Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers

Kuo, Yen-Kuang; Chang, Jih-Yuan; Tsai, Miao-Chan; Yen, Sheng-Horng

doi:doi:10.1063/1.3176406

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Controlling enhanced transmission through semiconductor gratings with subwavelength slits by a magnetic field: Numerical and analytical results

We exploit the change in the permittivity tensor of a conductor by a static magnetic field as a handle to control enhanced transmission in a semiconductor grating. Numerically, results of rigorous coupled-wave analysis (RCWA) incorporating the tensorial permittivity reveal that zeroth order transmission peaks at normal incidence can be shifted by about 15% to longer wavelengths and the peak values of transmission readily doubled when a moderate magnetic field is applied. Analytically, a single-...

Polarization control of 1.6 μm vertical-cavity surface-emitting lasers using InAs quantum dashes on InP(001)

The authors report the demonstration of a polarization-controlled vertical-cavity surface-emitting laser (VCSEL), emitting at the telecommunication wavelength. VCSELs are based on an active medium constituted of well elongated InAs quantum dashes (QDHs) nanostructures grown on conventional (001) oriented InP substrate. QDHs present important optical polarization anisotropies according to the [10] crystallographic orientation. Inserted into a VCSEL microcavity, QDH VCSELs show a continuous wave ...

The advantages of blue InGaN light-emitting diodes (LEDs) with InGaN barriers are studied. The L-I curves, carrier concentrations in the quantum wells, energy band diagrams, and internal quantum efficiency are investigated. The simulation results show that the InGaN/InGaN LED has better performance over its conventional InGaN/GaN counterpart due to the enhancement of electron confinement, the reduced polarization effect between the barrier and well, and the lower potential barrier height for the holes to transport in the active region. The simulation results also suggest that the efficiency droop is markedly improved when the traditional GaN barriers are replaced by InGaN barriers.

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KEYWORDS and PACS

Keywords

carrier density, gallium compounds, III-V semiconductors, indium compounds, light emitting diodes, polarisation, semiconductor quantum wells, wide band gap semiconductors

PACS

85.60.Jb

Light-emitting devices
81.07.St

Quantum wells
81.05.Ea

III-V semiconductors

ARTICLE DATA

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http://dx.doi.org/10.1063/1.3176406

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0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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