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28 Sep 2009

Volume 95, Issue 13, Articles (13xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 95, 131107 (2009); http://dx.doi.org/10.1063/1.3236752 (3 pages)

Marcus Eichfelder, Wolfgang-Michael Schulz, Matthias Reischle, Michael Wiesner, Robert Roßbach, Michael Jetter, and Peter Michler
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Erratum: “Effect of gate orientation on dc characteristics of Si-doped, nonpolar AlGaN/GaN metal-oxide semiconductor high electron mobility transistors” [Appl. Phys. Lett. 95, 082110 (2009)]

C. Y. Chang, Yu-Lin Wang, B. P. Gila, A. P. Gerger, S. J. Pearton, C. F. Lo, F. Ren, Q. Sun, Yu Zhang, and J. Han

Appl. Phys. Lett. 95, 139901 (2009); http://dx.doi.org/10.1063/1.3238266 (1 page)

Online Publication Date: 28 September 2009

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Abstract Unavailable
Show PACS
71.20.Tx Fullerenes and related materials; intercalation compounds
61.72.up Other materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.43.Mn Adsorption kinetics
71.15.Dx Computational methodology (Brillouin zone sampling, iterative diagonalization, pseudopotential construction)
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
73.61.Wp Fullerenes and related materials
72.80.Rj Fullerenes and related materials
99.10.Cd Errata
FREE

Erratum: “High efficiency GaN-based light-emitting diodes fabricated on dielectric-mask-embedded structures” [Appl. Phys. Lett. 95, 011108 (2009)]

J. W. Lee, C. Sone, Y. Park, S.-N. Lee, J.-H. Ryou, R. D. Dupuis, C.-H. Hong, and H. Kim

Appl. Phys. Lett. 95, 139902 (2009); http://dx.doi.org/10.1063/1.3223585 (1 page)

Online Publication Date: 1 October 2009

Full Text: Read Online (HTML) | Download PDF

Abstract Unavailable
Show PACS
71.20.Tx Fullerenes and related materials; intercalation compounds
61.72.up Other materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.43.Mn Adsorption kinetics
71.15.Dx Computational methodology (Brillouin zone sampling, iterative diagonalization, pseudopotential construction)
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
73.61.Wp Fullerenes and related materials
72.80.Rj Fullerenes and related materials
99.10.Cd Errata
FREE

Erratum: “High dielectric permittivity in semiconducting Pr0.6Ca0.4MnO3 filled polyvinylidene fluoride nanocomposites with low percolation threshold” [Appl. Phys. Lett. 95, 062904 (2009)]

K. Devi Chandrasekhar, A. Venimadhav, and A. K. Das

Appl. Phys. Lett. 95, 139903 (2009); http://dx.doi.org/10.1063/1.3233928 (1 page)

Online Publication Date: 1 October 2009

Full Text: Read Online (HTML) | Download PDF

Abstract Unavailable
Show PACS
71.20.Tx Fullerenes and related materials; intercalation compounds
61.72.up Other materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.43.Mn Adsorption kinetics
71.15.Dx Computational methodology (Brillouin zone sampling, iterative diagonalization, pseudopotential construction)
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
73.61.Wp Fullerenes and related materials
72.80.Rj Fullerenes and related materials
99.10.Cd Errata
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