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23 Feb 2009

Volume 94, Issue 8, Articles (08xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 94, 082501 (2009); http://dx.doi.org/10.1063/1.3085971 (3 pages)

Chunghee Nam, B. G. Ng, F. J. Castaño, M. D. Mascaro, and C. A. Ross
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Patterned boron nanowires and field emission properties

Jifa Tian, Chao Hui, Lihong Bao, Chen Li, Yuan Tian, Hao Ding, Chengmin Shen, and Hong-jun Gao

Appl. Phys. Lett. 94, 083101 (2009); http://dx.doi.org/10.1063/1.3080211 (3 pages) | Cited 7 times

Online Publication Date: 23 February 2009

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Patterns of assembled Fe3O4 nanoparticles on Si(111) wafer were formed by the self-assembly technique. Three factors, concentration of the Fe3O4 nanoparticles solution, dosage of the solution, and temperature of the Si wafer, were found to affect the quality of the Fe3O4 nanoparticle patterns. The prepared Si(111) wafer was used as the substrate to grow the patterned boron nanowires by thermoreduction method. Furthermore, a notable field emission property with moderate turn on field was obtained on the patterned boron nanowires. Our results indicate that the patterned boron nanowires have a great potential of applications in flat plane display and electron emission nanodevices.
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61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
81.16.Dn Self-assembly
81.07.Wx Nanopowders
79.70.+q Field emission, ionization, evaporation, and desorption

Enhanced thermal stability and nanoparticle-mediated surface patterning: Pt/TiO2(110)

A. Naitabdi, F. Behafarid, and B. Roldan Cuenya

Appl. Phys. Lett. 94, 083102 (2009); http://dx.doi.org/10.1063/1.3083557 (3 pages) | Cited 8 times

Online Publication Date: 23 February 2009

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This letter reports (i) the enhanced thermal stability (up to 1060 °C) against coarsening and/or desorption of self-assembled Pt nanoparticles synthesized by inverse micelle encapsulation and deposited on TiO2(110) and (ii) the possibility of taking advantage of the strong nanoparticle/support interactions present in this system to create patterned surfaces at the nanoscale. Following our approach, TiO2 nanostripes with tunable width, orientation, and uniform arrangement over large surface areas were produced.
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81.16.Rf Micro- and nanoscale pattern formation
81.40.Gh Other heat and thermomechanical treatments
68.35.bt Other materials
82.70.Uv Surfactants, micellar solutions, vesicles, lamellae, amphiphilic systems, (hydrophilic and hydrophobic interactions)
82.70.Dd Colloids
68.43.Nr Desorption kinetics
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Self-aligned placement of biologically synthesized Coulomb islands within nanogap electrodes for single electron transistor

Shinya Kumagai, Shigeo Yoshii, Nozomu Matsukawa, Kazuaki Nishio, Rikako Tsukamoto, and Ichiro Yamashita

Appl. Phys. Lett. 94, 083103 (2009); http://dx.doi.org/10.1063/1.3085767 (3 pages) | Cited 11 times

Online Publication Date: 23 February 2009

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Biological synthesis and self-aligned placement of a Coulomb island was demonstrated for single electron transistor (SET) fabrication using a cage-shaped protein, apoferritin. Homogenous ϕ7 nm Co3O4 and In oxide nanoparticles (NPs) were synthesized utilizing the apoferritin cavity as a spatially restricted chemical reaction chamber. Apoferritin accommodating a NP (Co3O4, In oxide) showed specific affinity to a Ti surface and self-aligned itself between a pair of Au/Ti nanogap electrodes. After the protein cage was eliminated, two tunnel junctions between the NP and each electrode had the same gap, thereby forming an ideal SET structure. The produced SET exhibited a Coulomb-staircase/oscillation at 4.2 K.
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85.65.+h Molecular electronic devices
85.35.Gv Single electron devices

