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14 Sep 2009

Volume 95, Issue 11, Articles (11xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 95, 113101 (2009); http://dx.doi.org/10.1063/1.3197646 (3 pages)

Jesse J. Cole, En-Chiang Lin, Chad R. Barry, and Heiko O. Jacobs
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Continuous nanoparticle generation and assembly by atmospheric pressure arc discharge

Jesse J. Cole, En-Chiang Lin, Chad R. Barry, and Heiko O. Jacobs

Appl. Phys. Lett. 95, 113101 (2009); http://dx.doi.org/10.1063/1.3197646 (3 pages) | Cited 6 times

Online Publication Date: 15 September 2009

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This letter describes a nanoparticle generation and deposition system which combines aspects of high temperature plasmas with room temperature aerosols. The process works at atmospheric pressure and produces nanoparticles of Au or ZnO through cathode erosion inside a dc arc discharge plasma. The particles are positively charged by the arc and form a room temperature aerosol. From the aerosol, nanoparticles assemble on conductive sample surfaces through openings in patterned resist with resolution enhanced by electrodynamic nanolenses. We report that continued operation of the system results in funneled deposition of nanoparticles into well positioned three dimensional nanostructures.
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61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
81.07.Bc Nanocrystalline materials
52.80.Mg Arcs; sparks; lightning; atmospheric electricity
82.70.Rr Aerosols and foams
52.77.-j Plasma applications
81.16.Dn Self-assembly

High performance binderless TiO2 nanowire arrays electrode for lithium-ion battery

Yueming Li, Xiaojun Lv, and Jinghong Li

Appl. Phys. Lett. 95, 113102 (2009); http://dx.doi.org/10.1063/1.3224888 (3 pages) | Cited 18 times

Online Publication Date: 15 September 2009

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Binderless lithium ion battery electrode fabricated by anodizing Ti foil, in which TiO2 nanowire serves as active materials and unreacted Ti foil as the current collector, exhibited high electrochemical performance.
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82.47.Aa Lithium-ion batteries
82.45.Fk Electrodes
81.16.-c Methods of micro- and nanofabrication and processing
81.07.-b Nanoscale materials and structures: fabrication and characterization
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)

Optical determination of Young’s modulus of InAs nanowires

Monica Lexholm, Ivan Karlsson, Fredrik Boxberg, and Dan Hessman

Appl. Phys. Lett. 95, 113103 (2009); http://dx.doi.org/10.1063/1.3225150 (3 pages) | Cited 8 times

Online Publication Date: 15 September 2009

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We present a study of Young’s modulus of epitaxially grown InAs nanowires with diameters from 40 to 95 nm. The dynamic behavior of the nanowires is investigated using optical stroboscopic imaging. The Young’s modulus, evaluated using the eigenfrequencies of the fundamental and the first excited modes in air, decreases for smaller diameters. To avoid the influence of the electric field on the resonance frequency, we use the free ring-down response to a voltage step rather than driving with a harmonic voltage.
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81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.de Elastic moduli
68.60.Bs Mechanical and acoustical properties
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
81.07.Vb Quantum wires
78.67.Lt Quantum wires

Parallel trapping of multiwalled carbon nanotubes with optoelectronic tweezers

Peter J. Pauzauskie, Arash Jamshidi, Justin K. Valley, Joe H. Satcher, Jr., and Ming C. Wu

Appl. Phys. Lett. 95, 113104 (2009); http://dx.doi.org/10.1063/1.3212725 (3 pages) | Cited 6 times

Online Publication Date: 15 September 2009

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Here we report the use of optoelectronic tweezers and dynamic virtual electrodes to address multiwalled carbon nanotubes (MWCNTs) with trap stiffness values of approximately 50 fN/μm. Both high-speed translation (>200 μm/s) of individual-MWCNTs and two-dimensional trapping of MWCNT ensembles are achieved using 100,000 times less optical power density than single beam laser tweezers. Modulating the virtual electrode’s intensity enables tuning of the MWCNT ensemble’s number density by an order of magnitude on the time scale of seconds promising a broad range of applications in MWCNT science and technology.
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42.50.Wk Mechanical effects of light on material media, microstructures and particles
06.60.Sx Positioning and alignment; manipulating, remote handling
42.62.-b Laser applications
81.16.Ta Atom manipulation
81.07.De Nanotubes

