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7 Sep 2009

Volume 95, Issue 10, Articles (10xxxx)

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Appl. Phys. Lett. 95, 083506 (2009); http://dx.doi.org/10.1063/1.3216851 (3 pages)

J. Z. Sun, M. C. Gaidis, E. J. O’Sullivan, E. A. Joseph, G. Hu, D. W. Abraham, J. J. Nowak, P. L. Trouilloud, Yu Lu, S. L. Brown, D. C. Worledge, and W. J. Gallagher

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Low-voltage operation of n-type organic field-effect transistors with ionic liquid

T. Uemura, M. Yamagishi, S. Ono, and J. Takeya

Appl. Phys. Lett. 95, 103301 (2009); http://dx.doi.org/10.1063/1.3225153 (3 pages) | Cited 15 times

Online Publication Date: 8 September 2009

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High performance n-type organic field-effect transistors are developed to achieve high transconductance and low-threshold voltage using ionic-liquid electrolyte for intense electrostatic gating. Tetracyanoquinodimethane single crystals and C60 thin films are interfaced with ionic liquid of 1-ethyl-3-methyl-imidazolium bis(trifluoromethanesulfonyl)imide known for its low viscosity and high ionic conductivity, so that high-density electrons are rapidly accumulated in the semiconductor surfaces with the application of minimum gate voltages, forming 1-nm thick electric double layers to concentrate electric field as high as 1 MV/cm. The C60 transistor shows the highest normalized transconductance among reported n-type organic transistors, together with minimum threshold voltage.
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85.30.Tv Field effect devices
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Ordering of pentacene in organic thin film transistors induced by irradiation of infrared light

C. H. Wang, S. W. Chen, and J. Hwang

Appl. Phys. Lett. 95, 103302 (2009); http://dx.doi.org/10.1063/1.3222979 (3 pages) | Cited 1 time

Online Publication Date: 8 September 2009

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The device performances of pentacene-based organic thin film transistors (OTFTs) were greatly improved by irradiation of infrared light. The field effect mobility and maximum drain current increase from 0.20±0.01 to 0.57±0.02 cm2/V s and 1.14×10−5 to 4.91×10−5 A, respectively. The (001) peak of the pentacene “thin film” phase increases in intensity by 4.5 times after infrared irradiation at 50 W for 2 h. Two types of crystal orientations, i.e., “crystal I” (2θ = 5.91°) and “crystal II” (2θ = 5.84°), coexist in the pentacene. The improvement of the characteristics of OTFTs is attributed to crystallization and crystal reorientation induced by infrared light.
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85.30.Tv Field effect devices
61.82.Fk Semiconductors
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Efficient multiple triplet quantum well structures in organic light-emitting devices

Tae Jin Park, Woo Sik Jeon, Jin Woo Choi, Ramchandra Pode, Jin Jang, and Jang Hyuk Kwon

Appl. Phys. Lett. 95, 103303 (2009); http://dx.doi.org/10.1063/1.3224190 (3 pages) | Cited 12 times

Online Publication Date: 8 September 2009

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We demonstrate the multiple quantum well (MQW) structures with the charge control layers (CCLs) to produce highly efficient red phosphorescent organic light-emitting devices (OLEDs). Various triplet quantum well devices from a single to five quantum wells are realized using wide band-gap hole and electron transporting layers, narrow band-gap host and dopant materials, and CCLs. Triplet energies in such MQW devices are confined at the emitting layers. The maximum external quantum efficiency of 14.8% with a two quantum well device structure is obtained. The described MQW device concept has been proposed to be very useful to future OLED display and lighting applications.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
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Generation of multicycle terahertz phonon-polariton waves in a planar waveguide by tilted optical pulse fronts

Kung-Hsuan Lin (林宮玄), Christopher A. Werley, and Keith A. Nelson

Appl. Phys. Lett. 95, 103304 (2009); http://dx.doi.org/10.1063/1.3224195 (3 pages) | Cited 9 times