Rectification of force-distance curve using capacitance measurement

Y. Naitou, H. Ogiso, and N. Ookubo

Appl. Phys. Lett. 94, 083104 (2009); http://dx.doi.org/10.1063/1.3086899 (3 pages) | Cited 1 time

Online Publication Date: 23 February 2009

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We demonstrate the rectification of force spectroscopy in noncontact atomic force microscopy. The resonant frequency shift (Δf) in the probe oscillation and distance-modulated capacitance (dC/dZ) are simultaneously measured on thin dielectric films as a function of externally applied bias voltage and tip-sample distance Z. Analysis of dC/dZ spectroscopy has revealed that the probe-tip position shifts due to the attractive force acting between the tip and a sample. We show that the shifted Δf-Z curve can be rectified and the deformation of the probe tip can be quantitatively assessed.
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68.37.Ps Atomic force microscopy (AFM)
07.79.Lh Atomic force microscopes
77.55.-g Dielectric thin films
73.61.Ng Insulators

Crystallography of self-assembled DySi2 nanowires on a Si substrate

Dong Qiu, Ming-Xing Zhang, and Patrick M. Kelly

Appl. Phys. Lett. 94, 083105 (2009); http://dx.doi.org/10.1063/1.3085772 (3 pages) | Cited 4 times

Online Publication Date: 24 February 2009

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A recently developed crystallographic model, edge-to-edge matching, has been used to interpret the crystallographic features of self-assembled DySi2 nanowires on Si substrates. All of the observed orientation relationships (ORs) and interface orientations of the DySi2 on Si(111), (001), and (110) were predicted by one criterion. The calculated results are fully consistent with the previous high-resolution transmission electron microscopy observations. The preference for each OR and interface was discussed in terms of the competition between thermodynamics and kinetic factors. This model can also be used in other epitaxy systems and has strong potential for future nanostructure design.
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61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
65.80.-g Thermal properties of small particles, nanocrystals, nanotubes, and other related systems
68.55.-a Thin film structure and morphology

Strong and stable photoluminescence from the semiconducting inner tubes within double walled carbon nanotubes

Daisuke Shimamoto, Hiroyuki Muramatsu, Takuya Hayashi, Yoong Ahm Kim, Morinobu Endo, Jin Sung Park, Riichiro Saito, Mauricio Terrones, and Mildred S. Dresselhaus

Appl. Phys. Lett. 94, 083106 (2009); http://dx.doi.org/10.1063/1.3085966 (3 pages) | Cited 13 times

Online Publication Date: 24 February 2009

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We examined the optical features of single wall carbon nanotubes (SWNTs) and the inner tubes within double walled carbon nanotubes (DWNTs) having the same (n,m) chirality. The brighter and more stable photoluminescence signals as well as the larger absorbance were observed for the semiconducting inner tubes within DWNTs and not for SWNTs. The outer layers of DWNTs maintain the high structural integrity of the inner tubes during both oxidative purification and strong sonication steps and are responsible in increasing the dielectric screening (due to weaker Coulomb interaction); thus leading to a redshift of the E11S and E22S excitonic transitions.
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78.67.Ch Nanotubes
71.35.-y Excitons and related phenomena
61.46.Fg Nanotubes
78.55.Ap Elemental semiconductors

Lateral alignment of InGaAs quantum dots as function of spacer thickness

Zh. M. Wang, C. Rodriguez, Sh. Seydmohamadi, Yu. I. Mazur, Y. Z. Xie, and G. J. Salamo

Appl. Phys. Lett. 94, 083107 (2009); http://dx.doi.org/10.1063/1.3089695 (3 pages) | Cited 3 times