Electrical tuning of exciton g factors in quantum dot molecules: Effect of hole localization

Weidong Sheng

Appl. Phys. Lett. 95, 113105 (2009); http://dx.doi.org/10.1063/1.3227653 (3 pages) | Cited 3 times

Online Publication Date: 15 September 2009

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We present a theoretical study of electron and hole g factors in stacked self-assembled InAs/GaAs quantum dots. The exciton ground and first excited states in the quantum dot molecules are found to exhibit opposite resonances in their g factors in the presence of a small vertical electric field, which is very different from the monotonic behavior of their counterparts in single quantum dots. While the g factor of the electronic ground state is seen to have little variation as the applied electric field increases, the relocalization of the hole states in coupled quantum dots is found to account for the resonant behavior of the exciton g factors. Our theoretical result agrees well with a recent experiment.
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81.07.Ta Quantum dots
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
71.35.-y Excitons and related phenomena
73.21.La Quantum dots

Guided growth of in-plane silicon nanowires

Linwei Yu, Maher Oudwan, Oumkelthoum Moustapha, Franck Fortuna, and Pere Roca i Cabarrocas

Appl. Phys. Lett. 95, 113106 (2009); http://dx.doi.org/10.1063/1.3227667 (3 pages) | Cited 4 times

Online Publication Date: 15 September 2009

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We report on a guided growth of silicon nanowires (SiNWs) based on an in-plane solid-liquid-solid mechanism, which provides a general strategy to deploy SiNWs precisely into desired circuits. During a reacting-gas-free annealing process, the SiNWs are activated to grow and be guided into predefined patterns by effective controlling the movement of the catalyst drops. We demonstrate three different approaches to achieve a guided growth of SiNWs, which are as follows: (1) by an a-Si:H channel, (2) by a step edge, and (3) by an a-Si:H edge. These results provide a design principle for future SiNWs-based nanodevices.
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81.16.-c Methods of micro- and nanofabrication and processing
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.05.Cy Elemental semiconductors
81.40.Gh Other heat and thermomechanical treatments

Fabrication of single electron transistors using transfer-printed aligned single walled carbon nanotubes arrays

Hiroshi Tabata, Maki Shimizu, and Koji Ishibashi

Appl. Phys. Lett. 95, 113107 (2009); http://dx.doi.org/10.1063/1.3227835 (3 pages) | Cited 9 times

Online Publication Date: 15 September 2009

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A technique has been developed to transfer the aligned single-walled carbon nanotubes (SWCNTs) grown on a single-crystal quarz substrate to a SiO2/Si substrate. Aligned single electron transistors (SETs) have been fabricated with the transferred SWCNTs, and the low-temperature transport measurements have been carried out at 1.5 K. Several SETs fabricated in this approach exhibited regular Coulomb oscillations and closed Coulomb diamonds, which indicate the single quantum dot behavior. This suggests that the mechanical transfer technique does not produce serious damage to the SETs and would be useful for future integrated SET devices and circuits.
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81.07.De Nanotubes
81.16.Rf Micro- and nanoscale pattern formation
85.35.Gv Single electron devices
73.63.Fg Nanotubes

Toward full carbon interconnects: High conductivity of individual carbon nanotube to carbon nanotube regrowth junctions

S. Tuukkanen, S. Streiff, P. Chenevier, M. Pinault, H.-J. Jeong, S. Enouz-Vedrenne, C. S. Cojocaru, D. Pribat, and J.-P. Bourgoin

Appl. Phys. Lett. 95, 113108 (2009); http://dx.doi.org/10.1063/1.3216839 (3 pages) | Cited 8 times

Online Publication Date: 15 September 2009

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A versatile chemical vapor deposition (CVD) based method for the fabrication and electrical measurement of individual carbon nanotube junctions was developed. ferritin or Fe particles were grafted on multiwalled carbon nanotubes (MWNTs) and used as catalysts for the subsequent growth of secondary MWNT by CVD. Junctions were then individually connected. The conductivities of the MWNTs and of the junction were measured. Statistical data show that the conductance of the MWNT-MWNT junction is similar to that of MWNT. This result paves the way for the use of carbon nanotubes as electrical interconnects in electronic applications.
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73.63.Fg Nanotubes
73.40.Ns Metal-nonmetal contacts
81.07.De Nanotubes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Mesoscopic phenomena in Au nanocrystal floating gate memory structure

