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21 Sep 2009

Volume 95, Issue 12, Articles (12xxxx)

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Appl. Phys. Lett. 95, 121104 (2009); http://dx.doi.org/10.1063/1.3231448 (3 pages)

E. H. Khoo, I. Ahmed, and E. P. Li
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Hydrothermal synthesis of vertically aligned lead zirconate titanate nanowire arrays

Yirong Lin, Yingtao Liu, and Henry A. Sodano

Appl. Phys. Lett. 95, 122901 (2009); http://dx.doi.org/10.1063/1.3237170 (3 pages) | Cited 9 times

Online Publication Date: 23 September 2009

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A hydrothermal method is employed for the growth of single crystal vertically aligned lead zirconate titanate (PZT) nanowire arrays. The resulting PZT nanowires were grown from a TiO2 film and are shown to be single crystal with growth in the [110] axis. PZT has a coupling coefficient up to two orders of magnitude higher than ZnO, which should provide many opportunities for the creation of active nanodevices and systems.
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81.16.-c Methods of micro- and nanofabrication and processing
81.10.Dn Growth from solutions
81.07.-b Nanoscale materials and structures: fabrication and characterization
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.-j Piezoelectricity and electromechanical effects

Thermally induced permittivity enhancement in La-doped ZrO2 grown by atomic layer deposition on Ge(100)

L. Lamagna, C. Wiemer, S. Baldovino, A. Molle, M. Perego, S. Schamm-Chardon, P. E. Coulon, and M. Fanciulli

Appl. Phys. Lett. 95, 122902 (2009); http://dx.doi.org/10.1063/1.3227669 (3 pages) | Cited 12 times

Online Publication Date: 23 September 2009

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La-doped ZrO2 thin films grown by O3-based atomic layer deposition directly on Ge(100) exhibit a dielectric constant of 29. Upon annealing in N2 at 400 °C, a high κ value >40 is extracted for film thickness below 15 nm. Compositional depth profiling allows to correlate this observation with a remarkable Ge interdiffusion from the substrate which is consistent with the stabilization of the tetragonal ZrO2 phase. Ge interaction with the oxide stack and the formation of a germanate-like interfacial region, which acts as an electrical passivation for the Ge surface, are also investigated.
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77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.65.Rv Passivation
81.40.Gh Other heat and thermomechanical treatments
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation

Maxwell–Wagner instability in bilayer dielectric stacks

K. B. Jinesh, Y. Lamy, J. H. Klootwijk, and W. F. A. Besling

Appl. Phys. Lett. 95, 122903 (2009); http://dx.doi.org/10.1063/1.3236532 (3 pages) | Cited 8 times

Online Publication Date: 23 September 2009

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The Maxwell–Wagner effect, the enhanced charge migration to the interface of a stack of two dielectrics with different conductances, is shown to cause asymmetric leakage current and electrical breakdown behavior for different electrode polarities. For this purpose, metal-insulator-silicon capacitors were fabricated consisting of bilayered silicon dioxide–lanthanum zirconate dielectric stacks. Maxwell–Wagner instability and Debye polarization can be distinguished upon comparing electron injection from both sides of the stack. The Maxwell–Wagner charges have relaxation times that are nearly five orders of magnitude larger than the Debye polarization, suggesting the long-lasting influence of these trapped charges in nanolaminated dielectric systems.
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77.22.Ej Polarization and depolarization
77.22.Jp Dielectric breakdown and space-charge effects
84.32.Tt Capacitors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Tuning the remanent polarization of epitaxial ferroelectric thin films with strain

J. X. Zhang, D. G. Schlom, L. Q. Chen, and C. B. Eom

Appl. Phys. Lett. 95, 122904 (2009); http://dx.doi.org/10.1063/1.3231444 (3 pages) | Cited 13 times

Online Publication Date: 25 September 2009

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The effect of biaxial strain on the remanent polarization of epitaxial thin films of various ferroelectric materials is studied using phenomenological Landau–Devonshire theory. It is shown that the strain dependences of the remanent polarizations are strongly dependent on crystal symmetries and film orientations. For (001)p-oriented ferroelectric films with (distorted) rhombohedral symmetry, strain-induced polarization rotation leads to stronger strain dependences than in ferroelectric films with tetragonal or orthorhombic symmetries. For (111)p-oriented ferroelectric films with rhombohedral symmetry, however, the remanent polarization is less sensitive to the biaxial strain.
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77.22.Ej Polarization and depolarization
77.55.-g Dielectric thin films
61.50.Ah Theory of crystal structure, crystal symmetry; calculations and modeling
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