Online Publication Date: 24 February 2009

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The effects of spacer thickness on lateral alignment and density of InGaAs quantum dots on GaAs(311)B substrates is investigated. As the thickness of the spacer layers is increased, the two-dimensional lateral ordering previously demonstrated on GaAs(311)B is replaced by the one-dimensional dot chains normally observed on GaAs(100). Additionally, the dot density is found to increase proportionally with spacer thickness. The transition of lateral alignment regimes results from two processes competing to dominate the growth mechanism: the elastic anisotropy of the matrix and the characteristics of surface diffusion.
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68.65.Hb Quantum dots (patterned in quantum wells)
68.55.ag Semiconductors
68.35.Fx Diffusion; interface formation

Size-dependent oxidation behavior for the anomalous initial thermal oxidation process of Si

H. Cui, Y. Sun, G. Z. Yang, G. W. Yang, and C. X. Wang

Appl. Phys. Lett. 94, 083108 (2009); http://dx.doi.org/10.1063/1.3089794 (3 pages) | Cited 1 time

Online Publication Date: 25 February 2009

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To have a clear insight into the physical origin of the anomalous initial oxidation behavior for silicon oxidation, we proposed a kinetics model by introducing the nanosize effect into the oxidation process. The rate equation of oxide growth was calculated based on our model, and these results are in excellent agreement with experiments. Notably, the present model not only bridges the breakdown of Deal–Grove model [ B. E. Deal and A. S. Grove, J. Appl. Phys. 36, 3770 (1965) ] in the anomalous initial region but also accurately describes the oxidation process in the whole oxidation regions over a wide temperature range.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.30.-b Specific chemical reactions; reaction mechanisms
66.30.H- Self-diffusion and ionic conduction in nonmetals

One-step synthesis of Ge–SiO2 core-shell nanowires

Eli Sutter, Fernando Camino, and Peter Sutter

Appl. Phys. Lett. 94, 083109 (2009); http://dx.doi.org/10.1063/1.3089235 (3 pages) | Cited 6 times

Online Publication Date: 25 February 2009

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We report on a one-step process based on thermal evaporation at moderate temperatures that yields single-crystalline Ge nanowires (NWs) encapsulated in SiO2 shells. The dielectric shell forms around the Ge NW core during the NW growth process itself, an advantage in the assembly of NW devices such as surround-gate NW field-effect transistors (FETs). The formation of the core-shell structures proceeds via an unconventional vapor-liquid-solid process involving root growth of SiGe NWs and selective Si oxidation by background oxygen in the reactor. Electrical measurements of the p-type Ge–SiO2 FET devices show efficient gate control and hole mobilities of 20 cm2/V s.
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81.16.Pr Micro- and nano-oxidation
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
72.20.Ee Mobility edges; hopping transport
85.30.Tv Field effect devices
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Protein adsorption on heterogeneous surfaces

Nitesh Aggarwal, Ken Lawson, Matthew Kershaw, Robert Horvath, and Jeremy Ramsden

Appl. Phys. Lett. 94, 083110 (2009); http://dx.doi.org/10.1063/1.3078397 (3 pages) | Cited 1 time

Online Publication Date: 26 February 2009

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The adsorption of the protein bovine serum albumin from an aqueous solution onto substrata made from pure silica, pure zirconia, and a mixture of the two has revealed that the adsorption behavior of the protein onto the mixture very significantly diverges from the corresponding mean of the behaviors with the pure substrata. A tentative explanation in terms of matching substratum heterogeneity with protein surface heterogeneity is offered.
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87.85.J- Biomaterials
87.14.E- Proteins
68.47.Pe Langmuir-Blodgett films on solids; polymers on surfaces; biological molecules on surfaces

Gas detection using low-temperature reduced graphene oxide sheets

Ganhua Lu, Leonidas E. Ocola, and Junhong Chen

Appl. Phys. Lett. 94, 083111 (2009); http://dx.doi.org/10.1063/1.3086896 (3 pages) | Cited 59 times

