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Appl. Phys. Lett. 95, 133508 (2009); http://dx.doi.org/10.1063/1.3242381 (3 pages)

Transparent flexible resistive random access memory fabricated at room temperature

Jung Won Seo1, Jae-Woo Park1, Keong Su Lim1, Sang Jung Kang1, Yun Ho Hong1, Ji Hwan Yang1, Liang Fang1, Gun Yong Sung2, and Han-Ki Kim3

1Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 335 Gwahak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea
2Biosensor Research Team, IT Convergence Technology Research Lab., Electronics and Telecommunications Research Institute (ETRI), 138 Gajeongno, Yuseong-gu, Daejeon 305-700, Republic of Korea
3Department of Display Materials Engineering, Kyung Hee University, 1 Seochoen-dong, Yongin-si, Gyeonggi-do 446-701, Republic of Korea

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(Received 2 September 2009; accepted 13 September 2009; published online 2 October 2009)

We report the room temperature fabrication of highly transparent and flexible resistive random access memory devices based on an ITO (indium tin oxide)/ZnO (zinc oxide)/ITO/Ag/ITO capacitor structure on a polyethersulfone flexible substrate. The ITO/Ag/ITO multilayered bottom electrode provides superior flexibility as well as high transparency compared to devices with ITO single bottom electrode during repetitive bending tests. The devices exhibit a high transmittance and the excellent reliability of data retention. Moreover, they show consistent memory performance, even under thermal stress. The results of this study provide a breakthrough solution for the era of transparent and flexible electronic systems in the near future.

© 2009 American Institute of Physics

ERRATUM

  1. Erratum: “Transparent flexible resistive random access memory fabricated at room temperature” [Appl. Phys. Lett. 95, 133508 (2009)]
    Jung Won Seo et al.
    Appl. Phys. Lett. 96, 149904 (2010)APPLAB000096000014149904000001

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0003-6951 (print)  
1077-3118 (online)

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