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7 Sep 2009

Volume 95, Issue 10, Articles (10xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 95, 083506 (2009); http://dx.doi.org/10.1063/1.3216851 (3 pages)

J. Z. Sun, M. C. Gaidis, E. J. O’Sullivan, E. A. Joseph, G. Hu, D. W. Abraham, J. J. Nowak, P. L. Trouilloud, Yu Lu, S. L. Brown, D. C. Worledge, and W. J. Gallagher

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Characterization of terahertz emission from a dc-biased filament in air

Yanping Chen, Tie-jun Wang, Claude Marceau, Francis Théberge, Marc Châteauneuf, Jacques Dubois, Olga Kosareva, and See Leang Chin

Appl. Phys. Lett. 95, 101101 (2009); http://dx.doi.org/10.1063/1.3224944 (3 pages) | Cited 7 times

Online Publication Date: 8 September 2009

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We demonstrate that the terahertz emission from a dc-biased filament can be regarded as a sum of an elliptically polarized terahertz source (generated by a filament without external electric field) and a linearly polarized terahertz source induced by the external electric field applied to the filament. The peak frequency and linewidth of the linearly polarized terahertz source are related to the average plasma density of the filament.
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52.25.-b Plasma properties

Active control of surface plasmon polaritons by optical isomerization of an azobenzene polymer film

D. G. Zhang, X.-C. Yuan, A. Bouhelier, G. H. Yuan, P. Wang, and H. Ming

Appl. Phys. Lett. 95, 101102 (2009); http://dx.doi.org/10.1063/1.3225156 (3 pages) | Cited 10 times

Online Publication Date: 8 September 2009

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Active control of surface plasmon polaritons (SPPs) by optical isomerization of an azobenzene polymer film is proposed and demonstrated in this letter. A tightly focused 532 nm laser beam was used to change the wave number of the SPPs and a separate unpolarized light source was employed to erase the change, forming one cycle of the control. The largest change of the SPPs wave number obtained in the experiments is about 0.0382K0 in the case of 54 nm thickness azo-polymer film. Validity of this method is confirmed by consistence between theoretical and experimental results.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
42.70.Jk Polymers and organics
82.30.Qt Isomerization and rearrangement
78.66.Qn Polymers; organic compounds

Strong improvement in the photonic stop-band edge sharpness of a lithium niobate photonic crystal slab

S. Diziain, S. Harada, R. Salut, P. Muralt, and M.-P. Bernal

Appl. Phys. Lett. 95, 101103 (2009); http://dx.doi.org/10.1063/1.3223595 (3 pages) | Cited 5 times

Online Publication Date: 8 September 2009

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We report on a photonic crystal (PhC) etched into a 380 nm thick lithium niobate (LN) thin film deposited on a MgO substrate by pulsed laser deposition. The transmission properties of this device were assessed by optical near-field measurements and compared to the transmission spectra of the same PhC drilled into bulk LN and calculated by a two dimensional finite-difference time domain method. We show a strong improvement in the transmission properties of the LN PhC by etching it into a thin layer rather than into a 500 μm thick wafer. This result appears to be very promising for applications based on LN tunable PhCs.
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42.70.Qs Photonic bandgap materials
81.15.Fg Pulsed laser ablation deposition

High-speed all-optical modulation of a standard quantum cascade laser by front facet illumination

Gang Chen, Clyde G. Bethea, Rainer Martini, P. D. Grant, R. Dudek, and H. C. Liu

Appl. Phys. Lett. 95, 101104 (2009); http://dx.doi.org/10.1063/1.3223597 (3 pages) | Cited 5 times

Online Publication Date: 8 September 2009

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A simple experimental scheme to control intersubband lasing transition by optically induced nonresonant interband transition is presented, allowing for high-speed all-optical modulation of mid-infrared (MIR) quantum cascade laser (QCL). Illuminating the QCL front facet with 100 fs Ti:sapphire laser pulse, a fast modulation of a cw-MIR emission is observed with an estimated transient time of less than 81 ps, limited by instrument bandwidth, and a modulation depth of 18%. It has a great potential for high-speed modulation of high power QCL at room temperature.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.By Design of specific laser systems

