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14 Sep 2009

Volume 95, Issue 11, Articles (11xxxx)

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Appl. Phys. Lett. 95, 113101 (2009); http://dx.doi.org/10.1063/1.3197646 (3 pages)

Jesse J. Cole, En-Chiang Lin, Chad R. Barry, and Heiko O. Jacobs
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High dielectric permittivity of percolative composites based on onion-like carbon

J. Macutkevic, D. Seliuta, G. Valušis, J. Banys, V. Kuznetsov, S. Moseenkov, and O. Shenderova

Appl. Phys. Lett. 95, 112901 (2009); http://dx.doi.org/10.1063/1.3224187 (3 pages) | Cited 5 times

Online Publication Date: 15 September 2009

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The broadband dielectric properties of the onion-like carbon (OLC) and polyurethane based composites of different compositions are presented for the frequency range of 20 Hz–3 GHz and 250–450 K temperatures. It is shown that an abrupt increase in the complex dielectric permittivity at the volume fraction of OLC 10% is associated with the onset of percolation. The revealed critical exponent and percolation point reasonably agree with theoretically predicted values. Composites with 10% of OLC exhibit dielectric permittivity as high as 2000 and conductivity as high as 0.01 S/m at 100 Hz.
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77.22.Ch Permittivity (dielectric function)

Variation of leakage current mechanisms by ion substitution in BiFeO3 thin films

Zhiyong Zhong and Hiroshi Ishiwara

Appl. Phys. Lett. 95, 112902 (2009); http://dx.doi.org/10.1063/1.3231073 (3 pages) | Cited 26 times

Online Publication Date: 17 September 2009

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Pure BiFeO3 (BFO) and 3, 5, and 7 at. % Mn-substituted BFO (BFMO) films were formed by chemical solution deposition with a crystallization temperature of ∼ 550 °C. The leakage current density in a BFO film was found to be subject to space-charge-limited conduction, instead of Poole–Frenkel emission. Moreover, the serious transient effect from the traps was observed, indicating the density of trap states is relatively high in the BFO film. On the contrary, the leakage currents in BFMO films were found to be subject to trap-free Ohmic conduction.
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75.80.+q Magnetomechanical effects, magnetostriction
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
77.80.-e Ferroelectricity and antiferroelectricity
77.55.-g Dielectric thin films
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
72.20.Ht High-field and nonlinear effects
73.50.Fq High-field and nonlinear effects
64.70.dg Crystallization of specific substances
73.61.Ng Insulators
75.50.Dd Nonmetallic ferromagnetic materials

Enhancing the magnetoelectric response of Metglas/polyvinylidene fluoride laminates by exploiting the flux concentration effect

Z. Fang, S. G. Lu, F. Li, S. Datta, Q. M. Zhang, and M. El Tahchi

Appl. Phys. Lett. 95, 112903 (2009); http://dx.doi.org/10.1063/1.3231614 (3 pages) | Cited 18 times

Online Publication Date: 17 September 2009

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Magnetic flux concentration effect of Metglas as a function of its sheet aspect ratio was investigated for Metglas/polyvinylidene fluoride laminates. Taking advantage of this effect, the magnetoelectric voltage coefficient of 21.46 V/cm∙Oe for a laminate with 1 mm wide and 30 mm long Metglas sheet (25 μm thick) is achieved, which is much higher than those reported earlier in similar laminates without making use of the flux concentration effect. The results demonstrate an effective means to significantly enhance the sensitivity of magnetostrictive/piezoelectric composite laminates as weak magnetic field sensors.
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75.80.+q Magnetomechanical effects, magnetostriction
77.84.Jd Polymers; organic compounds
81.05.Kf Glasses (including metallic glasses)
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials

Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films

Sheng-Yu Wang, Dai-Ying Lee, Tseung-Yuen Tseng, and Chih-Yang Lin

Appl. Phys. Lett. 95, 112904 (2009); http://dx.doi.org/10.1063/1.3231872 (3 pages) | Cited 23 times

Online Publication Date: 17 September 2009

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In this study, we propose a simple method to produce the various interface thicknesses within Ti/ZrO2 by changing the thickness of the Ti top electrode. As the Ti thickness increases, the induced interface thickness also increases to degrade the dielectric strength of the ZrO2, further lowering the forming voltage. However, when the interface layer is thick enough, it will trap sufficient charges to build up an opposite electric field to increase the forming voltage. The induced interface thickness is found to obviously affect the bias polarity of the resistive switching behavior and the device reliability. A fluctuant ON process is also demonstrated to be attributed to the competition between the formation and rupture of the conducting filaments.
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84.30.Sk Pulse and digital circuits
81.15.Cd Deposition by sputtering

Thermal nitridation passivation dependent band offset and electrical properties of AlOxNy/GaAs gate stacks

G. He, L. D. Zhang, and M. Liu

Appl. Phys. Lett. 95, 112905 (2009); http://dx.doi.org/10.1063/1.3229922 (3 pages) | Cited 8 times

Online Publication Date: 18 September 2009

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Fermi level pinning attributed to oxides at the GaAs/high-k interface is a major obstacle to develop GaAs-based metal-oxide-semiconductor devices with high performance. In this letter, thermal nitridation treatment of GaAs surface prior to the high-k deposition is proposed to solve the issue of interface pinning. Results have confirmed that nitridation passivation effectively suppresses the oxides formation and leads to a shift in the Fermi level toward the conduction band minimum on the GaAs surface, which increases the conduction band offset at the GaAs/AlOxNy interface, followed by a saturated accumulation capacitance with reduced gate leakage current.
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73.20.At Surface states, band structure, electron density of states
81.65.Rv Passivation
68.47.Fg Semiconductor surfaces
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation
72.80.Ey III-V and II-VI semiconductors
77.55.-g Dielectric thin films
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