Online Publication Date: 8 September 2009

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We demonstrate generation of frequency-tunable, multicycle terahertz phonon-polariton waves in a LiNbO3 slab waveguide. Because the waveguide modes show considerable phase-velocity dispersion, we are able to enhance frequency-selected narrowband terahertz waves by using femtosecond optical pulses whose intensity fronts are tilted at angles that meet the appropriate noncollinear phase-matching conditions. The pump light is spread across a large area of the crystalline waveguide within which coherent terahertz wave generation occurs, averting material damage, while yielding peak-to-peak terahertz field amplitudes in the waveguide of 50 kV/cm.
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42.79.Gn Optical waveguides and couplers
63.20.-e Phonons in crystal lattices
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
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Investigation of three-terminal organic-based devices with memory effect and negative differential resistance

Li-Zhen Yu and Ching-Ting Lee

Appl. Phys. Lett. 95, 103305 (2009); http://dx.doi.org/10.1063/1.3224201 (3 pages) | Cited 2 times

Online Publication Date: 8 September 2009

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The current-voltage characteristics of the gate-controlled three-terminal organic-based devices with memory effect and negative differential resistances (NDR) were studied. Gold and 9,10-di(2-naphthyl)anthracene (ADN) were used as the metal electrode and active channel layer of the devices, respectively. By using various gate-source voltages, the memory and NDR characteristics of the devices can be modulated. The memory and NDR characteristics of the devices were attributed to the formation of trapping sites in the interface between Au electrode and ADN active layer caused by the defects, when Au metal deposited on the ADN active layer.
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85.30.Tv Field effect devices
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Light emitting ambipolar field-effect transistors of 2,5-bis(4-biphenyl)bithiophene single crystals with anisotropic carrier mobilities

Yan Wang, Ryotaro Kumashiro, Zhaofei Li, Ryo Nouchi, and Katsumi Tanigaki

Appl. Phys. Lett. 95, 103306 (2009); http://dx.doi.org/10.1063/1.3224902 (3 pages) | Cited 3 times

Online Publication Date: 9 September 2009

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Ambipolar carrier injection is observed in organic field-effect transistors (FETs) based on 2,5-bis(4-biphenylyl)bithiophene single crystals. The device shows carrier mobilities of 0.04 and 0.02 cm2 V s for holes and electrons, respectively. Strong edge emission is observed, and the emission zone shifts upon the applied gate voltage. Hysteresis is found mainly in the ambipolar and electron-dominated regions. The electron mobility is significantly more sensitive to the transport direction than the hole mobility, suggesting that tuning the transport direction is very important to realize amplified spontaneous emission in organic FETs.
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85.30.Tv Field effect devices
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
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Tuning of threshold voltage by interfacial carrier doping in organic single crystal ambipolar light-emitting transistors and their bright electroluminescence

Hajime Nakanotani, Masatoshi Saito, Hiroaki Nakamura, and Chihaya Adachi

Appl. Phys. Lett. 95, 103307 (2009); http://dx.doi.org/10.1063/1.3216047 (3 pages) | Cited 14 times

Online Publication Date: 9 September 2009

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Organic light-emitting field-effect transistors, based on a p-bis[(p-styryl)styryl] benzene (P5V4) single crystal, that possess high mobilities of over 0.1 cm2/V s for both electrons and holes were fabricated. For a small charge injection barrier and successive formation of high exciton density in the carrier recombination zone, the hole accumulation threshold voltage was significantly reduced by interfacial hole doping based on electron transfer from P5V4 molecules to a molybdenum oxide layer. The threshold voltage for hole accumulation was drastically decreased from −80±3 to 2±3 V, leading to dual charge injection and accumulation of a very high current density of J>100 A cm−2 with intense edge electroluminescence.
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85.30.Tv Field effect devices
85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
71.35.-y Excitons and related phenomena
72.20.Ee Mobility edges; hopping transport
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A one-step process for localized surface texturing and conductivity enhancement in organic solar cells

A. M. Zaniewski, M. Loster, and A. Zettl

Appl. Phys. Lett. 95, 103308 (2009); http://dx.doi.org/10.1063/1.3223624 (3 pages) | Cited 2 times

