APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

14 Sep 2009

Volume 95, Issue 11, Articles (11xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 95, 113101 (2009); http://dx.doi.org/10.1063/1.3197646 (3 pages)

Jesse J. Cole, En-Chiang Lin, Chad R. Barry, and Heiko O. Jacobs
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Excitation, detection, and passive cooling of a micromechanical cantilever using near-field of a microwave resonator

L. Hao, J. C. Gallop, and D. Cox

Appl. Phys. Lett. 95, 113501 (2009); http://dx.doi.org/10.1063/1.3224912 (3 pages) | Cited 3 times

Online Publication Date: 16 September 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Micro/nanomechanical resonators are important for nanoscale and quantum physics. We show that a microwave near-field coaxial resonator system allows mechanical cantilever excitation on a scale much shorter than the microwave wavelength. Thermal noise is observed in the unexcited system, enabling room temperature displacement sensitivity of ∼ 70 fm/Hz1/2. The measured force between near-field probe and cantilever varies with separation, in excellent agreement with theory. Uniquely, optical excitation and read-out lasers are also included. We demonstrate passive cantilever mode cooling from 300 to 100 K by frequency detuning the microwave resonator and propose pulsed cooling operation to enable several high-sensitivity applications.
Show PACS
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
85.35.-p Nanoelectronic devices
07.10.Cm Micromechanical devices and systems

Metal-insulator-metal capacitor with high capacitance density and low leakage current using ZrTiO4 film

Yung-Hsien Wu, Bo-Yu Chen, Lun-Lun Chen, Jia-Rong Wu, and Min-Lin Wu

Appl. Phys. Lett. 95, 113502 (2009); http://dx.doi.org/10.1063/1.3222895 (3 pages) | Cited 3 times

Online Publication Date: 16 September 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Thin amorphous and orthorhombic ZrTiO4 film with a high-work-function Ni top electrode has been explored in metal-insulator-metal (MIM) capacitors for analog circuit applications. It has been found that even though the permittivity can be as high as 78.9 for orthorhombic ZrTiO4, the extraordinarily high quadratic voltage coefficient of capacitance (VCC), and leakage current make it ineligible for reliable MIM capacitors. On the other hand, amorphous ZrTiO4 demonstrates a high capacitance density of 29.12 fF/μm2 and a low VCC of 2341 ppm/V2. Because of the amorphous phase and the conduction mechanism of Schottky emission, a low leakage current of 1.3×10−7 A/cm2 at −2 V and a good thermal leakage up to 125 °C has also been obtained. Besides these promising characteristics, amorphous ZrTiO4 holds a great potential for high-performance MIM capacitors not only in its process simplicity but also in the full compatibility with incumbent backend integrated circuit technology.
Show PACS
84.32.Tt Capacitors
77.22.Ch Permittivity (dielectric function)
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Force modulation of tunnel gaps in metal oxide memristive nanoswitches

Feng Miao, J. Joshua Yang, John Paul Strachan, Duncan Stewart, R. Stanley Williams, and Chun Ning Lau

Appl. Phys. Lett. 95, 113503 (2009); http://dx.doi.org/10.1063/1.3227651 (3 pages) | Cited 12 times

Online Publication Date: 16 September 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Electron tunneling plays a key role in computing devices. Tunneling is, however, notoriously difficult to characterize inside real device structures. Using pressure modulated conductance microscopy, we demonstrate in situ angstrom-scale tuning and estimation of tunnel gaps with ∼ 10 nm lateral resolution. By modulating tunnel gaps in Pt/TiOx/Pt memristive oxide nanoswitches, we establish that these devices switch via 2–9 Å modification of the tunnel gap.
Show PACS
85.35.-p Nanoelectronic devices
84.32.Dd Connectors, relays, and switches
73.40.Gk Tunneling

Improvement of SiO2/4H-SiC interface properties by oxidation using hydrogen peroxide

R. Palmieri, C. Radtke, H. Boudinov, and E. F. da Silva, Jr.

Appl. Phys. Lett. 95, 113504 (2009); http://dx.doi.org/10.1063/1.3231923 (3 pages) | Cited 4 times

Online Publication Date: 17 September 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The effect of using H2O2 in the thermal growth process of dielectric films on n-type 4H-SiC substrates has been investigated. In comparison to conventional oxide growth using H2O, we found that the interface trap density is reduced close to the conduction band edge of 4H-SiC. This electrical improvement is correlated with the decrease in SiCxOy compounds at the SiO2/4H-SiC interface region as confirmed by two independent methods. These results point to the use of H2O2 as an alternative passivating agent of SiO2/4H-SiC interface electrically active defects.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.At Surface states, band structure, electron density of states
81.65.Rv Passivation
81.65.Mq Oxidation
68.55.aj Insulators
77.55.-g Dielectric thin films

Field-modulated thermopower in SrTiO3-based field-effect transistors with amorphous 12CaO⋅7Al2O3 glass gate insulator

Hiromichi Ohta, Yumi Masuoka, Ryoji Asahi, Takeharu Kato, Yuichi Ikuhara, Kenji Nomura, and Hideo Hosono

Appl. Phys. Lett. 95, 113505 (2009); http://dx.doi.org/10.1063/1.3231873 (3 pages) | Cited 12 times

Online Publication Date: 18 September 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report transistor characteristics and field-modulated thermopower (S) for single crystal SrTiO3-based field-effect transistors (FETs). We use 150-nm-thick amorphous 12CaO⋅7Al2O3 glass as the gate insulator of the SrTiO3-FET. The resulting SrTiO3-FET exhibits excellent transistor characteristics at room temperature: on-to-off current ratio greater than 106, threshold gate voltage of +1.1 V, subthreshold swing of approximately 0.3 V decade−1, and effective mobility of 2 cm2 V−1 s−1. The field-modulated S-value of the SrTiO3-FET varied from −900 to −580 μV K−1 with electric fields of up to 2 MV cm−1, demonstrating the effectiveness of the FET structure for the exploration of thermoelectric materials.
Show PACS
85.30.Tv Field effect devices
61.43.-j Disordered solids
72.20.Fr Low-field transport and mobility; piezoresistance
72.20.Pa Thermoelectric and thermomagnetic effects
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close