The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors

Lee, Jaeseob; Park, Jin-Seong; Pyo, Young Shin; Lee, Dong Bum; Kim, Eun Hyun; Stryakhilev, Denis; Kim, Tae Woong; Jin, Dong Un; Mo, Yeon-Gon

doi:doi:10.1063/1.3232179

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We investigated the threshold voltage (V_th) instability for various gate dielectrics (SiN_x and SiO_x) in amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs). The a-IGZO TFTs with SiN_x 150 °C exhibited reasonable electrical performance (field-effect mobility of 8.1 cm²/V s and I_on/off ratio of >10⁸) but showed huge V_th shift under positive gate bias. The TFTs with SiO_x dielectrics exhibit smaller V_th instability than those of SiN_x dielectrics. This behavior can be explained by using simple charge trapping into the gate insulators and the difference of V_th instability on various dielectrics may be originated from the hydrogen contents, providing high density of charge traps in gate dielectrics.

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KEYWORDS and PACS

Keywords

amorphous semiconductors, gallium compounds, indium compounds, silicon compounds, thin film transistors, wide band gap semiconductors, zinc compounds

PACS

85.30.Tv

Field effect devices

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.3232179

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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