Online Publication Date: 9 September 2009

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A process that improves organic solar cell local morphology and geometry is presented. Strong electric field gradients and current densities, generated by voltages locally applied between a conducting atomic force microscope tip and the device surface, induce enhanced conductivity and raise geometrical texturing features in solar cells formed from poly (3-hexylthiophene): [6,6]-phenyl-C61 butyric acid methyl ester blends. These results may open paths to organic solar cell efficiency enhancements through a single step process that simultaneously textures the surface for increased light trapping and enhances charge extraction.
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84.60.Jt Photoelectric conversion
73.61.Ph Polymers; organic compounds
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Toward strain resistant flexible organic thin film transistors

Abdesselam Jedaa and Marcus Halik

Appl. Phys. Lett. 95, 103309 (2009); http://dx.doi.org/10.1063/1.3216587 (3 pages) | Cited 14 times

Online Publication Date: 9 September 2009

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We suggest a molecular design for small molecules as polycrystalline organic semiconductors in flexible organic thin film transistor applications, providing an improved stability during substrate bending. A stable operation of alkyl-substituted sexithiophens was obtained under strain up to ±2.5%. The stability relates to the flexibility of the alkyl chain substitution, scales with their chain length, and outperforms those of pentacene devices. These findings were independent from the underlying dielectric layer.
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85.30.Tv Field effect devices
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Solution processed low-voltage organic transistors and complementary inverters

James M. Ball, Paul H. Wöbkenberg, Florian Colléaux, Martin Heeney, John E. Anthony, Iain McCulloch, Donal D. C. Bradley, and Thomas D. Anthopoulos

Appl. Phys. Lett. 95, 103310 (2009); http://dx.doi.org/10.1063/1.3212736 (3 pages) | Cited 11 times

Online Publication Date: 9 September 2009

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We demonstrate electron and hole-transporting low-voltage transistors based on self-assembling monolayer (SAM) gate dielectrics and solution processed organic small-molecule semiconductors. The studied SAMs include methyl and carboxylic acid terminated molecules. Compared to methyl terminated alkylphosphonic acids, carboxylic acid terminated SAMs are found to exhibit increased surface energy. This enables solution processing of a wide range of small molecules onto the dielectric for the fabrication of low-voltage transistors. Using these transistors we demonstrate complementary inverters operating at voltages <2 V. This work is an important step toward realizing low-voltage organic electronics.
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85.30.Tv Field effect devices
73.40.Ns Metal-nonmetal contacts
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An organic charge trapping memory transistor with bottom source and drain contacts

Maarten Debucquoy, Dieter Bode, Jan Genoe, Gerwin H. Gelinck, and Paul Heremans

Appl. Phys. Lett. 95, 103311 (2009); http://dx.doi.org/10.1063/1.3223588 (3 pages) | Cited 7 times

Online Publication Date: 10 September 2009

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We present an organic charge trapping memory transistor with lithographically defined bottom source and drain contacts. This device can be written and erased at voltages as low as 15 V. More than 500 write and erase cycles and the retention of the trapped charge over more than three months are shown, demonstrating the possibilities of this device as a reprogramable nonvolatile organic memory element.
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84.30.Sk Pulse and digital circuits
85.40.Hp Lithography, masks and pattern transfer
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Efficient sintering of nanocrystalline titanium dioxide films for dye solar cells via raster scanning laser

Girolamo Mincuzzi, Luigi Vesce, Andrea Reale, Aldo Di Carlo, and Thomas M. Brown

Appl. Phys. Lett. 95, 103312 (2009); http://dx.doi.org/10.1063/1.3222915 (3 pages) | Cited 12 times

Online Publication Date: 11 September 2009

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By identifying the right combination of laser parameters, in particular the integrated laser fluence Φ, we fabricated dye solar cells (DSCs) with UV laser-sintered TiO2 films exhibiting a power conversion efficiency η = 5.2%, the highest reported for laser-sintered devices. η is dramatically affected by Φ and a clear trend is reported. Significantly, DSCs fabricated by raster scanning the laser beam to sinter the TiO2 films are made as efficient as those with oven-sintered ones. These results, confirmed on three batches of cells, demonstrate the remarkable potential (noncontact, local, low cost, rapid, selective, and scalable) of scanning laser processing applied to DSC technology.
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84.60.Jt Photoelectric conversion
42.62.-b Laser applications
81.07.Bc Nanocrystalline materials
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