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7 Sep 2009

Volume 95, Issue 10, Articles (10xxxx)

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Appl. Phys. Lett. 95, 083506 (2009); http://dx.doi.org/10.1063/1.3216851 (3 pages)

J. Z. Sun, M. C. Gaidis, E. J. O’Sullivan, E. A. Joseph, G. Hu, D. W. Abraham, J. J. Nowak, P. L. Trouilloud, Yu Lu, S. L. Brown, D. C. Worledge, and W. J. Gallagher

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Compositional influence on sol-gel-derived amorphous oxide semiconductor thin film transistors

Dongjo Kim, Chang Young Koo, Keunkyu Song, Youngmin Jeong, and Jooho Moon

Appl. Phys. Lett. 95, 103501 (2009); http://dx.doi.org/10.1063/1.3225555 (3 pages) | Cited 24 times

Online Publication Date: 8 September 2009

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We investigated the influence of the chemical compositions of gallium and indium cations on the performance of sol-gel-derived amorphous gallium indium zinc oxide (a-GIZO)-based thin film transistors (TFTs). A systematic compositional study allowed us to understand the solution-processed a-GIZO TFTs. We generated a compositional ternary diagram from which we could predict electrical parameters such as saturation mobility, threshold voltage, and the on/off current ratio as the constituent compositions varied. This diagram can be utilized for tailoring solution-processed amorphous oxide TFTs for specific applications.
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85.30.Tv Field effect devices
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.05.Gc Amorphous semiconductors
81.05.Ea III-V semiconductors

Power gain up to gigahertz frequencies in three-terminal nanojunctions at room temperature

D. Spanheimer, C. R. Müller, J. Heinrich, S. Höfling, L. Worschech, and A. Forchel

Appl. Phys. Lett. 95, 103502 (2009); http://dx.doi.org/10.1063/1.3222941 (3 pages) | Cited 5 times

Online Publication Date: 8 September 2009

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Direct current and alternating current characteristics of three-terminal nanojunctions (TTJs) are studied at room temperature. The TTJs are based on a modulation-doped GaAs/AlGaAs heterostructure and were structured by applying mask techniques and wet chemical etching. Devices with lateral dimensions of a few tens of nanometers and with narrow gold contacts were fabricated and transistor characteristics with maximum transconductance values exceeding 100 μA/V are demonstrated. By analyzing the scattering parameters of the TTJs, power gain up to 1.5 GHz is observed. This gigahertz amplification is related to the implemented narrow gold contacts which control the quantum capacitance of the electron reservoirs.
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85.35.-p Nanoelectronic devices
81.65.Cf Surface cleaning, etching, patterning
85.40.Hp Lithography, masks and pattern transfer
73.40.Ns Metal-nonmetal contacts
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Energy resolved spin dependent tunneling in 1.2 nm dielectrics

J. T. Ryan, P. M. Lenahan, A. T. Krishnan, and S. Krishnan

Appl. Phys. Lett. 95, 103503 (2009); http://dx.doi.org/10.1063/1.3226633 (3 pages) | Cited 5 times

Online Publication Date: 11 September 2009

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We demonstrate an electron paramagnetic resonance technique which simply links point defect structure and energy levels in a very direct way. The technique’s simplicity and the robust character of the response make it, at least potentially, of widespread utility in the understanding of defects important in solid state electronics. Since the specific defect observed is generated in silicon oxynitride by high electric field stressing, an important device instability problem in present day integrated circuitry, the observations are of considerable importance for microelectronics technology.
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73.40.Gk Tunneling
76.30.Mi Color centers and other defects
71.55.-i Impurity and defect levels
61.72.J- Point defects and defect clusters
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