Verification of p-n junctions in polymer light-emitting electrochemical cells via electrical characterization

Yueqing Lei, Feng Teng, Yanbing Hou, Zhidong Lou, and Yongsheng Wang

Appl. Phys. Lett. 95, 101105 (2009); http://dx.doi.org/10.1063/1.3224178 (3 pages) | Cited 2 times

Online Publication Date: 8 September 2009

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We report micrometer thick sandwich light-emitting electrochemical cells (LECs) based on a blend of poly[5-(2′-ethylhexyloxy)-2-methoxy-1, 4-phenylene vinylene] and poly(ethylene oxide) complexed with lithium trifluoromethanesulfonate. These LECs exhibit very similar properties as those of thin LECs including bipolar current-voltage characteristics and light emission. Mixing of aluminum nanoparticles into polymer layers improves electroluminescence because of smaller series resistance and larger light-emitting area. Taking series resistance into account, we confirm the operating mechanism of an LEC is the formation of a p-n junction by in situ electrochemical doping via fitting the steady state current-voltage characteristics to the expression for the Shockley model of a p-n diode.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
64.75.Ef Mixing
82.45.Wx Polymers and organic materials in electrochemistry
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN

X. Ni, J. Lee, M. Wu, X. Li, R. Shimada, Ü. Özgür, A. A. Baski, H. Morkoç, T. Paskova, G. Mulholland, and K. R. Evans

Appl. Phys. Lett. 95, 101106 (2009); http://dx.doi.org/10.1063/1.3224192 (3 pages) | Cited 8 times

Online Publication Date: 8 September 2009

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We investigated internal quantum efficiency (IQE) of polar (0001) InGaN on c-sapphire, and (1math00) nonpolar m-plane InGaN on both m-plane GaN and specially patterned Si. The IQE values were extracted from the resonant photoluminescence intensity versus the excitation power. Data indicate that at comparable generated carrier concentrations the efficiency of the m-plane InGaN on patterned Si is approximately a factor of 2 higher than that of the highly optimized c-plane layer. At the highest laser excitation employed ( ∼ 1.2×1018 cm−3), the IQE of m-plane InGaN double heterostructure on Si is approximately 65%. We believe that the m-plane would remain inherently advantageous, particularly at high electrical injection levels, even with respect to highly optimized c-plane varieties. The observations could be attributed to the lack of polarization induced field and the predicted increased optical matrix elements in m-plane orientation.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.55.Cr III-V semiconductors
72.20.Ht High-field and nonlinear effects
72.80.Ey III-V and II-VI semiconductors

Submicron ionography of nanostructures using a femtosecond-laser-driven-cluster-based source

A. Ya. Faenov, T. A. Pikuz, Y. Fukuda, M. Kando, H. Kotaki, T. Homma, K. Kawase, T. Kameshima, A. Pirozhkov, A. Yogo, M. Tampo, M. Mori, H. Sakaki, Y. Hayashi, T. Nakamura, et al.

Appl. Phys. Lett. 95, 101107 (2009); http://dx.doi.org/10.1063/1.3210785 (3 pages) | Cited 5 times

Online Publication Date: 9 September 2009

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An intense isotropic source of multicharged carbon and oxygen ions with energy above 300 keV and particle number >108 per shot was obtained by femtosecond Ti:Sa laser irradiation of submicron clusters. The source was employed for high-contrast contact ionography images with 600 nm spatial resolution. A variation in object thickness of 100 nm was well resolved for both Zr and polymer foils.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
42.55.Rz Doped-insulator lasers and other solid state lasers

Controlling the directional emission of holey organic microlasers

N. Djellali, I. Gozhyk, D. Owens, S. Lozenko, M. Lebental, J. Lautru, C. Ulysse, B. Kippelen, and J. Zyss

Appl. Phys. Lett. 95, 101108 (2009); http://dx.doi.org/10.1063/1.3205474 (3 pages) | Cited 3 times

