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21 Sep 2009

Volume 95, Issue 12, Articles (12xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 95, 121104 (2009); http://dx.doi.org/10.1063/1.3231448 (3 pages)

E. H. Khoo, I. Ahmed, and E. P. Li
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〈100〉 n-type metal-oxide-semiconductor field-effect transistor-embedded microcantilever sensor for observing the kinetics of chemical molecules interaction

Jian Wang, Wengang Wu, Ying Huang, and Yilong Hao

Appl. Phys. Lett. 95, 124101 (2009); http://dx.doi.org/10.1063/1.3231074 (3 pages)

Online Publication Date: 22 September 2009

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This letter reports a silicon microcantilever sensor with an embedded n-type metal-oxide-semiconductor field-effect transistor (nMOSFET) for observing the kinetics of chemical molecules interaction based on surface stress sensing principle. In the sensors, the silicon cantilevers with gold coating and the channels of the embedded-nMOSFETs are configured along 〈100〉 crystal orientation. The kinetics of and the surface stress from chemical interactions between acetone, ethanol, nitroethane, and thiols molecules are observed, respectively, which follow the Langmuir model. The output signals of the nMOSFET-embedded cantilever sensors induced by various targets are different, which implies that the devices may allow for gaining insights into the kinetics of intermolecular interactions.
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85.30.Tv Field effect devices

Observation of pressure stimulated voltages in rocks using an electric potential sensor

A. Aydin, R. J. Prance, H. Prance, and C. J. Harland

Appl. Phys. Lett. 95, 124102 (2009); http://dx.doi.org/10.1063/1.3236774 (3 pages) | Cited 8 times

Online Publication Date: 24 September 2009

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Recent interest in the electrical activity in rock and the use of electric field transients as candidates for earthquake precursors has led to studies of pressure stimulated currents in laboratory samples. In this paper, an electric field sensor is used to measure directly the voltages associated with these currents. Stress was applied as uniaxial compression to marble and granite at an approximately constant rate. In contrast with the small pressure stimulated currents previously measured, large voltage signals are reported. Polarity reversal of the signal was observed immediately before fracture for the marble, in agreement with previous pressure stimulated current studies.
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93.85.Jk Magnetic and electrical methods
91.30.Px Earthquakes
91.60.Pn Magnetic and electrical properties

Mesoporous silica films with varying porous volume fraction: Direct correlation between ortho-positronium annihilation decay and escape yield into vacuum

L. Liszkay, C. Corbel, L. Raboin, J.-P. Boilot, P. Perez, A. Brunet-Bruneau, P. Crivelli, U. Gendotti, A. Rubbia, T. Ohdaira, and R. Suzuki

Appl. Phys. Lett. 95, 124103 (2009); http://dx.doi.org/10.1063/1.3234381 (3 pages) | Cited 6 times

Online Publication Date: 24 September 2009

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The behavior of ortho-positronium (o-Ps) in mesoporous silica films implanted with low–energy positrons has been studied as a function of the film porous volume fraction. A lifetime spectrometer allowed determination of o-Ps annihilation decay both inside and outside of the film. A kinetic model is introduced that permits the determination of the yield and rate of escape of o-Ps into vacuum as well as the annihilation decay rate of the trapped o-Ps in the film. It is shown that these undergo a sudden change at a threshold porous volume fraction, above which the o-Ps escape rate to vacuum varies linearly with volume fraction.
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78.70.Bj Positron annihilation
78.66.Nk Insulators
61.43.Gt Powders, porous materials

Tunable magnetoelastic phononic crystals

J.-F. Robillard, O. Bou Matar, J. O. Vasseur, P. A. Deymier, M. Stippinger, A.-C. Hladky-Hennion, Y. Pennec, and B. Djafari-Rouhani

Appl. Phys. Lett. 95, 124104 (2009); http://dx.doi.org/10.1063/1.3236537 (3 pages) | Cited 16 times

Online Publication Date: 24 September 2009

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The feasibility of tuning the band structure of phononic crystals is demonstrated by employing magnetostrictive materials and applying an external magnetic field. Band structures are calculated with a plane wave expansion method that accounts for coupling between the elastic behavior and the magnetic field through the development of elastic, piezomagnetic, and magnetic permeability effective tensors. We show the contactless tunability of the absolute band gaps of a two-dimensional phononic crystal composed of an epoxy matrix and Terfenol-D inclusions. The tunable phononic crystal behaves like a transmission switch for elastic waves when the magnitude of an applied magnetic field crosses a threshold.
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75.80.+q Magnetomechanical effects, magnetostriction
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
62.30.+d Mechanical and elastic waves; vibrations
71.20.-b Electron density of states and band structure of crystalline solids
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)

The influence of Saffman lift force on nanoparticle concentration distribution near a wall

Xu Zheng and Zhanhua Silber-Li

Appl. Phys. Lett. 95, 124105 (2009); http://dx.doi.org/10.1063/1.3237159 (3 pages) | Cited 2 times

Online Publication Date: 25 September 2009

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The lift force on a spherical nanoparticle near a wall in micro/nanofluidics has not received sufficient attention so far. In this letter the concentration of ϕ200 nm particles is measured at 0.25–2.0 μm to a wall in a microchannel with pressure-driven de-ionized water flow (pressure gradient 0–2000 kPa/m). The measured data show the influence of the lift force on the nanoparticle concentration distribution. By introducing the Saffman lift force into the Nernst–Planck equation near a wall, we find that the lift force is dominant at the range of 2<z+<6 (z+ = z/2r, r is the particle radius, z is the distance from the wall).
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47.61.Fg Flows in micro-electromechanical systems (MEMS) and nano-electromechanical systems (NEMS)
47.60.Dx Flows in ducts and channels
07.10.Cm Micromechanical devices and systems
47.85.Np Fluidics
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