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7 Sep 2009

Volume 95, Issue 10, Articles (10xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 95, 083506 (2009); http://dx.doi.org/10.1063/1.3216851 (3 pages)

J. Z. Sun, M. C. Gaidis, E. J. O’Sullivan, E. A. Joseph, G. Hu, D. W. Abraham, J. J. Nowak, P. L. Trouilloud, Yu Lu, S. L. Brown, D. C. Worledge, and W. J. Gallagher

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Room temperature ferromagnetism of bulk polycrystalline (In0.85−xSnxFe0.15)2O3: Charge carrier mediated or oxygen vacancy mediated?

S. C. Li, P. Ren, B. C. Zhao, B. Xia, and L. Wang

Appl. Phys. Lett. 95, 102101 (2009); http://dx.doi.org/10.1063/1.3222867 (3 pages) | Cited 7 times

Online Publication Date: 8 September 2009

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Four bulk polycrystalline (In0.85−xSnxFe0.15)2O3 samples with x = 0, 0.01, 0.03, and 0.05 were synthesized, where carrier concentration n was controlled by varying Sn doping concentration x. Strong room temperature ferromagnetism was observed. A systematic characterization and analysis of structure, purity, magnetic, and transport properties indicates that ferromagnetism is due to neither impurities nor charge carriers. The four samples were annealed in air and high vacuum alternately. The ferromagnetism signal disappears and appears accordingly. Based on these results, we conclude that room temperature ferromagnetism in (In0.85−xSnxFe0.15)2O3 system is closely and directly related to oxygen vacancies in the samples.
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61.72.jd Vacancies
61.72.up Other materials
75.50.Pp Magnetic semiconductors
81.05.Hd Other semiconductors
72.80.Jc Other crystalline inorganic semiconductors
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
61.72.Cc Kinetics of defect formation and annealing
72.20.Fr Low-field transport and mobility; piezoresistance

Amorphous carbon and carbon nitride bottom gate thin film transistors

Y. Miyajima, M. Shkunov, and S. R. P. Silva

Appl. Phys. Lett. 95, 102102 (2009); http://dx.doi.org/10.1063/1.3224834 (3 pages) | Cited 7 times

Online Publication Date: 9 September 2009

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Carbon based bottom gate thin film transistors were fabricated using pulsed laser deposited amorphous carbon (a-C) and amorphous carbon nitride (a-CNx) films. Both series of devices show p-type conduction in the active channel at high electric fields, for which the conduction mechanism may be fitted to Poole–Frenkel type behavior. The field effect mobilities were estimated to values of 2.5×10−3 cm2 V−1 S−1 at high fields. Nitrogen inclusion does not appear to affect the performance of the a-CNx at high fields since the current is postulated to be controlled by hole conduction states.
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85.30.Tv Field effect devices
61.43.Er Other amorphous solids
81.15.Fg Pulsed laser ablation deposition
66.30.H- Self-diffusion and ionic conduction in nonmetals
72.20.Ht High-field and nonlinear effects
73.50.Fq High-field and nonlinear effects
61.72.Qq Microscopic defects (voids, inclusions, etc.)
71.20.Ps Other inorganic compounds

Graphene on gallium arsenide: Engineering the visibility

M. Friedemann, K. Pierz, R. Stosch, and F. J. Ahlers

Appl. Phys. Lett. 95, 102103 (2009); http://dx.doi.org/10.1063/1.3224910 (3 pages) | Cited 7 times

Online Publication Date: 9 September 2009

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Graphene consists of single or few layers of crystalline ordered carbon atoms. Its visibility on oxidized silicon (Si/SiO2) enabled its discovery and spawned numerous studies of its unique electronic properties. The combination of graphene with the equally unique electronic material gallium arsenide (GaAs) has up to now lacked such easy visibility. Here we demonstrate that a deliberately tailored GaAs-aluminum arsenide (AlAs) multilayer structure makes graphene just as visible on GaAs as on Si/SiO2. We show that standard microscope images of exfoliated graphite on GaAs/AlAs suffice to identify mono-, bi-, and multilayers of graphene. Raman data confirm our results.
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78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
71.20.Tx Fullerenes and related materials; intercalation compounds
78.30.Na Fullerenes and related materials
73.21.Ac Multilayers

Investigation on −c-InN and a-InN:Mg field effect transistors under electrolyte gate bias

Yen-Sheng Lu, Yuh-Hwa Chang, Yu-Liang Hong, Hong-Mao Lee, Shangjr Gwo, and J. Andrew Yeh

