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Applied Physics Letters / Volume 95 / Issue 11 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 95, 111912 (2009); http://dx.doi.org/10.1063/1.3224199 (3 pages)

Blister formation in ion-implanted GaAs: Role of diffusivity

R. R. Collino1, B. B. Dick2, F. Naab2, Y. Q. Wang3, M. D. Thouless1,4, and R. S. Goldman4

1Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109-2125, USA
2Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109-2104, USA
3Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
4Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136, USA

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(Received 15 May 2009; accepted 19 August 2009; published online 17 September 2009)

We have investigated the influence of substrate temperature during implantation, Timplant, on blister formation in GaAs:N layers produced by N ion implantation followed by rapid thermal annealing. Similar depths of popped blisters (craters) and damage profiles were observed for both low and high Timplant. This is in contrast to reports of Timplant-dependent blister formation in higher-diffusivity systems such as GaAs:H and Si:H. The apparent Timplant-insensitivity of blister formation in GaAs:N is likely due to the lower diffusivity of N in GaAs in comparison to that of H in GaAs and Si.

© 2009 American Institute of Physics

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KEYWORDS and PACS

Keywords

annealing, diffusion, gallium arsenide, III-V semiconductors, ion implantation, semiconductor doping, semiconductor thin films

PACS

  • 81.05.Ea

    III-V semiconductors

  • 66.30.H-

    Self-diffusion and ionic conduction in nonmetals

  • 61.72.Cc

    Kinetics of defect formation and annealing

  • 81.40.Gh

    Other heat and thermomechanical treatments

  • 61.72.uj

    III-V and II-VI semiconductors

  • 68.55.ag

    Semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3224199

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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