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Appl. Phys. Lett. 95, 123107 (2009); doi:10.1063/1.3236778 (3 pages)

Structure of YSi2 nanowires from scanning tunneling spectroscopy and first principles

V. Iancu1, P. R. C. Kent2, C. G. Zeng1, and H. H. Weitering1,3

1Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37931, USA
2Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
3Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA

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(Received 13 May 2009; accepted 3 September 2009; published online 23 September 2009)

Exceptionally long and uniform YSi2 nanowires are formed via self-assembly on Si(001). The in-plane width of the thinnest wires is known to be quantized in odd multiples of the silicon lattice constant. Here, we identify a class of nanowires that violates the “odd multiple” rule. The structure of the thinnest wire in this category is determined by comparing scanning tunneling spectroscopy measurements with the calculated surface density of states of candidate models by means of the Pendry R-factor analysis. The relative stability of the odd and even wire systems is analyzed via first-principles calculations.

© 2009 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 61.46.Km

    Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)

  • 73.21.Hb

    Quantum wires

  • 81.16.Dn

    Self-assembly

  • 81.16.Ta

    Atom manipulation

  • 68.37.Ef

    Scanning tunneling microscopy (including chemistry induced with STM)

  • 71.15.Mb

    Density functional theory, local density approximation, gradient and other corrections

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

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