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28 Sep 2009

Volume 95, Issue 13, Articles (13xxxx)

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Appl. Phys. Lett. 95, 131107 (2009); http://dx.doi.org/10.1063/1.3236752 (3 pages)

Marcus Eichfelder, Wolfgang-Michael Schulz, Matthias Reischle, Michael Wiesner, Robert Roßbach, Michael Jetter, and Peter Michler
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Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress

Sangwon Lee, Kichan Jeon, Jun-Hyun Park, Sungchul Kim, Dongsik Kong, Dong Myong Kim, Dae Hwan Kim, Sangwook Kim, Sunil Kim, Jihyun Hur, Jae Chul Park, Ihun Song, Chang Jung Kim, Youngsoo Park, and U-In Jung

Appl. Phys. Lett. 95, 132101 (2009); http://dx.doi.org/10.1063/1.3237169 (3 pages) | Cited 11 times

Online Publication Date: 28 September 2009

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Bipolar ac stress-induced instability of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors is comparatively investigated with that under a positive dc gate bias stress. While the positive dc gate bias stress-induced threshold voltage shift (ΔVT) is caused by the charge trapping into the interface/gate dielectric as reported in previous works, the dominant mechanism of the ac stress-induced ΔVT is observed to be due to the increase in the acceptorlike deep states of the density of states (DOS) in the a-IGZO active layer. Furthermore, it is found that the variation of deep states in the DOS makes a parallel shift in the IDS-VGS curve with an insignificant change in the subthreshold slope, as well as the deformation of the CG-VG curves.
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85.30.Tv Field effect devices
81.15.Cd Deposition by sputtering
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Ga II-VI semiconductors
71.55.Gs II-VI semiconductors
81.05.Dz II-VI semiconductors

ZnO(0001) surfaces probed by scanning tunneling spectroscopy: Evidence for an inhomogeneous electronic structure

J. Dumont, B. Hackens, S. Faniel, P.-O. Mouthuy, R. Sporken, and S. Melinte

Appl. Phys. Lett. 95, 132102 (2009); http://dx.doi.org/10.1063/1.3238288 (3 pages) | Cited 4 times

Online Publication Date: 28 September 2009

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The stability of the polar Zn-terminated ZnO surface is probed by low-temperature scanning tunneling microscopy and scanning tunneling spectroscopy (STS). Surface states in the bandgap of ZnO are evidenced by STS and their presence is correlated with the local surface corrugation. Very defective surface regions are characterized by a bulk electronic structure showing a wide bandgap while nanometer-scale defect free regions exhibit a narrower bandgap and surface states. We also image atomically resolved (math×math)R30° reconstructions on the defect-free areas.
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73.20.At Surface states, band structure, electron density of states
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
71.20.Nr Semiconductor compounds

Orientation-controlled Si thin films on insulating substrates by Al-induced crystallization combined with interfacial-oxide layer modulation

Masashi Kurosawa, Naoyuki Kawabata, Taizoh Sadoh, and Masanobu Miyao

Appl. Phys. Lett. 95, 132103 (2009); http://dx.doi.org/10.1063/1.3241076 (3 pages) | Cited 18 times

Online Publication Date: 29 September 2009

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Orientation-controlled Si films on transparent insulating substrates are strongly desired to achieve high-efficiency thin-film solar cells. We have developed the interfacial-oxide layer modulated Al-induced low temperature (<450 °C) crystallization technique, which enables dominantly (001) or (111)-oriented Si films with large grains (20–100 μm). These results are qualitatively explained on the basis of a model considering the phase transition of the interfacial Al oxide layers. This process provides the orientation-controlled Si templates on insulating substrates, which enables successive high quality epitaxial growth necessary for advanced Si thin-film solar cells.
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68.55.ag Semiconductors
64.70.dg Crystallization of specific substances
84.60.Jt Photoelectric conversion

Surface structure and chemical states of a-plane and c-plane InN films

Takahiro Nagata, Gregor Koblmüller, Oliver Bierwagen, Chad S. Gallinat, and James S. Speck

Appl. Phys. Lett. 95, 132104 (2009); http://dx.doi.org/10.1063/1.3238286 (3 pages) | Cited 13 times

Online Publication Date: 29 September 2009

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The surface electron accumulation layer, surface structure, and surface chemical states of a-plane (nonpolar) and c-plane (polar) InN epitaxial films were investigated. Electrical measurements indicated electron accumulation layers on the surface of both the InN films. Angle-resolved x-ray photoelectron spectroscopy (XPS) measurements indicated a strong band bending at both surfaces, thus confirming the surface electron accumulation. Further XPS analysis of the near-surface chemical states indicated an In adlayer at the surface of c-plane InN and an oxygen adsorbed layer on the a-plane InN. These results suggest different ad-layers to cause the surface electron accumulation on c-plane and a-plane InN.
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68.35.bg Semiconductors
68.55.-a Thin film structure and morphology
79.60.Dp Adsorbed layers and thin films
73.20.At Surface states, band structure, electron density of states
68.43.Fg Adsorbate structure (binding sites, geometry)

Large Rashba splitting in highly asymmetric CdTe/PbTe/PbSrTe quantum well structures

Shuqiang Jin, Huizhen Wu, and Tianning Xu

Appl. Phys. Lett. 95, 132105 (2009); http://dx.doi.org/10.1063/1.3236531 (3 pages) | Cited 3 times

Online Publication Date: 29 September 2009

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The realization of PbTe/CdTe quantum structures and determination of highly asymmetric energy band make it feasible to construct asymmetric CdTe/PbTe/Pb1−xSrxTe quantum wells (QWs) for the probe of spintronics. Contrary to HgTe/CdTe QWs, the spin-orbit interaction in the CdTe/PbTe/Pb1−xSrxTe QWs is purely Rashba and anisotropic. Rashba splittings in the asymmetric QWs with different growth orientations and electron densities are explored. For the QWs grown along [110] direction the Rashba splitting for the oblique valley is particularly large (13.7 meV). The strong Rashba effect presented in the highly asymmetric QWs provides a potential candidate for spintronic devices.
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73.21.Fg Quantum wells
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
72.25.Dc Spin polarized transport in semiconductors
71.20.Nr Semiconductor compounds

Current-controlled magnetoresistance in silicon in non-Ohmic transport regimes

Michael P. Delmo, Shinya Kasai, Kensuke Kobayashi, and Teruo Ono

Appl. Phys. Lett. 95, 132106 (2009); http://dx.doi.org/10.1063/1.3238361 (3 pages) | Cited 8 times

Online Publication Date: 30 September 2009

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We show that the large positive magnetoresistance in nonmagnetic silicon devices can be controlled by a current applied in the non-Ohmic transport regime. The experimental results indicate that the carrier transport in this regime is dominated by the space-charge effect, where the magnetoresistance effect is greatly enhanced. We propose a device concept based on the space-charge-induced magnetoresistance effect in silicon that is controlled by both the current and the magnetic field, which looks similar to the characteristics of the field-effect transistors.
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85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
72.20.Fr Low-field transport and mobility; piezoresistance
85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
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