Online Publication Date: 27 February 2009

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We demonstrate a high-performance gas sensor using partially reduced graphene oxide (GO) sheets obtained through low-temperature step annealing (300 °C at maximum) in argon flow at atmospheric pressure. The electrical conductance of GO was measured after each heating cycle to interpret the level of reduction. The thermally reduced GO showed p-type semiconducting behavior in ambient conditions and were responsive to low-concentration NO2 diluted in air at room temperature. The sensitivity is attributed to the electron transfer from the reduced GO to adsorbed NO2, which leads to enriched hole concentration and enhanced electrical conduction in the reduced GO sheet.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
68.43.Mn Adsorption kinetics
72.20.-i Conductivity phenomena in semiconductors and insulators
72.80.Rj Fullerenes and related materials

Observation of frequency band gaps in a one-dimensional nanostructured magnonic crystal

Z. K. Wang, V. L. Zhang, H. S. Lim, S. C. Ng, M. H. Kuok, S. Jain, and A. O. Adeyeye

Appl. Phys. Lett. 94, 083112 (2009); http://dx.doi.org/10.1063/1.3089839 (3 pages) | Cited 56 times

Online Publication Date: 27 February 2009

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We report the experimental observation of band gaps in a synthetic nanostructured magnonic crystal composed of two different magnetic materials. The sample, in the form of a one-dimensional periodic array comprising alternating Permalloy and cobalt nanostripes, has been fabricated using advanced lithographic techniques. Dispersion relations of spin waves in the magnonic crystal have been mapped by Brillouin spectroscopy. The center frequency and width of the band gaps observed are tunable by an applied magnetic field. Dispersion relations calculated based on the finite element method accord with the measured data.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.35.+c Brillouin and Rayleigh scattering; other light scattering
81.16.Nd Micro- and nanolithography
75.30.Ds Spin waves
75.50.Tt Fine-particle systems; nanocrystalline materials

Nanophotonic energy up conversion using ZnO nanorod double-quantum-well structures

T. Yatsui, S. Sangu, K. Kobayashi, T. Kawazoe, M. Ohtsu, J. Yoo, and G.-C. Yi

Appl. Phys. Lett. 94, 083113 (2009); http://dx.doi.org/10.1063/1.3090491 (3 pages) | Cited 5 times

Online Publication Date: 27 February 2009

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We report on near-field spectroscopy of ZnO/ZnMgO nanorod double-quantum-well structures (DQWs) for a nanometer-scale photonic device. We observed energy up conversion assisted by the absorption of phonons generated in the ZnO nanorod DQWs. Theoretical calculation of the coherent excitonic excitation of the population with incoherent phonon coupling agrees well with the obtained experimental power dependence of the up conversion efficiency. It should result in an increase in the efficiency of devices, such as photodetectors, solar cells, and so on.
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63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
71.35.-y Excitons and related phenomena
73.21.Fg Quantum wells
68.65.Fg Quantum wells
78.67.De Quantum wells
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)

Regularization of pattern formation in heteroepitaxial thin films through surface diffusivity modulation

Y. Y. Kim, S. S. Kulkarni, and S. Krishnaswamy

Appl. Phys. Lett. 94, 083114 (2009); http://dx.doi.org/10.1063/1.3091403 (3 pages) | Cited 2 times

Online Publication Date: 27 February 2009

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A numerical study is presented to demonstrate the influence of local diffusion variation during laser-thermal treatment on the growth dynamics of silicon-germanium thin films. A surface morphology evolution equation is developed with the assumption that the diffusivity is a spatially varying function induced by a sinusoidal surface temperature profile. Results show that an initially flat film evolves into patterns through the thermal modulation, indicating that the growth can be controlled by enhancing local diffusivity. The present study is expected to provide a path for future laser-annealing experiments to produce regularized quantum dots.
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68.55.ag Semiconductors
66.30.Pa Diffusion in nanoscale solids
68.35.bg Semiconductors
68.35.Fx Diffusion; interface formation
81.07.Ta Quantum dots
81.65.-b Surface treatments
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