K. C. Chan, P. F. Lee, and J. Y. Dai

Appl. Phys. Lett. 95, 113109 (2009); http://dx.doi.org/10.1063/1.3229885 (3 pages) | Cited 2 times

Online Publication Date: 15 September 2009

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A resonant tunneling process is demonstrated in the HfAlO/Au nanocrystals/HfAlO trilayer nonvolatile memory (NVM) structure on Si, where the electrons tunnel back and forth to the Au nanocrystals due to the various mesoscopic behaviors. The electron tunneling behavior in this trilayer structure exhibits dissimilar resemblance to those in double-barrier tunnel junctions taking into account of the correlation of Coulomb blockade effect. The observed specific tunneling process is beneficial in studying the interplays of various mesoscopic physics and application of single electron devices into NVM.
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84.30.Sk Pulse and digital circuits
85.35.Gv Single electron devices
73.40.Gk Tunneling
73.23.Hk Coulomb blockade; single-electron tunneling

Low density 1.55 μm InAs/InGaAsP/InP (100) quantum dots enabled by an ultrathin GaAs interlayer

P. J. van Veldhoven, N. Chauvin, A. Fiore, and R. Nötzel

Appl. Phys. Lett. 95, 113110 (2009); http://dx.doi.org/10.1063/1.3230496 (3 pages) | Cited 2 times

Online Publication Date: 15 September 2009

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The authors report the formation of low density InAs/InGaAsP/InP (100) quantum dots (QDs) by metalorganic vapor phase epitaxy enabled by an ultrathin GaAs interlayer. For small InAs amount and low group-V flow rate, the QD density is reduced to below 10 QDs/μm2. Increasing the group-V flow rate slightly increases the QD density and shifts the QD emission wavelength into the 1.55 μm telecommunication region. Without GaAs interlayer, the QD density is drastically increased. This is attributed to the suppression of As/P exchange during QD growth by the GaAs interlayer avoiding the formation of excess InAs.
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78.67.Hc Quantum dots
81.07.Ta Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
68.55.ag Semiconductors

Controlled growth of InGaAs/InGaAsP quantum dots on InP substrates employing diblock copolymer lithography

J. H. Park, J. Kirch, L. J. Mawst, C.-C. Liu, P. F. Nealey, and T. F. Kuech

Appl. Phys. Lett. 95, 113111 (2009); http://dx.doi.org/10.1063/1.3224916 (3 pages) | Cited 4 times

Online Publication Date: 16 September 2009

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Selective metalorganic chemical vapor deposition growth with diblock copolymer nanopatterning is utilized to produce InGaAsP(Q1.15 μm)/In0.53Ga0.47As/InGaAsP(Q1.15 μm) and InP/In0.53Ga0.47As/InP quantum dots (QDs) on InP substrates. The QD patterning is prepared by dense nanoscale diblock copolymer lithography followed by pattern-transfer onto a dielectric template mask and reactive ion etching is utilized to form nanosized openings exposing the underlying InGaAsP layer. By varying the In0.53Ga0.47As layer thickness within the QDs, the emission wavelength can be selected within the 1.4–1.6 μm region. Strongest photoluminescence (PL) intensity is observed from QDs employing InP rather than InGaAsP barriers, demonstrating room temperature PL near 1.6 μm.
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81.16.Rf Micro- and nanoscale pattern formation
81.07.Ta Quantum dots
81.16.Nd Micro- and nanolithography
81.65.Cf Surface cleaning, etching, patterning
78.55.Cr III-V semiconductors
78.67.Hc Quantum dots

Electron beam induced deposition of residual hydrocarbons in the presence of a multiwall carbon nanotube

K. Rykaczewski, M. R. Henry, and A. G. Fedorov

Appl. Phys. Lett. 95, 113112 (2009); http://dx.doi.org/10.1063/1.3225553 (3 pages)

Online Publication Date: 16 September 2009

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Amorphous carbon deposited via electron beam induced deposition (EBID) is frequently used to make a low-temperature Ohmic contact with low electrical resistance and improved mechanical characteristics of the multiwall nanotube (MWNT) substrate or MWNT-MWNT interface. However, influence of the MWNT on the EBID process has not been quantified. In this work, we experimentally and theoretically investigate the growth dynamics of EBID of residual hydrocarbons in presence of a MWNT. We demonstrate that the properties of MWNT do not impact amorphous carbon deposition process.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.40.Ns Metal-nonmetal contacts
73.40.Cg Contact resistance, contact potential
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Lanthanide-based graded barrier structure for enhanced nanocrystal memory properties

