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Appl. Phys. Lett. 95, 101110 (2009); http://dx.doi.org/10.1063/1.3222974 (3 pages)

Nanoscale band gap spectroscopy on ZnO and GaN-based compounds with a monochromated electron microscope

M. Bosman1, L. J. Tang1, J. D. Ye1, S. T. Tan1, Y. Zhang1, and V. J. Keast2

1Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), 11 Science Park Road, Singapore 117685, Singapore
2School of Mathematical and Physical Sciences, The University of Newcastle, Callaghan, New South Wales 2308, Australia

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(Received 1 August 2009; accepted 16 August 2009; published online 11 September 2009)

Monochromated low-loss EELS (electron energy-loss spectroscopy) is explored as an analytical technique for nanoscale mapping of the electronic band gap energy on arsenic-implanted ZnO, CdZnO, and InGaN compounds. Its accuracy is confirmed independently with Raman spectroscopy. From a ternary compound, the relationship between the band gap energy and the chemical composition is determined, a powerful application of low-loss EELS. The effects of electron beam delocalization are discussed using examples from In0.25Ga0.75N quantum wells.

© 2009 American Institute of Physics

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0003-6951 (print)  
1077-3118 (online)

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