Appl. Phys. Lett. 95, 102104 (2009); http://dx.doi.org/10.1063/1.3216064 (3 pages) | Cited 1 time

Online Publication Date: 9 September 2009

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The electrical properties of N-polar undoped InN and nonpolar a-InN:Mg ion sensitive field effect transistors (ISFETs) have been investigated by electrolyte-gate-biased current-voltage (IDS-VGS) measurements. IDS-VGS characteristics reveal that the a-InN:Mg ISFETs have a large ( ∼ 52%) current variation ratio at a gate bias of 0.3 V with respect to the unbiased one, which is higher than that from the undoped InN ISFETs ( ∼ 18% and <0.1% for 10-nm and 1-μm-thick −c-InN epilayers, respectively). The a-InN:Mg ISFETs can also function as a pH sensor with a sensitivity of 56.5 mV/pH and a response time less than 10 s.
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85.30.Tv Field effect devices
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Nanofluidic electrokinetics in nanoparticle crystal

Zhen Chen, Yunshan Wang, Wei Wang, and Zhihong Li

Appl. Phys. Lett. 95, 102105 (2009); http://dx.doi.org/10.1063/1.3223774 (3 pages) | Cited 6 times

Online Publication Date: 9 September 2009

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We scrutinize experimentally and theoretically the electrokinetics of a nanochannel network in a nanoparticle crystal. Conductance of the nanochannel network, a function of concentrations of the loaded electrolyte solutions, exhibits typical electrokinetic properties of individual nanochannel but with a much larger electrical signal. A widely accepted electrokinetic equation is used to elucidate the origin of the high throughput from a top-down perspective. Using a bottom-up analysis, a stepwise modeling process from individual nanochannel to highly ordered nanochannel network is proposed to render an in-depth view of the nanofluidics network.
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47.61.Fg Flows in micro-electromechanical systems (MEMS) and nano-electromechanical systems (NEMS)
47.60.Dx Flows in ducts and channels
47.85.Np Fluidics
82.45.Gj Electrolytes

Subband transitions in dual-band n-B-n InAs/GaSb superlattice infrared photodetector identified by photoresponse spectra

S. J. Lee, S. K. Noh, E. Plis, S. Krishna, and K.-S. Lee

Appl. Phys. Lett. 95, 102106 (2009); http://dx.doi.org/10.1063/1.3212738 (3 pages) | Cited 5 times

Online Publication Date: 9 September 2009

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The subband transitions in dual-band n-B-n InAs/GaSb type-II superlattice infrared photodetector are identified by the photoresponse (PR) spectra. In the mid- and long-wavelength PR spectra measured by changing bias polarity, each spectrum individually shows a series of distinctive peaks related to the transitions from the hole subbands to the conduction one. The PR mechanism at each polarity is discussed in terms of diffusion and tunneling currents.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd2O3

V. V. Afanas’ev, M. Badylevich, A. Stesmans, A. Laha, H. J. Osten, and A. Fissel

Appl. Phys. Lett. 95, 102107 (2009); http://dx.doi.org/10.1063/1.3204019 (3 pages) | Cited 3 times

Online Publication Date: 9 September 2009

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Silicon nanocrystals embedded in a lattice-matched Gd2O3 matrix exhibit large size-dependent bandgap widening. Measurements of photocharging spectra of these crystals indicate only a marginal variation in the photoionization threshold energy. The latter suggests that most of the confinement-induced bandgap width variation is caused by the upward shift of the Si nanocrystal conduction band bottom.
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73.20.At Surface states, band structure, electron density of states
71.20.Mq Elemental semiconductors
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
72.40.+w Photoconduction and photovoltaic effects

Pseudospin filter for graphene via laser irradiation

J. C. Martinez, M. B. A. Jalil, and S. G. Tan

Appl. Phys. Lett. 95, 102108 (2009); http://dx.doi.org/10.1063/1.3220067 (3 pages) | Cited 2 times

Online Publication Date: 10 September 2009

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We study graphene monolayer charge carriers irradiated by an electromagnetic vortex. From this, two scenarios are envisaged: canonical oscillator coherent states, which form for large particle numbers and from which a sublattice filter can be constructed, and pair-coherent states, which emerge when the carrier velocity is much less than the Fermi velocity and which can exhibit nonclassical properties. The first should be useful in the control (e.g., confinement and guided transport) of graphene electrons, while the second provides a physical system for examining nonclassical properties of wave packets.
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73.63.Bd Nanocrystalline materials
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
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