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28 Sep 2009

Volume 95, Issue 13, Articles (13xxxx)

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Appl. Phys. Lett. 95, 131107 (2009); http://dx.doi.org/10.1063/1.3236752 (3 pages)

Marcus Eichfelder, Wolfgang-Michael Schulz, Matthias Reischle, Michael Wiesner, Robert Roßbach, Michael Jetter, and Peter Michler
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Y–O hybridization in the ferroelectric transition of YMnO3

Jinyoung Kim, Kyung Chul Cho, Yang Mo Koo, Kun Pyo Hong, and Namsoo Shin

Appl. Phys. Lett. 95, 132901 (2009); http://dx.doi.org/10.1063/1.3233943 (3 pages) | Cited 9 times

Online Publication Date: 28 September 2009

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The electron density distribution of paraelectric and ferroelectric YMnO3 are investigated by analyzing high temperature synchrotron radiation powder diffraction data using the maximum entropy method (MEM) and MEM-based pattern fitting combined with the Rietveld method. The results show that chemical bonding by orbital hybridization is established between the Y and in-plane O ions along the polar c-axis below the ferroelectric transition temperature. We suggest that the hybridization observed in the ferroelectric phase is the driving force for ferroelectricity in YMnO3.
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77.80.B- Phase transitions and Curie point
75.80.+q Magnetomechanical effects, magnetostriction
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
75.50.Ee Antiferromagnetics
77.22.Ej Polarization and depolarization

Shear effects in lateral piezoresponse force microscopy at 180° ferroelectric domain walls

J. Guyonnet, H. Béa, F. Guy, S. Gariglio, S. Fusil, K. Bouzehouane, J.-M. Triscone, and P. Paruch

Appl. Phys. Lett. 95, 132902 (2009); http://dx.doi.org/10.1063/1.3226654 (3 pages) | Cited 14 times

Online Publication Date: 30 September 2009

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In studies using piezoresponse force microscopy, we observe a nonzero lateral piezoresponse at 180° domain walls in out-of-plane polarized, c-axis-oriented tetragonal ferroelectric Pb(Zr0.2Ti0.8)O3 epitaxial thin films. We attribute these observations to a shear strain effect linked to the sign change of the d33 piezoelectric coefficient through the domain wall, in agreement with theoretical predictions. We show that in monoclinically distorted tetragonal BiFeO3 films, this effect is superimposed on the lateral piezoresponse due to actual in-plane polarization and has to be taken into account in order to correctly interpret the ferroelectric domain configuration.
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77.80.Dj Domain structure; hysteresis
77.65.-j Piezoelectricity and electromechanical effects
68.60.Bs Mechanical and acoustical properties

Band alignment and electron traps in Y2O3 layers on (100)Si

W. C. Wang, M. Badylevich, V. V. Afanas’ev, A. Stesmans, C. Adelmann, S. Van Elshocht, J. A. Kittl, M. Lukosius, Ch. Walczyk, and Ch. Wenger

Appl. Phys. Lett. 95, 132903 (2009); http://dx.doi.org/10.1063/1.3236536 (3 pages) | Cited 4 times

Online Publication Date: 30 September 2009

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Y2O3 films deposited by atomic vapor deposition on (100)Si with a 2 or 5 nm thick pregrown thermal SiO2 are investigated as possible charge trapping layers. Analysis of these structures using spectroscopic ellipsometry, photoconductivity, and internal photoemission reveals that Y2O3 has a 5.6 eV wide optical bandgap and a 2.0 eV conduction band offset with silicon. Photo(dis)charging experiments show that the optical energy depth of most of the traps exceeds 1.5 eV with respect to the Y2O3 conduction band, explaining the observed charge retention time of ∼ 108 s at room temperature, even in the absence of a blocking insulator.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
68.55.at Other materials
72.40.+w Photoconduction and photovoltaic effects
73.61.Ng Insulators
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.66.Nk Insulators
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
79.60.Jv Interfaces; heterostructures; nanostructures

Improved dielectric strength of barium titanate-polyvinylidene fluoride nanocomposite

Xiaoliang Dou, Xiaolin Liu, Yong Zhang, Huan Feng, Jian-Feng Chen, and Song Du

Appl. Phys. Lett. 95, 132904 (2009); http://dx.doi.org/10.1063/1.3242004 (3 pages) | Cited 9 times

Online Publication Date: 2 October 2009

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Barium titanate-polyvinydene fluoride nanocomposites with improved dielectric strength were prepared, in which on the surface of the barium titanate nanoparticle was coated. The results showed that the dielectric breakdown strength of the nanocomposites increase significantly up to 250 kV/mm and then decrease. Microstructural investigations revealed that the coated barium titanate nanoparticles were well-dispersed in polyvinydene fluoride. Fourier transform infrared spectroscopy confirmed that there is a large coverage of cross-linking in both interfaces of the barium titanate–titanate and the titanate–polyvinydene fluoride, which can connect the composites to form an organically integrated body, which result in the increase of the dielectric strength of the nanocomposites.
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77.22.Jp Dielectric breakdown and space-charge effects
81.16.-c Methods of micro- and nanofabrication and processing
77.84.Lf Composite materials
81.07.Pr Organic-inorganic hybrid nanostructures
78.30.-j Infrared and Raman spectra

Ionized-oxygen vacancies related dielectric relaxation in heteroepitaxial K0.5Na0.5NbO3/La0.67Sr0.33MnO3 structure at elevated temperature

J. Miao, X. G. Xu, Y. Jiang, L. X. Cao, and B. R. Zhao

Appl. Phys. Lett. 95, 132905 (2009); http://dx.doi.org/10.1063/1.3242009 (3 pages) | Cited 9 times

Online Publication Date: 2 October 2009

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Ferroelectric K0.5Na0.5NbO3 (KNN) thin film was epitaxially grown on La0.67Sr0.33MnO3 (LSMO) buffered LaAlO3 substrate by pulse laser deposition. The crystallographic structure of KNN/LSMO was confirmed by x-ray diffraction. Interestingly, a dielectric relaxor feature was found in the temperature range 200–350 °C. The activation energies for relaxation and conduction of the films were found to be 1.87 and 0.63–0.71 eV, respectively. The mechanism for dielectric relaxation in KNN/LSMO structure was discussed under a thermally activated process. The remnant polarization and coercive field of the films were 21.3 μC/cm2 and 91 kV/cm, respectively.
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77.22.Gm Dielectric loss and relaxation
77.80.-e Ferroelectricity and antiferroelectricity
77.55.-g Dielectric thin films
81.15.Fg Pulsed laser ablation deposition
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