distortions, are finally removed from the central discharge region. Transport efficiency and velocity can be controlled by changing amplitude and traveling velocity of the plasma distortions.
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52.27.Lw Dusty or complex plasmas; plasma crystals
52.40.Kh Plasma sheaths
52.80.-s Electric discharges
52.25.Fi Transport properties
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Electromigration-induced bond improvement for three-dimensional integrated circuits

H. L. Leong, C. L. Gan, C. V. Thompson, K. L. Pey, and H. Y. Li

Appl. Phys. Lett. 94, 081901 (2009); http://dx.doi.org/10.1063/1.3081456 (3 pages) | Cited 3 times

Online Publication Date: 24 February 2009

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Bonded Cu interconnects were stressed with increasing current while the contact resistance was measured. Interconnects with high initial contact resistance exhibited a contact resistance reduction phenomenon at a critical current density. The higher the initial contact resistance is, the lower the current required to trigger this phenomenon. Interconnects with low initial contact resistances exhibit this phenomenon only when stressed at a higher temperature. Electromigration is shown to be the most likely mechanism responsible for this phenomenon. This behavior can be used for low-temperature improvement of the quality of bonded interconnects for three-dimensional integrated circuits.
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85.40.Ls Metallization, contacts, interconnects; device isolation
66.30.Qa Electromigration
73.40.Cg Contact resistance, contact potential
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