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Appl. Phys. Lett. 95, 101109 (2009); http://dx.doi.org/10.1063/1.3225148 (3 pages)
Combined optical trapping and microphotoluminescence of single InP nanowires
(Received 1 July 2009; accepted 16 August 2009; published online 11 September 2009)
© 2009 American Institute of Physics
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KEYWORDS and PACS
Keywords
III-V semiconductors, indium compounds, MOCVD, nanowires, photoluminescence, radiation pressure, semiconductor quantum wires, stacking faults, suspensions
PACS
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Quantum wires
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III-V semiconductors
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Quantum wires (patterned in quantum wells)
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Quantum wires
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Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
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Stacking faults and other planar or extended defects
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Emulsions and suspensions
ARTICLE DATA
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M. Paladugu, J. Zou, Y. N. Guo, X. Zhang, Y. Kim, H. J. Joyce, Q. Gao, H. H. Tan, and C. Jagadish, Appl. Phys. Lett. 93, 101911 (2008)APPLAB000093000010101911000001.
J. L. Hernandez-Pozos, W. M. Lee, L. I. Vera-Robles, A. Campero, and K. Dholakia, Appl. Phys. Lett. 93, 243107 (2008)APPLAB000093000024243107000001.
A. Rohrbach, Phys. Rev. Lett. 95, 168102 (2005).
H. E. Ruda and A. Shik, Phys. Rev. B 72, 115308 (2005).
A. Mishra, L. V. Titova, T. B. Hoang, H. E. Jackson, L. M. Smith, J. M. Yarrison-Rice, Y. Kim, H. J. Joyce, Q. Gao, H. H. Tan, and C. Jagadish, Appl. Phys. Lett. 91, 263104 (2007)APPLAB000091000026263104000001.
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