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Appl. Phys. Lett. 95, 101110 (2009); http://dx.doi.org/10.1063/1.3222974 (3 pages)
Nanoscale band gap spectroscopy on ZnO and GaN-based compounds with a monochromated electron microscope
(Received 1 August 2009; accepted 16 August 2009; published online 11 September 2009)
© 2009 American Institute of Physics
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KEYWORDS and PACS
Keywords
arsenic, cadmium compounds, doping profiles, electron energy loss spectra, energy gap, gallium compounds, III-V semiconductors, II-VI semiconductors, indium compounds, ion implantation, nanostructured materials, Raman spectra, scanning electron microscopy, semiconductor doping, semiconductor quantum wells, transmission electron microscopy, wide band gap semiconductors, zinc compounds
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