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7 Sep 2009

Volume 95, Issue 10, Articles (10xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 95, 083506 (2009); http://dx.doi.org/10.1063/1.3216851 (3 pages)

J. Z. Sun, M. C. Gaidis, E. J. O’Sullivan, E. A. Joseph, G. Hu, D. W. Abraham, J. J. Nowak, P. L. Trouilloud, Yu Lu, S. L. Brown, D. C. Worledge, and W. J. Gallagher

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Combined electric field and stress-induced R-O phase transformation in [011]-poled Pb(Mg1/3Nb2/3)O3–(28–32)%PbTiO3 single crystals of [01math]-length cut

M. Shanthi and L. C. Lim

Appl. Phys. Lett. 95, 102901 (2009); http://dx.doi.org/10.1063/1.3222870 (3 pages) | Cited 7 times

Online Publication Date: 8 September 2009

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The combined effects of applied electric field and axial compressive stress on the strain behavior of [011]-poled Pb(Mg1/3Nb2/3)O3–(28–32)%PbTiO3 [PMN-(28–32)%PT] single crystals of [01math]-length cut have been investigated. For this crystal cut, the axial compressive stress has little effect on the R-O transformation field, the latter being >1.0 kV/mm for PMN-(28–30)%PT. This crystal cut is thus ideal for applications involving large electric field and axial compressive stress.
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64.70.K- Solid-solid transitions
77.80.B- Phase transitions and Curie point
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.-j Piezoelectricity and electromechanical effects

Polarization retention of thin ferroelectricya capacitors

Youn Jung Park, Jiyoun Chang, Seok Ju Kang, and Cheolmin Park

Appl. Phys. Lett. 95, 102902 (2009); http://dx.doi.org/10.1063/1.3216053 (3 pages) | Cited 5 times

Online Publication Date: 9 September 2009

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Excellent retention of the initial remanent polarizations was observed in ca. 200 nm thick ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) film capacitors with the writing pulse amplitude and time width of ±20 V and 1 ms, respectively, over 200 h at 80 °C. The opposite state program turned out more sensitive to retention deterioration than the same state one in both switching and nonswitching mode when either writing pulse amplitude or time width decreases. Nonswitching retention in the opposite state mode is in particular one of the most critical properties for designing a ferroelectric polymer capacitor memory.
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84.32.Tt Capacitors
85.50.Gk Non-volatile ferroelectric memories

Unstable state in epitaxial films of sodium niobate

M. Tyunina and J. Levoska

Appl. Phys. Lett. 95, 102903 (2009); http://dx.doi.org/10.1063/1.3222900 (3 pages) | Cited 7 times

Online Publication Date: 10 September 2009

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Epitaxial perovskite-type films of sodium niobate were grown by pulsed laser deposition, and their crystal structure and dielectric properties were experimentally studied. The dielectric permittivity, inverse permittivity and its derivative, and dielectric hysteresis were analyzed and compared with those of antiferroelectric lead zirconate films. At temperatures in the interval of 80–600 K, the state of the sodium niobate films with relaxed misfit strain is interpreted as an unstable coexistence of antiferroelectric and ferroelectric phases. The origin of the ferroelectric phase is discussed.
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77.80.Dj Domain structure; hysteresis
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Fg Pulsed laser ablation deposition
77.22.Ch Permittivity (dielectric function)
68.55.-a Thin film structure and morphology

Enhanced piezoelectric and ferroelectric properties in Mn-doped Na0.5Bi0.5TiO3–BaTiO3 single crystals

Qinhui Zhang, Yaoyao Zhang, Feifei Wang, Yaojin Wang, Di Lin, Xiangyong Zhao, Haosu Luo, Wenwei Ge, and D. Viehland

Appl. Phys. Lett. 95, 102904 (2009); http://dx.doi.org/10.1063/1.3222942 (3 pages) | Cited 32 times

Online Publication Date: 10 September 2009

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High piezoelectric and ferroelectric properties have been found in Mn-doped Na0.5Bi0.5TiO3–BaTiO3 single crystals, which were grown by a top-seeded solution method. The electrical resistivity, dielectric constant, and ferroelectric and piezoelectric properties were all found to be notably enhanced by Mn. The piezoelectric constant d33 and electromechanical coupling coefficients kt and k31 were found to be as high as 483 pC/N, 0.56, and 0.40, respectively. These values are much higher than those previously reported for Pb-free piezoelectric crystals, demonstrating the real potential for alternative lead-free systems for sensor and piezoelectric applications.
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77.65.Bn Piezoelectric and electrostrictive constants
72.80.Sk Insulators
77.80.Fm Switching phenomena
77.22.Ch Permittivity (dielectric function)
81.10.Dn Growth from solutions
77.22.Ej Polarization and depolarization
77.80.B- Phase transitions and Curie point

Density functional calculations on atomic and electronic structures of amorphous HfO2/Si(001) interface

G. H. Chen, Z. F. Hou, and X. G. Gong

Appl. Phys. Lett. 95, 102905 (2009); http://dx.doi.org/10.1063/1.3226636 (3 pages) | Cited 2 times

Online Publication Date: 10 September 2009

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The interface properties of amorphous hafnium dioxide (a-HfO2) in contact with silicon have been investigated by using the projector augmented wave method within the generalized gradient approximation. The a-HfO2 model structure of the interface is generated by ab initio molecular dynamics simulations in a melt-and-quench scheme. Calculations indicate that the simulated a-HfO2 essentially shows the characteristics of the experimental a-HfO2 structure. The results on a-HfO2/Si interface suggest that atomic coordination of interface Si atoms would significantly affect the interface electronic properties, e.g., the Hf–Si bond formed at the interface could result in metallic behavior. With band lineup of the core level, the valence band offset of a-HfO2/Si interface is determined to be 2.62±0.35 eV, in good agreement with recent experimental data.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
61.66.Fn Inorganic compounds
73.20.-r Electron states at surfaces and interfaces
61.50.Lt Crystal binding; cohesive energy
71.15.Pd Molecular dynamics calculations (Car-Parrinello) and other numerical simulations
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