Online Publication Date: 10 September 2009

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The far-field pattern of stadium-shaped organic microlasers is strongly modified by introducing circular air vacancies within the cavity, so as to control it in a predictive way. Experimental results are in good agreement with geometrical optics predictions whereas spectral properties of emission are investigated to improve the understanding of the lasing modes.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems

Combined optical trapping and microphotoluminescence of single InP nanowires

Peter J. Reece, Suriati Paiman, Osama Abdul-Nabi, Qiang Gao, Michael Gal, H. Hoe Tan, and C. Jagadish

Appl. Phys. Lett. 95, 101109 (2009); http://dx.doi.org/10.1063/1.3225148 (3 pages) | Cited 5 times

Online Publication Date: 11 September 2009

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In this letter, we demonstrate that microphotoluminescence may be combined with optical trapping for effective optical characterization of single target InP semiconductor nanowires in suspension. Using this technique, we may investigate structural properties of optically trapped nanowires, such as crystalline polytypes and stacking faults. This arrangement may also be used to resolve structural variations along the axis of the trapped nanowire. These results show that photoluminescence measurements may be coupled with optical tweezers without degrading the performance of the optical trap and provide a powerful interrogation tool for preselection of components for nanowire photonic devices.
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78.67.Lt Quantum wires
78.55.Cr III-V semiconductors
68.65.La Quantum wires (patterned in quantum wells)
81.07.Vb Quantum wires
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.Nn Stacking faults and other planar or extended defects
82.70.Kj Emulsions and suspensions

Nanoscale band gap spectroscopy on ZnO and GaN-based compounds with a monochromated electron microscope

M. Bosman, L. J. Tang, J. D. Ye, S. T. Tan, Y. Zhang, and V. J. Keast

Appl. Phys. Lett. 95, 101110 (2009); http://dx.doi.org/10.1063/1.3222974 (3 pages) | Cited 2 times

Online Publication Date: 11 September 2009

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Monochromated low-loss EELS (electron energy-loss spectroscopy) is explored as an analytical technique for nanoscale mapping of the electronic band gap energy on arsenic-implanted ZnO, CdZnO, and InGaN compounds. Its accuracy is confirmed independently with Raman spectroscopy. From a ternary compound, the relationship between the band gap energy and the chemical composition is determined, a powerful application of low-loss EELS. The effects of electron beam delocalization are discussed using examples from In0.25Ga0.75N quantum wells.
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78.30.Fs III-V and II-VI semiconductors
78.67.De Quantum wells
73.21.Fg Quantum wells
61.72.uj III-V and II-VI semiconductors
79.20.Uv Electron energy loss spectroscopy
71.20.Nr Semiconductor compounds

Self-pulsing 1050 nm quantum dot edge emitting laser diodes

Haoling Liu, Peter Smowton, Huw Summers, Gareth Edwards, and Wolfgang Drexler

Appl. Phys. Lett. 95, 101111 (2009); http://dx.doi.org/10.1063/1.3227654 (3 pages) | Cited 1 time

Online Publication Date: 11 September 2009

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We examine self-pulsing, edge emitting, quantum dot laser diodes as continuous broad spectrum light sources emitting at ∼ 1050 nm. Devices are configured with split contacts. When operated without a saturable absorber, the laser emits a number of discrete narrow modes, which merge to form a broad continuous lasing spectrum on application of the saturable absorber. The broadened spectra are consistent with the modulated carrier density expected under Q-switched operation. This provides a simple technique for generating emission suitable for biomedical applications. The spectral width achieved is ∼ 10 nm, and the average output power is 7.5 mW.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.50.Gy Effects of atomic coherence on propagation, absorption, and amplification of light; electromagnetically induced transparency and absorption
42.55.Rz Doped-insulator lasers and other solid state lasers
42.72.-g Optical sources and standards
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