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14 Sep 2009

Volume 95, Issue 11, Articles (11xxxx)

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Appl. Phys. Lett. 95, 113101 (2009); http://dx.doi.org/10.1063/1.3197646 (3 pages)

Jesse J. Cole, En-Chiang Lin, Chad R. Barry, and Heiko O. Jacobs
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Experimental measurement of the total energy losses in a low pressure inductively coupled argon plasma

Young-Kwang Lee, Min-Hyong Lee, and Chin-Wook Chung

Appl. Phys. Lett. 95, 111501 (2009); http://dx.doi.org/10.1063/1.3097020 (3 pages) | Cited 2 times

Online Publication Date: 14 September 2009

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Total energy losses per electron-ion pair lost (εT) were measured experimentally in a low pressure inductively coupled argon plasma. A floating probe working at very low bias voltage ( ∼ 1 V) was used to obtain the electron temperatures and plasma densities at the plasma-sheath boundary. εT was found from a power balance equation between the absorbed power and dissipated power by electrons and ions. At 10 mTorr, the measurement shows that the measured εT ( ∼ 100 V) gradually decreased with absorbed power, and this indicates that the ionization efficiency enhances by multistep ionizations. These εT are consistent with the theoretical results.
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52.70.Ds Electric and magnetic measurements
52.25.-b Plasma properties
52.40.Kh Plasma sheaths

Role of low-frequency power in dual-frequency capacitive discharges

S. K. Ahn and H. Y. Chang

Appl. Phys. Lett. 95, 111502 (2009); http://dx.doi.org/10.1063/1.3223593 (3 pages) | Cited 9 times

Online Publication Date: 15 September 2009

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Changes in plasma characteristics depending on low-frequency power in dual-frequency capacitive discharges were found from the measurement of electrical characteristics and electron energy probability functions. It is shown that as the low-frequency (2 MHz) power increases for the fixed high-frequency (27.12 MHz) current, the ion bombardment energy, and the ion flux onto the electrode increase simultaneously. It is also shown that the coupling between the low-frequency power and the ion flux originates from change in electron heating mechanisms when varying the low-frequency power. Depending on the discharge pressure, changes in the collisional electron heating in the bulk plasma and participation of the secondary electron emission in the ionization process are observed.
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52.80.Pi High-frequency and RF discharges
52.50.Qt Plasma heating by radio-frequency fields; ICR, ICP, helicons
52.20.Fs Electron collisions
52.70.Ds Electric and magnetic measurements
52.25.Tx Emission, absorption, and scattering of particles

Nonthermal and screening effects on the inelastic Compton scattering in Lorentzian plasmas

Hwa-Min Kim and Young-Dae Jung

Appl. Phys. Lett. 95, 111503 (2009); http://dx.doi.org/10.1063/1.3229941 (3 pages) | Cited 1 time

Online Publication Date: 15 September 2009

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The nonthermal and screening effects on the inelastic Compton scattering process are investigated in Lorentzian plasmas. The screened atomic wave functions and energies for the hydrogenic ion in Lorentzian plasmas are obtained by the Rayleigh–Ritz variational method. The transition matrix element for the inelastic Compton scattering process in Lorentzian plasmas is also obtained as a function of the spectral index and plasma parameters by the two photon-perturbation Hamiltonian. It is found that the nonthermal character of the Lorentzian plasma suppresses the inelastic Compton scattering cross section. In addition, the nonthermal effects are found to be significant for 2<κ<5, where κ is the spectral index of the Lorentzian plasma.
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52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.25.Tx Emission, absorption, and scattering of particles
52.20.Hv Atomic, molecular, ion, and heavy-particle collisions
32.80.Wr Other multiphoton processes

Contaminant gas removal using thin-film Ti electrode microdischarges

Scott A. Wright and Yogesh B. Gianchandani

Appl. Phys. Lett. 95, 111504 (2009); http://dx.doi.org/10.1063/1.3226679 (3 pages) | Cited 2 times

Online Publication Date: 16 September 2009

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We report a method for the selective chemisorption of oxygen and nitrogen in sealed cavities utilizing microdischarges between thin-film Ti electrodes. The method is used to remove contaminating air from both inert and organic gas environments, reducing the nitrogen and oxygen concentrations by factors of 50 and 16, respectively. A microchip-based optical emission spectroscopic sensor is used to monitor the purification. The purification improves the ability of the optical emission sensor to detect carbon by a factor of 8. The method has been tested at temperatures between 23 and 200 °C.
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82.33.Xj Plasma reactions (including flowing afterglow and electric discharges)
81.20.Ym Purification
68.43.Mn Adsorption kinetics
52.77.-j Plasma applications
52.80.-s Electric discharges
82.80.Dx Analytical methods involving electronic spectroscopy

Self-organized vertically aligned single-crystal silicon nanostructures with controlled shape and aspect ratio by reactive plasma etching

S. Xu, I. Levchenko, S. Y. Huang, and K. Ostrikov

Appl. Phys. Lett. 95, 111505 (2009); http://dx.doi.org/10.1063/1.3232210 (3 pages) | Cited 35 times

Online Publication Date: 18 September 2009

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The formation of vertically aligned single-crystalline silicon nanostructures via “self-organized” maskless etching in Ar+H2 plasmas is studied. The shape and aspect ratio can be effectively controlled by the reactive plasma composition. In the optimum parameter space, single-crystalline pyramid-like nanostructures are produced; otherwise, nanocones and nanodots are formed. This generic nanostructure formation approach does not involve any external material deposition. It is based on a concurrent sputtering, etching, hydrogen termination, and atom/radical redeposition and can be applied to other nanomaterials.
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81.16.-c Methods of micro- and nanofabrication and processing
81.07.-b Nanoscale materials and structures: fabrication and characterization
52.77.Bn Etching and cleaning
81.65.Cf Surface cleaning, etching, patterning
81.15.Cd Deposition by sputtering
61.46.-w Structure of nanoscale materials
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