M. Y. Chan, T. K. Chan, T. Osipowicz, L. Chan, and P. S. Lee

Appl. Phys. Lett. 95, 113113 (2009); http://dx.doi.org/10.1063/1.3224188 (3 pages) | Cited 3 times

Online Publication Date: 16 September 2009

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A memory structure comprising Ge nanocrystals and lanthanide-based charge trapping dielectric stack was fabricated to realize a self-aligned graded barrier structure. By exploiting efficient charge trapping of the nanocrystals embedded in the heterogeneous high-k dielectric, strong memory effect was manifested by a large counterclockwise capacitance-voltage hysteresis of 2.7 V under a low voltage operation of ±4 V. The high-k barrier with graded composition provides a favorable confinement barrier for improved hole retention with simultaneous enlargement of the memory window.
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84.30.Sk Pulse and digital circuits

Graphene on gold: Electron density of states studies by scanning tunneling spectroscopy

Z. Klusek, P. Dabrowski, P. Kowalczyk, W. Kozlowski, W. Olejniczak, P. Blake, M. Szybowicz, and T. Runka

Appl. Phys. Lett. 95, 113114 (2009); http://dx.doi.org/10.1063/1.3231440 (3 pages) | Cited 15 times

Online Publication Date: 17 September 2009

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Graphene devices require electric contacts with metals, particularly with gold. Scanning tunneling spectroscopy studies of electron local density of states performed on mono-, bi-, and trigraphene layer deposited on metallic Au/Cr/SiO2/Si substrate shows that gold substrate causes the Fermi level shift downwards which means that holes are donated by metal substrate to graphene which becomes p-type doped. These experimental results are in good accordance with recently published density function theory calculations.
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71.20.Tx Fullerenes and related materials; intercalation compounds
81.05.ub Fullerenes and related materials
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
81.15.Cd Deposition by sputtering
73.20.At Surface states, band structure, electron density of states
61.72.up Other materials
73.40.Gk Tunneling

Fabrication of nanometer-spaced superconducting Pb electrodes

Kang Luo and Zhen Yao

Appl. Phys. Lett. 95, 113115 (2009); http://dx.doi.org/10.1063/1.3224877 (3 pages) | Cited 1 time

Online Publication Date: 18 September 2009

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We report the fabrication of superconducting Pb electrodes with nanometer-sized separation by using the electromigration technique. Below the superconducting transition temperature, the electrodes show current-voltage characteristics consistent with the tunneling between two superconducting electrodes, which can be well understood within conventional theory of superconductivity. The electrodes can be reversibly switched between the normal and superconducting states by the application of an external magnetic field. These electrodes are suited for electron-transport studies of chemically synthesized nanostructures and the utility is demonstrated by making single-molecule transistors incorporating individual Co-porphyrin molecules.
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81.16.-c Methods of micro- and nanofabrication and processing
74.50.+r Tunneling phenomena; Josephson effects
74.78.Na Mesoscopic and nanoscale systems
66.30.Qa Electromigration

Detection of defective DNA in carbon nanotubes by combined molecular dynamics/tight-binding technique

Yang Xu, Xiaobing Mi, and N. R. Aluru

Appl. Phys. Lett. 95, 113116 (2009); http://dx.doi.org/10.1063/1.3231922 (3 pages) | Cited 3 times

Online Publication Date: 18 September 2009

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A tight-binding method combined with molecular dynamics (MD) is used to investigate the electrostatic signals generated by DNA segments inside short semiconducting single-wall carbon nanotubes (CNTs). The trajectories of DNA, ions, and waters, obtained from MD, are used in the tight-binding method to compute the electrostatic potential. The electrostatic signals indicate that when the DNA translocates through the CNT, it is possible to identify the total number of base pairs and the relative positions of the defective base pairs in DNA chains. Our calculations suggest that it is possible to differentiate Dickerson and hairpin DNA structures by comparing the signals.
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87.14.gk DNA
87.15.ap Molecular dynamics simulation
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