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Applied Physics Letters / Volume 95 / Issue 13 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 95, 131903 (2009); http://dx.doi.org/10.1063/1.3238311 (3 pages)

Suppression of nonradiative processes in long-lived polar GaN/AlN quantum dots

J. Renard, P. K. Kandaswamy, E. Monroy, and B. Gayral

CEA-CNRS Group “Nanophysique et Semiconducteurs,” CEA-Grenoble, INAC/SP2M 17 rue des Martyrs, 38054 Grenoble, France

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(Received 12 August 2009; accepted 5 September 2009; published online 30 September 2009)

We present a temperature-dependent time-resolved photoluminescence study of the nonradiative processes in polar GaN/AlN quantum dots and quantum wells. The photoluminescence decay times of quantum wells drop above 50 K due to the presence of nonradiative recombination centers. In contrast, the three-dimensional carrier confinement in quantum dots efficiently suppresses nonradiative processes up to room temperature, even for radiative decay times reaching the microsecond range.

© 2009 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, dislocations, gallium compounds, III-V semiconductors, semiconductor quantum dots, semiconductor quantum wells, wide band gap semiconductors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3238311

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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$abstract.society.value is a Member of CrossRef American Institute of Physics

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